FR2643193B1 - Procede pour fabriquer des circuits integres a semi-conducteurs - Google Patents

Procede pour fabriquer des circuits integres a semi-conducteurs

Info

Publication number: FR2643193B1
Authority: FR; France
Prior art keywords: integrated semiconductor; semiconductor circuits; manufacturing integrated; manufacturing; circuits
Prior art date: 1989-02-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

FR9001536A

Other languages

English (en)

Other versions

FR2643193A1 (fr

Inventor

Yamada Takashi

Nagamatsu Akihito

Bamba Seiichi

Sawai Tetsuro

Nakano Haruo

Nagami Kimihiko

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sanyo Electric Co Ltd

Original Assignee

Sanyo Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-02-16

Filing date

1990-02-09

Publication date

1997-06-13

1990-02-09 Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd

1990-08-17 Publication of FR2643193A1 publication Critical patent/FR2643193A1/fr

1997-06-13 Application granted granted Critical

1997-06-13 Publication of FR2643193B1 publication Critical patent/FR2643193B1/fr

2010-02-09 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

FR9001536A 1989-02-16 1990-02-09 Procede pour fabriquer des circuits integres a semi-conducteurs Expired - Fee Related FR2643193B1 (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP3749489		1989-02-16
JP1245747A JP2675411B2 (ja)	1989-02-16	1989-09-20	半導体集積回路の製造方法

Publications (2)

Publication Number	Publication Date
FR2643193A1 FR2643193A1 (fr)	1990-08-17
FR2643193B1 true FR2643193B1 (fr)	1997-06-13

Family

ID=26376621

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR9001536A Expired - Fee Related FR2643193B1 (fr)	1989-02-16	1990-02-09	Procede pour fabriquer des circuits integres a semi-conducteurs

Country Status (4)

Country	Link
US (1)	US5051373A (fr)
JP (1)	JP2675411B2 (fr)
FR (1)	FR2643193B1 (fr)
GB (1)	GB2228619B (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2283856B (en) *	1990-04-05	1995-09-20	Gen Electric	Microwave component having tailored operating characteristics and method of tailoring
GB2284094B8 (en) *	1990-04-05	1995-12-04	Gen Electric	Microwave component having tailored operating characteristics and method of tailoring
JP2844857B2 (ja) *	1990-06-21	1999-01-13	ソニー株式会社	混成集積回路の製造装置
JP2672197B2 (ja) *	1991-04-24	1997-11-05	シャープ株式会社	金属配線膜の性能評価方法
JP2898493B2 (ja) *	1992-11-26	1999-06-02	三菱電機株式会社	ミリ波またはマイクロ波ｉｃのレイアウト設計方法及びレイアウト設計装置
US5457399A (en) *	1992-12-14	1995-10-10	Hughes Aircraft Company	Microwave monolithic integrated circuit fabrication, test method and test probes
FI19992361L (fi) *	1999-11-01	2001-05-02	Nokia Mobile Phones Ltd	Integroitujen piirien valmistusmenetelmä
US6711723B2 (en)	2000-04-28	2004-03-23	Northrop Grumman Corporation	Hybrid semi-physical and data fitting HEMT modeling approach for large signal and non-linear microwave/millimeter wave circuit CAD
US6507248B2 (en) *	2000-05-29	2003-01-14	Citizen Watch Co., Ltd.	Voltage-controlled crystal oscillator
GB2366422A (en) *	2001-03-02	2002-03-06	Mitel Semiconductor Ltd	Design, test simulation and manufacture of a semiconductor device
US6806106B2 (en) *	2001-03-20	2004-10-19	Infineon Technologies Ag	Bond wire tuning of RF power transistors and amplifiers
JP2003016133A (ja) *	2001-04-27	2003-01-17	Tdk Corp	高周波電子部品及びその設計方法
US7792595B1 (en)	2004-03-30	2010-09-07	Synopsys, Inc.	Method and system for enhancing the yield in semiconductor manufacturing
US20060190229A1 (en) *	2005-02-23	2006-08-24	International Business Machines Corporation	Method of modeling a portion of an electrical circuit using a pole-zero approximation of an s-parameter transfer function of the circuit portion
US7956628B2 (en)	2006-11-03	2011-06-07	International Business Machines Corporation	Chip-based prober for high frequency measurements and methods of measuring
JP5053965B2 (ja) *	2008-09-16	2012-10-24	日本電信電話株式会社	回路特性解析方法、装置、およびプログラム
US8867226B2 (en) *	2011-06-27	2014-10-21	Raytheon Company	Monolithic microwave integrated circuits (MMICs) having conductor-backed coplanar waveguides and method of designing such MMICs
CN114975102B (zh) *	2022-07-29	2022-10-28	泉州市三安集成电路有限公司	集成异质结双极晶体管及其制作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1145991A (en) *	1965-03-12	1969-03-19	Mullard Ltd	Improvements in and relating to methods of manufacturing electrical circuit arrangements
US4284872A (en) *	1978-01-13	1981-08-18	Burr-Brown Research Corporation	Method for thermal testing and compensation of integrated circuits
JPS63199421A (ja) *	1987-02-16	1988-08-17	Toshiba Corp	荷電ビ−ム描画方法
US4789645A (en) *	1987-04-20	1988-12-06	Eaton Corporation	Method for fabrication of monolithic integrated circuits
JP2695160B2 (ja) *	1987-04-30	1997-12-24	株式会社日立製作所	任意形状抵抗体の端子間抵抗計算方法
JP2614884B2 (ja) *	1988-02-04	1997-05-28	富士通株式会社	電子ビーム露光方法及びその装置
US4933860A (en) *	1988-05-20	1990-06-12	Trw Inc.	Method for fabricating a radio frequency integrated circuit and product formed thereby

1989
- 1989-09-20 JP JP1245747A patent/JP2675411B2/ja not_active Expired - Fee Related
1990
- 1990-01-05 US US07/461,356 patent/US5051373A/en not_active Expired - Lifetime
- 1990-02-09 FR FR9001536A patent/FR2643193B1/fr not_active Expired - Fee Related
- 1990-02-14 GB GB9003315A patent/GB2228619B/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JP2675411B2 (ja)	1997-11-12
JPH02298103A (ja)	1990-12-10
GB2228619B (en)	1993-05-05
US5051373A (en)	1991-09-24
FR2643193A1 (fr)	1990-08-17
GB2228619A (en)	1990-08-29
GB9003315D0 (en)	1990-04-11

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Legal Events

Date	Code	Title	Description
2004-12-03	ST	Notification of lapse