FR2684806B1 - FIELD EFFECT TRANSISTOR TYPE SEMICONDUCTOR COMPONENT, ESPECIALLY HETEROJUNCTION. - Google Patents

FIELD EFFECT TRANSISTOR TYPE SEMICONDUCTOR COMPONENT, ESPECIALLY HETEROJUNCTION.

Info

Publication number: FR2684806B1
Authority: FR; France
Prior art keywords: heterojunction; type semiconductor; field effect; effect transistor; semiconductor component
Prior art date: 1991-12-06
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

FR9115140A

Other languages

French (fr)

Other versions

FR2684806A1 (en

Inventor

Linh T. Nuyen

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Picogiga SA

Original Assignee

Picogiga SA

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-12-06

Filing date

1991-12-06

Publication date

1994-03-18

1991-12-06 Application filed by Picogiga SA filed Critical Picogiga SA

1991-12-06 Priority to FR9115140A priority Critical patent/FR2684806B1/en

1992-12-04 Priority to PCT/FR1992/001153 priority patent/WO1993011566A1/en

1993-06-11 Publication of FR2684806A1 publication Critical patent/FR2684806A1/en

1994-03-18 Application granted granted Critical

1994-03-18 Publication of FR2684806B1 publication Critical patent/FR2684806B1/en

2011-12-06 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/801—FETs having heterojunction gate electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
- H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/602—Heterojunction gate electrodes for FETs

FR9115140A 1991-12-06 1991-12-06 FIELD EFFECT TRANSISTOR TYPE SEMICONDUCTOR COMPONENT, ESPECIALLY HETEROJUNCTION. Expired - Fee Related FR2684806B1 (en)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
FR9115140A FR2684806B1 (en)	1991-12-06	1991-12-06	FIELD EFFECT TRANSISTOR TYPE SEMICONDUCTOR COMPONENT, ESPECIALLY HETEROJUNCTION.
PCT/FR1992/001153 WO1993011566A1 (en)	1991-12-06	1992-12-04	Power semiconductor component of the field effect transistor type, particularly a heterojunction transistor

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR9115140A FR2684806B1 (en)	1991-12-06	1991-12-06	FIELD EFFECT TRANSISTOR TYPE SEMICONDUCTOR COMPONENT, ESPECIALLY HETEROJUNCTION.

Publications (2)

Publication Number	Publication Date
FR2684806A1 FR2684806A1 (en)	1993-06-11
FR2684806B1 true FR2684806B1 (en)	1994-03-18

Family

ID=9419748

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR9115140A Expired - Fee Related FR2684806B1 (en)	1991-12-06	1991-12-06	FIELD EFFECT TRANSISTOR TYPE SEMICONDUCTOR COMPONENT, ESPECIALLY HETEROJUNCTION.

Country Status (2)

Country	Link
FR (1)	FR2684806B1 (en)
WO (1)	WO1993011566A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3601649B2 (en) *	1996-12-25	2004-12-15	株式会社村田製作所	Field effect transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4641161A (en) *	1984-09-28	1987-02-03	Texas Instruments Incorporated	Heterojunction device
JPS61171170A (en) *	1985-01-25	1986-08-01	Hitachi Ltd	semiconductor equipment

1991
- 1991-12-06 FR FR9115140A patent/FR2684806B1/en not_active Expired - Fee Related
1992
- 1992-12-04 WO PCT/FR1992/001153 patent/WO1993011566A1/en active Application Filing

Also Published As

Publication number	Publication date
FR2684806A1 (en)	1993-06-11
WO1993011566A1 (en)	1993-06-10

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Legal Events

Date	Code	Title	Description
1997-10-31	ST	Notification of lapse