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FR2729678B1 - Monocristaux en solution solide de ktiopo4 et procede pour les preparer - Google Patents

Monocristaux en solution solide de ktiopo4 et procede pour les preparer

Info

Publication number
FR2729678B1
FR2729678B1 FR9600597A FR9600597A FR2729678B1 FR 2729678 B1 FR2729678 B1 FR 2729678B1 FR 9600597 A FR9600597 A FR 9600597A FR 9600597 A FR9600597 A FR 9600597A FR 2729678 B1 FR2729678 B1 FR 2729678B1
Authority
FR
France
Prior art keywords
ktiopo4
monocrystals
preparing
solid
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9600597A
Other languages
English (en)
Other versions
FR2729678A1 (fr
Inventor
Koji Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of FR2729678A1 publication Critical patent/FR2729678A1/fr
Application granted granted Critical
Publication of FR2729678B1 publication Critical patent/FR2729678B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3551—Crystals
    • G02F1/3553—Crystals having the formula MTiOYO4, where M=K, Rb, TI, NH4 or Cs and Y=P or As, e.g. KTP

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR9600597A 1995-01-19 1996-01-19 Monocristaux en solution solide de ktiopo4 et procede pour les preparer Expired - Fee Related FR2729678B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP631095 1995-01-19
JP7331588A JPH08253393A (ja) 1995-01-19 1995-12-20 Ｋｔｐ固溶体単結晶及びその製造方法

Publications (2)

Publication Number Publication Date
FR2729678A1 FR2729678A1 (fr) 1996-07-26
FR2729678B1 true FR2729678B1 (fr) 1998-05-22

Family

ID=26340412

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9600597A Expired - Fee Related FR2729678B1 (fr) 1995-01-19 1996-01-19 Monocristaux en solution solide de ktiopo4 et procede pour les preparer

Country Status (3)

Country Link
US (1) US5788764A (fr)
JP (1) JPH08253393A (fr)
FR (1) FR2729678B1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1172029C (zh) * 1999-05-22 2004-10-20 科学技术振兴事业团 高质量单晶的制成方法及其装置
GB0017516D0 (en) * 2000-07-17 2000-08-30 Isis Innovation Nonlinear optical materials
KR100753322B1 (ko) * 2004-06-11 2007-08-29 니폰덴신뎅와 가부시키가이샤 결정 제조 방법 및 장치
US7317859B2 (en) * 2004-08-25 2008-01-08 Advanced Photonics Crystals Periodically poled optical crystals and process for the production thereof
WO2008114855A1 (fr) * 2007-03-16 2008-09-25 Ube Industries, Ltd. Procédé de fabrication d'un monocristal d'oxyde de zinc
US8389099B1 (en) 2007-06-01 2013-03-05 Rubicon Technology, Inc. Asymmetrical wafer configurations and method for creating the same
CN101319385B (zh) * 2008-04-30 2011-09-28 烁光特晶科技有限公司 一种适于制作ppktp器件的ktp晶体生长方法
CN102465332A (zh) * 2010-11-18 2012-05-23 中国科学院福建物质结构研究所 一种熔盐提拉法生长ktp优质单晶的方法
CN103060888B (zh) * 2013-01-08 2015-04-15 重庆大学 一种晶体作三维运动的溶液中生长晶体的方法
JP6136735B2 (ja) * 2013-08-08 2017-05-31 株式会社リコー １３族窒化物結晶の製造方法及び製造装置
TWM484459U (zh) * 2014-04-18 2014-08-21 Globalwafers Co Ltd 晶體生長爐的攪拌裝置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0365597A (ja) * 1989-07-31 1991-03-20 Toshiba Corp 非線形光学結晶の製造方法
US5879590A (en) * 1990-07-13 1999-03-09 North American Philips Corporation Low conductivity, doped KTIOPO4 and devices based thereon
US5146533A (en) * 1991-08-01 1992-09-08 E. I. Du Pont De Nemours And Company Ion exchanged crystalline waveguides and processes for their preparation
JP3115406B2 (ja) * 1992-03-27 2000-12-04 ホーヤ株式会社 Ｋｔｐ単結晶の製造方法
JPH0664995A (ja) * 1992-05-15 1994-03-08 Sony Corp ＫＴｉＯＰＯ４ 単結晶及びその製造方法
US5334365A (en) * 1992-05-26 1994-08-02 E. I. Du Pont De Nemours And Company Single cesium titanyl arsenate-type crystals, and their preparation
JPH06345594A (ja) * 1993-06-14 1994-12-20 Hoya Corp 光導波路の製造方法

Also Published As

Publication number Publication date
JPH08253393A (ja) 1996-10-01
US5788764A (en) 1998-08-04
FR2729678A1 (fr) 1996-07-26

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Legal Events

Date Code Title Description
ST Notification of lapse