FR2719416B1 - Process for passivation of the sides of a thin-film semiconductor component. - Google Patents
Process for passivation of the sides of a thin-film semiconductor component.Info
- Publication number
- FR2719416B1 FR2719416B1 FR9405240A FR9405240A FR2719416B1 FR 2719416 B1 FR2719416 B1 FR 2719416B1 FR 9405240 A FR9405240 A FR 9405240A FR 9405240 A FR9405240 A FR 9405240A FR 2719416 B1 FR2719416 B1 FR 2719416B1
- Authority
- FR
- France
- Prior art keywords
- passivation
- thin
- sides
- semiconductor component
- film semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9405240A FR2719416B1 (en) | 1994-04-29 | 1994-04-29 | Process for passivation of the sides of a thin-film semiconductor component. |
PCT/FR1995/000572 WO1995030241A1 (en) | 1994-04-29 | 1995-05-02 | Method for passivating the sides of a thin film semiconductor component |
EP95919467A EP0757845A1 (en) | 1994-04-29 | 1995-05-02 | Method for passivating the sides of a thin film semiconductor component |
JP7528040A JPH09512667A (en) | 1994-04-29 | 1995-05-02 | Method of passivating side surface of thin film semiconductor component |
KR1019960706045A KR970703043A (en) | 1994-04-29 | 1996-10-28 | Method for passivating the sides of a thin film semiconductor component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9405240A FR2719416B1 (en) | 1994-04-29 | 1994-04-29 | Process for passivation of the sides of a thin-film semiconductor component. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2719416A1 FR2719416A1 (en) | 1995-11-03 |
FR2719416B1 true FR2719416B1 (en) | 1996-07-05 |
Family
ID=9462685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9405240A Expired - Fee Related FR2719416B1 (en) | 1994-04-29 | 1994-04-29 | Process for passivation of the sides of a thin-film semiconductor component. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0757845A1 (en) |
JP (1) | JPH09512667A (en) |
KR (1) | KR970703043A (en) |
FR (1) | FR2719416B1 (en) |
WO (1) | WO1995030241A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5752446B2 (en) * | 2010-03-15 | 2015-07-22 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP5752447B2 (en) * | 2010-03-15 | 2015-07-22 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US8916425B2 (en) * | 2010-07-26 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device |
US9230826B2 (en) | 2010-08-26 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Etching method using mixed gas and method for manufacturing semiconductor device |
US8704230B2 (en) | 2010-08-26 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8338240B2 (en) * | 2010-10-01 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing transistor |
JP5687133B2 (en) * | 2010-11-05 | 2015-03-18 | 三菱電機株式会社 | Semiconductor device and display device |
JP6006948B2 (en) * | 2011-03-17 | 2016-10-12 | 株式会社半導体エネルギー研究所 | Microcrystalline semiconductor film and method for manufacturing semiconductor device |
JP2014038911A (en) * | 2012-08-13 | 2014-02-27 | Sony Corp | Thin film transistor and manufacturing method of the same, and display device and electronic apparatus |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4740477A (en) * | 1985-10-04 | 1988-04-26 | General Instrument Corporation | Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics |
FR2590409B1 (en) * | 1985-11-15 | 1987-12-11 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR WITH A SELF-ALIGNED GRID WITH RESPECT TO THE DRAIN AND THE SOURCE THEREOF AND TRANSISTOR OBTAINED BY THE PROCESS |
JPS62252973A (en) * | 1986-04-25 | 1987-11-04 | Nec Corp | Forward staggered type thin film transistor |
JPS62291057A (en) * | 1986-06-10 | 1987-12-17 | Citizen Watch Co Ltd | Formation of sos device |
GB2238427A (en) * | 1989-11-24 | 1991-05-29 | Philips Electronic Associated | Thin film diode devices and active matrix addressed display devices incorporating such |
US5130263A (en) * | 1990-04-17 | 1992-07-14 | General Electric Company | Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer |
JPH04171767A (en) * | 1990-11-02 | 1992-06-18 | Sharp Corp | Thin film transistor and its manufacturing method |
DE69131570T2 (en) * | 1990-11-16 | 2000-02-17 | Seiko Epson Corp., Tokio/Tokyo | Method of manufacturing a thin film semiconductor device |
JPH04321236A (en) * | 1991-04-19 | 1992-11-11 | Sony Corp | Manufacture of field-effect transistor |
FR2675947A1 (en) * | 1991-04-23 | 1992-10-30 | France Telecom | PROCESS FOR LOCAL PASSIVATION OF A SUBSTRATE BY A HYDROGEN AMORPHOUS CARBON LAYER AND METHOD FOR MANUFACTURING THIN FILM TRANSISTORS ON THE PASSIVE SUBSTRATE. |
US5252849A (en) * | 1992-03-02 | 1993-10-12 | Motorola, Inc. | Transistor useful for further vertical integration and method of formation |
JP3260165B2 (en) * | 1992-07-30 | 2002-02-25 | 松下電器産業株式会社 | Manufacturing method of thin film element |
FR2702882B1 (en) * | 1993-03-16 | 1995-07-28 | Thomson Lcd | Method for manufacturing direct step thin film transistors. |
-
1994
- 1994-04-29 FR FR9405240A patent/FR2719416B1/en not_active Expired - Fee Related
-
1995
- 1995-05-02 EP EP95919467A patent/EP0757845A1/en active Pending
- 1995-05-02 WO PCT/FR1995/000572 patent/WO1995030241A1/en not_active Application Discontinuation
- 1995-05-02 JP JP7528040A patent/JPH09512667A/en active Pending
-
1996
- 1996-10-28 KR KR1019960706045A patent/KR970703043A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR970703043A (en) | 1997-06-10 |
WO1995030241A1 (en) | 1995-11-09 |
JPH09512667A (en) | 1997-12-16 |
EP0757845A1 (en) | 1997-02-12 |
FR2719416A1 (en) | 1995-11-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |