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FR2615036B1 - Machine pour la fabrication de silicium poreux - Google Patents

Machine pour la fabrication de silicium poreux

Info

Publication number
FR2615036B1
FR2615036B1 FR8706683A FR8706683A FR2615036B1 FR 2615036 B1 FR2615036 B1 FR 2615036B1 FR 8706683 A FR8706683 A FR 8706683A FR 8706683 A FR8706683 A FR 8706683A FR 2615036 B1 FR2615036 B1 FR 2615036B1
Authority
FR
France
Prior art keywords
manufacture
machine
porous silicon
porous
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8706683A
Other languages
English (en)
Other versions
FR2615036A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Etat Francais
Original Assignee
Etat Francais
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etat Francais filed Critical Etat Francais
Priority to FR8706683A priority Critical patent/FR2615036B1/fr
Publication of FR2615036A1 publication Critical patent/FR2615036A1/fr
Application granted granted Critical
Publication of FR2615036B1 publication Critical patent/FR2615036B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/0203—Making porous regions on the surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
FR8706683A 1987-05-05 1987-05-05 Machine pour la fabrication de silicium poreux Expired FR2615036B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8706683A FR2615036B1 (fr) 1987-05-05 1987-05-05 Machine pour la fabrication de silicium poreux

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8706683A FR2615036B1 (fr) 1987-05-05 1987-05-05 Machine pour la fabrication de silicium poreux

Publications (2)

Publication Number Publication Date
FR2615036A1 FR2615036A1 (fr) 1988-11-10
FR2615036B1 true FR2615036B1 (fr) 1989-08-18

Family

ID=9351032

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8706683A Expired FR2615036B1 (fr) 1987-05-05 1987-05-05 Machine pour la fabrication de silicium poreux

Country Status (1)

Country Link
FR (1) FR2615036B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2609614A (en) * 1946-04-13 1952-09-09 Johnson Co Gage Aligned thread gauge
DE3917702A1 (de) * 1989-05-31 1990-12-06 Siemens Ag Verfahren zur ortsaufgeloesten bestimmung der diffusionslaenge von minoritaetsladungstraegern in einem halbleiterkristallkoerper mit hilfe einer elektrolytischen zelle
JP3376258B2 (ja) * 1996-11-28 2003-02-10 キヤノン株式会社 陽極化成装置及びそれに関連する装置及び方法
JP3985065B2 (ja) * 1997-05-14 2007-10-03 忠弘 大見 多孔質シリコン基板の形成方法及び多孔質シリコン基板の形成装置
JP3413090B2 (ja) * 1997-12-26 2003-06-03 キヤノン株式会社 陽極化成装置及び陽極化成処理方法
JPH11243076A (ja) * 1998-02-26 1999-09-07 Canon Inc 陽極化成方法及び陽極化成装置並びに半導体基板の製造方法
EP0987556A3 (fr) * 1998-08-10 2001-05-09 Siemens Aktiengesellschaft Dispositif de mesure de la longueur de diffusion dans des corps semi-conducteurs
GB2626126A (en) * 2022-12-12 2024-07-17 Iqe Plc Systems and methods for porous tool

Also Published As

Publication number Publication date
FR2615036A1 (fr) 1988-11-10

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Legal Events

Date Code Title Description
TP Transmission of property