FR2751778B1 - Memoire accessible en lecture seulement - Google Patents
Memoire accessible en lecture seulementInfo
- Publication number
- FR2751778B1 FR2751778B1 FR9609492A FR9609492A FR2751778B1 FR 2751778 B1 FR2751778 B1 FR 2751778B1 FR 9609492 A FR9609492 A FR 9609492A FR 9609492 A FR9609492 A FR 9609492A FR 2751778 B1 FR2751778 B1 FR 2751778B1
- Authority
- FR
- France
- Prior art keywords
- read
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
- G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9609492A FR2751778B1 (fr) | 1996-07-23 | 1996-07-23 | Memoire accessible en lecture seulement |
US08/898,499 US5862091A (en) | 1996-07-23 | 1997-07-22 | Memory accessible in read mode only |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9609492A FR2751778B1 (fr) | 1996-07-23 | 1996-07-23 | Memoire accessible en lecture seulement |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2751778A1 FR2751778A1 (fr) | 1998-01-30 |
FR2751778B1 true FR2751778B1 (fr) | 1998-11-06 |
Family
ID=9494568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9609492A Expired - Fee Related FR2751778B1 (fr) | 1996-07-23 | 1996-07-23 | Memoire accessible en lecture seulement |
Country Status (2)
Country | Link |
---|---|
US (1) | US5862091A (fr) |
FR (1) | FR2751778B1 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11231954A (ja) * | 1998-02-16 | 1999-08-27 | Mitsubishi Electric Corp | 内部電源電圧発生回路 |
US6107873A (en) * | 1998-03-30 | 2000-08-22 | National Semiconductor Corporation | Low noise common-emitter preamplifier for magneto-resistive heads |
WO2000051184A1 (fr) * | 1999-02-23 | 2000-08-31 | Hitachi, Ltd | Dispositif a circuit integre en semiconducteur |
JP2002133863A (ja) * | 2000-10-19 | 2002-05-10 | Mitsubishi Electric Corp | 電位検出回路 |
US6819165B2 (en) * | 2002-05-30 | 2004-11-16 | Analog Devices, Inc. | Voltage regulator with dynamically boosted bias current |
US6897715B2 (en) * | 2002-05-30 | 2005-05-24 | Analog Devices, Inc. | Multimode voltage regulator |
FR2844090A1 (fr) * | 2002-08-27 | 2004-03-05 | St Microelectronics Sa | Cellule memoire pour registre non volatile a lecture rapide |
US9135962B2 (en) * | 2007-06-15 | 2015-09-15 | Micron Technology, Inc. | Comparators for delta-sigma modulators |
US8570784B2 (en) * | 2011-07-28 | 2013-10-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Differential ROM |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4404654A (en) * | 1980-01-29 | 1983-09-13 | Sharp Kabushiki Kaisha | Semiconductor device system |
JPS5940397A (ja) * | 1982-08-31 | 1984-03-06 | Toshiba Corp | デ−タ読み出し回路 |
JPS609157A (ja) * | 1983-06-29 | 1985-01-18 | Fujitsu Ltd | 読出し専用半導体記憶装置 |
JPS60177499A (ja) * | 1984-02-22 | 1985-09-11 | Nippon Texas Instr Kk | シリアルロム装置 |
US4648074A (en) * | 1984-06-29 | 1987-03-03 | Rca Corporation | Reference circuit with semiconductor memory array |
US4644197A (en) * | 1985-01-28 | 1987-02-17 | Motorola, Inc. | Reduced power sense amplifier |
JPH03266462A (ja) * | 1990-03-16 | 1991-11-27 | Toshiba Micro Electron Kk | 半導体記憶装置 |
US5060190A (en) * | 1990-09-18 | 1991-10-22 | Industrial Technology Research Institute | Read only memory with write operation using mask |
JPH04195900A (ja) * | 1990-11-27 | 1992-07-15 | Nec Ic Microcomput Syst Ltd | カレントミラー型センスアンプ |
US5515327A (en) * | 1993-12-21 | 1996-05-07 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device having a small number of internal boosting circuits |
-
1996
- 1996-07-23 FR FR9609492A patent/FR2751778B1/fr not_active Expired - Fee Related
-
1997
- 1997-07-22 US US08/898,499 patent/US5862091A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2751778A1 (fr) | 1998-01-30 |
US5862091A (en) | 1999-01-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20070330 |