FR2626406B1 - Transistor bipolaire compatible avec la technologie mos - Google Patents

Transistor bipolaire compatible avec la technologie mos

Info

Publication number: FR2626406B1
Authority: FR; France
Prior art keywords: bipolar transistor; mos technology; transistor compatible; compatible; mos
Prior art date: 1988-01-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

FR8800702A

Other languages

English (en)

Other versions

FR2626406A1 (fr

Inventor

Alain Nouailhat

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Etat Francais

Original Assignee

Etat Francais

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-01-22

Filing date

1988-01-22

Publication date

1992-01-24

1988-01-22 Application filed by Etat Francais filed Critical Etat Francais

1988-01-22 Priority to FR8800702A priority Critical patent/FR2626406B1/fr

1989-07-28 Publication of FR2626406A1 publication Critical patent/FR2626406A1/fr

1992-01-24 Application granted granted Critical

1992-01-24 Publication of FR2626406B1 publication Critical patent/FR2626406B1/fr

2008-01-22 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs

FR8800702A 1988-01-22 1988-01-22 Transistor bipolaire compatible avec la technologie mos Expired - Lifetime FR2626406B1 (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
FR8800702A FR2626406B1 (fr)	1988-01-22	1988-01-22	Transistor bipolaire compatible avec la technologie mos

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR8800702A FR2626406B1 (fr)	1988-01-22	1988-01-22	Transistor bipolaire compatible avec la technologie mos

Publications (2)

Publication Number	Publication Date
FR2626406A1 FR2626406A1 (fr)	1989-07-28
FR2626406B1 true FR2626406B1 (fr)	1992-01-24

Family

ID=9362525

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR8800702A Expired - Lifetime FR2626406B1 (fr)	1988-01-22	1988-01-22	Transistor bipolaire compatible avec la technologie mos

Country Status (1)

Country	Link
FR (1)	FR2626406B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2672733B1 (fr) *	1991-02-13	1997-08-22	France Telecom	Perfectionnement au collecteur d'un transistor bipolaire compatible avec la technologie mos.
DE19611692C2 (de) *	1996-03-25	2002-07-18	Infineon Technologies Ag	Bipolartransistor mit Hochenergie-implantiertem Kollektor und Herstellverfahren

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61160965A (ja) *	1985-01-08	1986-07-21	Matsushita Electric Ind Co Ltd	半導体集積回路装置
GB8507624D0 (en) *	1985-03-23	1985-05-01	Standard Telephones Cables Ltd	Semiconductor devices
DE3767431D1 (de) *	1986-04-23	1991-02-21	American Telephone & Telegraph	Verfahren zur herstellung von halbleiterbauelementen.

1988
- 1988-01-22 FR FR8800702A patent/FR2626406B1/fr not_active Expired - Lifetime

Also Published As

Publication number	Publication date
FR2626406A1 (fr)	1989-07-28

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Legal Events

Date	Code	Title	Description
1991-12-13	TP	Transmission of property
1993-11-26	ST	Notification of lapse