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FR2641412B1 - Source d'electrons du type a emission de champ - Google Patents

Source d'electrons du type a emission de champ

Info

Publication number
FR2641412B1
FR2641412B1 FR8817484A FR8817484A FR2641412B1 FR 2641412 B1 FR2641412 B1 FR 2641412B1 FR 8817484 A FR8817484 A FR 8817484A FR 8817484 A FR8817484 A FR 8817484A FR 2641412 B1 FR2641412 B1 FR 2641412B1
Authority
FR
France
Prior art keywords
field emission
electron source
emission type
type electron
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8817484A
Other languages
English (en)
Other versions
FR2641412A1 (fr
Inventor
Bernard Epsztein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales Electron Devices SA
Original Assignee
Thomson Tubes Electroniques
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Tubes Electroniques filed Critical Thomson Tubes Electroniques
Priority to FR8817484A priority Critical patent/FR2641412B1/fr
Priority to US07/451,790 priority patent/US5070282A/en
Priority to EP89403624A priority patent/EP0376825A1/fr
Priority to JP2000205A priority patent/JPH02226635A/ja
Publication of FR2641412A1 publication Critical patent/FR2641412A1/fr
Application granted granted Critical
Publication of FR2641412B1 publication Critical patent/FR2641412B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration
FR8817484A 1988-12-30 1988-12-30 Source d'electrons du type a emission de champ Expired - Lifetime FR2641412B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR8817484A FR2641412B1 (fr) 1988-12-30 1988-12-30 Source d'electrons du type a emission de champ
US07/451,790 US5070282A (en) 1988-12-30 1989-12-18 An electron source of the field emission type
EP89403624A EP0376825A1 (fr) 1988-12-30 1989-12-22 Source d'électrons du type à émission de champ
JP2000205A JPH02226635A (ja) 1988-12-30 1990-01-04 電界放出型電子源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8817484A FR2641412B1 (fr) 1988-12-30 1988-12-30 Source d'electrons du type a emission de champ

Publications (2)

Publication Number Publication Date
FR2641412A1 FR2641412A1 (fr) 1990-07-06
FR2641412B1 true FR2641412B1 (fr) 1991-02-15

Family

ID=9373621

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8817484A Expired - Lifetime FR2641412B1 (fr) 1988-12-30 1988-12-30 Source d'electrons du type a emission de champ

Country Status (4)

Country Link
US (1) US5070282A (fr)
EP (1) EP0376825A1 (fr)
JP (1) JPH02226635A (fr)
FR (1) FR2641412B1 (fr)

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JP3235172B2 (ja) * 1991-05-13 2001-12-04 セイコーエプソン株式会社 電界電子放出装置
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US5229331A (en) * 1992-02-14 1993-07-20 Micron Technology, Inc. Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
FR2687841B1 (fr) * 1992-02-21 1994-04-08 Commissariat A Energie Atomique Ecran cathodoluminescent comprenant une source matricielle d'electrons.
US5186670A (en) * 1992-03-02 1993-02-16 Micron Technology, Inc. Method to form self-aligned gate structures and focus rings
US5259799A (en) * 1992-03-02 1993-11-09 Micron Technology, Inc. Method to form self-aligned gate structures and focus rings
US5424605A (en) * 1992-04-10 1995-06-13 Silicon Video Corporation Self supporting flat video display
US5477105A (en) * 1992-04-10 1995-12-19 Silicon Video Corporation Structure of light-emitting device with raised black matrix for use in optical devices such as flat-panel cathode-ray tubes
EP0596242B1 (fr) * 1992-11-02 1998-08-26 Motorola, Inc. Dispositif d'affichage à cathodes froides à intensité modulé
JPH08138561A (ja) * 1992-12-07 1996-05-31 Mitsuteru Kimura 微小真空デバイス
WO1994020975A1 (fr) * 1993-03-11 1994-09-15 Fed Corporation Structure de tete d'emetteur, dispositif d'emission de champ comprenant cette structure et procede associe
US5686790A (en) * 1993-06-22 1997-11-11 Candescent Technologies Corporation Flat panel device with ceramic backplate
US5955849A (en) * 1993-11-15 1999-09-21 The United States Of America As Represented By The Secretary Of The Navy Cold field emitters with thick focusing grids
JP3131339B2 (ja) * 1993-12-22 2001-01-31 三菱電機株式会社 陰極、陰極線管および陰極線管の作動方法
US5528103A (en) * 1994-01-31 1996-06-18 Silicon Video Corporation Field emitter with focusing ridges situated to sides of gate
EP0675519A1 (fr) * 1994-03-30 1995-10-04 AT&T Corp. Appareil comprenant des émetteurs à effet de champ
US5552659A (en) * 1994-06-29 1996-09-03 Silicon Video Corporation Structure and fabrication of gated electron-emitting device having electron optics to reduce electron-beam divergence
US5486126A (en) * 1994-11-18 1996-01-23 Micron Display Technology, Inc. Spacers for large area displays
US5598056A (en) * 1995-01-31 1997-01-28 Lucent Technologies Inc. Multilayer pillar structure for improved field emission devices
JP3070469B2 (ja) * 1995-03-20 2000-07-31 日本電気株式会社 電界放射冷陰極およびその製造方法
US5763987A (en) * 1995-05-30 1998-06-09 Mitsubishi Denki Kabushiki Kaisha Field emission type electron source and method of making same
US5604399A (en) * 1995-06-06 1997-02-18 International Business Machines Corporation Optimal gate control design and fabrication method for lateral field emission devices
TW413828B (en) * 1995-07-07 2000-12-01 Nippon Electric Co Electron gun provided with a field emission cold cathode and an improved gate structure
US5688158A (en) * 1995-08-24 1997-11-18 Fed Corporation Planarizing process for field emitter displays and other electron source applications
US5828288A (en) * 1995-08-24 1998-10-27 Fed Corporation Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications
US5844351A (en) * 1995-08-24 1998-12-01 Fed Corporation Field emitter device, and veil process for THR fabrication thereof
US5716251A (en) * 1995-09-15 1998-02-10 Micron Display Technology, Inc. Sacrificial spacers for large area displays
JP3033484B2 (ja) * 1995-12-21 2000-04-17 日本電気株式会社 電子線露光装置
US5916004A (en) * 1996-01-11 1999-06-29 Micron Technology, Inc. Photolithographically produced flat panel display surface plate support structure
US6008577A (en) * 1996-01-18 1999-12-28 Micron Technology, Inc. Flat panel display with magnetic focusing layer
US5705079A (en) * 1996-01-19 1998-01-06 Micron Display Technology, Inc. Method for forming spacers in flat panel displays using photo-etching
US5757138A (en) * 1996-05-01 1998-05-26 Industrial Technology Research Institute Linear response field emission device
US6022256A (en) * 1996-11-06 2000-02-08 Micron Display Technology, Inc. Field emission display and method of making same
US5984746A (en) 1996-12-12 1999-11-16 Micron Technology, Inc. Attaching spacers in a display device
US5851133A (en) 1996-12-24 1998-12-22 Micron Display Technology, Inc. FED spacer fibers grown by laser drive CVD
US5888112A (en) * 1996-12-31 1999-03-30 Micron Technology, Inc. Method for forming spacers on a display substrate
GB2322471A (en) * 1997-02-24 1998-08-26 Ibm Self stabilising cathode
US6194838B1 (en) 1997-02-24 2001-02-27 International Business Machines Corporation Self stabilizing non-thermionic source for flat panel CRT displays
US6013974A (en) * 1997-05-30 2000-01-11 Candescent Technologies Corporation Electron-emitting device having focus coating that extends partway into focus openings
US5920151A (en) * 1997-05-30 1999-07-06 Candescent Technologies Corporation Structure and fabrication of electron-emitting device having focus coating contacted through underlying access conductor
US6002199A (en) * 1997-05-30 1999-12-14 Candescent Technologies Corporation Structure and fabrication of electron-emitting device having ladder-like emitter electrode
US6323831B1 (en) 1997-09-17 2001-11-27 Kabushiki Kaisha Toshiba Electron emitting device and switching circuit using the same
US6224447B1 (en) 1998-06-22 2001-05-01 Micron Technology, Inc. Electrode structures, display devices containing the same, and methods for making the same
US6392333B1 (en) * 1999-03-05 2002-05-21 Applied Materials, Inc. Electron gun having magnetic collimator
KR100375848B1 (ko) * 1999-03-19 2003-03-15 가부시끼가이샤 도시바 전계방출소자의 제조방법 및 디스플레이 장치
US6391670B1 (en) 1999-04-29 2002-05-21 Micron Technology, Inc. Method of forming a self-aligned field extraction grid
US6155900A (en) 1999-10-12 2000-12-05 Micron Technology, Inc. Fiber spacers in large area vacuum displays and method for manufacture
FR2800510B1 (fr) * 1999-10-28 2001-11-23 Commissariat Energie Atomique Procede de commande de structure comportant une source d'electrons a effet de champ
US6989631B2 (en) * 2001-06-08 2006-01-24 Sony Corporation Carbon cathode of a field emission display with in-laid isolation barrier and support
US6815875B2 (en) * 2001-02-27 2004-11-09 Hewlett-Packard Development Company, L.P. Electron source having planar emission region and focusing structure
US6756730B2 (en) * 2001-06-08 2004-06-29 Sony Corporation Field emission display utilizing a cathode frame-type gate and anode with alignment method
US7002290B2 (en) * 2001-06-08 2006-02-21 Sony Corporation Carbon cathode of a field emission display with integrated isolation barrier and support on substrate
US6682382B2 (en) * 2001-06-08 2004-01-27 Sony Corporation Method for making wires with a specific cross section for a field emission display
FR2828956A1 (fr) * 2001-06-11 2003-02-28 Pixtech Sa Protection locale d'une grille d'ecran plat a micropointes
US6628052B2 (en) * 2001-10-05 2003-09-30 Hewlett-Packard Development Company, L.P. Enhanced electron field emitter spindt tip and method for fabricating enhanced spindt tips
WO2003063120A1 (fr) 2002-01-15 2003-07-31 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Procede et appareil permettant de reguler une emission electronique dans des dispositifs a emission de champ
US7012582B2 (en) * 2002-11-27 2006-03-14 Sony Corporation Spacer-less field emission display
US20040145299A1 (en) * 2003-01-24 2004-07-29 Sony Corporation Line patterned gate structure for a field emission display
US7071629B2 (en) * 2003-03-31 2006-07-04 Sony Corporation Image display device incorporating driver circuits on active substrate and other methods to reduce interconnects
US20040189552A1 (en) * 2003-03-31 2004-09-30 Sony Corporation Image display device incorporating driver circuits on active substrate to reduce interconnects
GB2401720B (en) * 2003-05-16 2006-04-19 Printable Field Emitters Ltd Field electron emitters
KR100580659B1 (ko) * 2004-02-20 2006-05-16 삼성전자주식회사 포커싱 제어전극을 가진 전계방출소자 및 전계방출 표시소자
EP1760762B1 (fr) * 2005-09-06 2012-02-01 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Dispositif et procédé pour la sélection d' une surface d' émission d'un motif d' émission
US7372195B2 (en) * 2005-09-10 2008-05-13 Applied Materials, Inc. Electron beam source having an extraction electrode provided with a magnetic disk element
JP2008091279A (ja) * 2006-10-04 2008-04-17 Fuji Heavy Ind Ltd 発光装置
US7847273B2 (en) * 2007-03-30 2010-12-07 Eloret Corporation Carbon nanotube electron gun
US9362078B2 (en) 2012-12-27 2016-06-07 Schlumberger Technology Corporation Ion source using field emitter array cathode and electromagnetic confinement
US20140183349A1 (en) * 2012-12-27 2014-07-03 Schlumberger Technology Corporation Ion source using spindt cathode and electromagnetic confinement
US8866068B2 (en) 2012-12-27 2014-10-21 Schlumberger Technology Corporation Ion source with cathode having an array of nano-sized projections
US20170333897A1 (en) * 2016-05-19 2017-11-23 Plasmotica, LLC Self-flowing microfluidic analytical chip
WO2022219536A1 (fr) * 2021-04-12 2022-10-20 Ncx Corporation Accordeur d'énergie pour un dispositif cathodique à émission de champ à déclenchement et procédé associé

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US3810025A (en) * 1971-04-20 1974-05-07 Jeol Ltd Field emission type electron gun
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US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes

Also Published As

Publication number Publication date
FR2641412A1 (fr) 1990-07-06
EP0376825A1 (fr) 1990-07-04
JPH02226635A (ja) 1990-09-10
US5070282A (en) 1991-12-03

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Legal Events

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ST Notification of lapse