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FR2751778B1 - Memoire accessible en lecture seulement - Google Patents

Memoire accessible en lecture seulement

Info

Publication number
FR2751778B1
FR2751778B1 FR9609492A FR9609492A FR2751778B1 FR 2751778 B1 FR2751778 B1 FR 2751778B1 FR 9609492 A FR9609492 A FR 9609492A FR 9609492 A FR9609492 A FR 9609492A FR 2751778 B1 FR2751778 B1 FR 2751778B1
Authority
FR
France
Prior art keywords
read
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9609492A
Other languages
English (en)
Other versions
FR2751778A1 (fr
Inventor
Thierry Bion
Richard Ferrant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics SA
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA, SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics SA
Priority to FR9609492A priority Critical patent/FR2751778B1/fr
Priority to US08/898,499 priority patent/US5862091A/en
Publication of FR2751778A1 publication Critical patent/FR2751778A1/fr
Application granted granted Critical
Publication of FR2751778B1 publication Critical patent/FR2751778B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
FR9609492A 1996-07-23 1996-07-23 Memoire accessible en lecture seulement Expired - Fee Related FR2751778B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9609492A FR2751778B1 (fr) 1996-07-23 1996-07-23 Memoire accessible en lecture seulement
US08/898,499 US5862091A (en) 1996-07-23 1997-07-22 Memory accessible in read mode only

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9609492A FR2751778B1 (fr) 1996-07-23 1996-07-23 Memoire accessible en lecture seulement

Publications (2)

Publication Number Publication Date
FR2751778A1 FR2751778A1 (fr) 1998-01-30
FR2751778B1 true FR2751778B1 (fr) 1998-11-06

Family

ID=9494568

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9609492A Expired - Fee Related FR2751778B1 (fr) 1996-07-23 1996-07-23 Memoire accessible en lecture seulement

Country Status (2)

Country Link
US (1) US5862091A (fr)
FR (1) FR2751778B1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11231954A (ja) * 1998-02-16 1999-08-27 Mitsubishi Electric Corp 内部電源電圧発生回路
US6107873A (en) * 1998-03-30 2000-08-22 National Semiconductor Corporation Low noise common-emitter preamplifier for magneto-resistive heads
WO2000051184A1 (fr) * 1999-02-23 2000-08-31 Hitachi, Ltd Dispositif a circuit integre en semiconducteur
JP2002133863A (ja) * 2000-10-19 2002-05-10 Mitsubishi Electric Corp 電位検出回路
US6819165B2 (en) * 2002-05-30 2004-11-16 Analog Devices, Inc. Voltage regulator with dynamically boosted bias current
US6897715B2 (en) * 2002-05-30 2005-05-24 Analog Devices, Inc. Multimode voltage regulator
FR2844090A1 (fr) * 2002-08-27 2004-03-05 St Microelectronics Sa Cellule memoire pour registre non volatile a lecture rapide
US9135962B2 (en) * 2007-06-15 2015-09-15 Micron Technology, Inc. Comparators for delta-sigma modulators
US8570784B2 (en) * 2011-07-28 2013-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Differential ROM

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404654A (en) * 1980-01-29 1983-09-13 Sharp Kabushiki Kaisha Semiconductor device system
JPS5940397A (ja) * 1982-08-31 1984-03-06 Toshiba Corp デ−タ読み出し回路
JPS609157A (ja) * 1983-06-29 1985-01-18 Fujitsu Ltd 読出し専用半導体記憶装置
JPS60177499A (ja) * 1984-02-22 1985-09-11 Nippon Texas Instr Kk シリアルロム装置
US4648074A (en) * 1984-06-29 1987-03-03 Rca Corporation Reference circuit with semiconductor memory array
US4644197A (en) * 1985-01-28 1987-02-17 Motorola, Inc. Reduced power sense amplifier
JPH03266462A (ja) * 1990-03-16 1991-11-27 Toshiba Micro Electron Kk 半導体記憶装置
US5060190A (en) * 1990-09-18 1991-10-22 Industrial Technology Research Institute Read only memory with write operation using mask
JPH04195900A (ja) * 1990-11-27 1992-07-15 Nec Ic Microcomput Syst Ltd カレントミラー型センスアンプ
US5515327A (en) * 1993-12-21 1996-05-07 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device having a small number of internal boosting circuits

Also Published As

Publication number Publication date
FR2751778A1 (fr) 1998-01-30
US5862091A (en) 1999-01-19

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070330