FR2604563B1 - Dispositif photovoltaique - Google Patents

Dispositif photovoltaique

Info

Publication number: FR2604563B1
Authority: FR; France
Prior art keywords: photovoltaic device; photovoltaic
Prior art date: 1986-09-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

FR878713207A

Other languages

English (en)

Other versions

FR2604563A1 (fr

Inventor

Kaneo Watanabe

Yukio Nakashima

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sanyo Electric Co Ltd

Original Assignee

Sanyo Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-09-26

Filing date

1987-09-24

Publication date

1991-08-30

1987-09-24 Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd

1988-04-01 Publication of FR2604563A1 publication Critical patent/FR2604563A1/fr

1991-08-30 Application granted granted Critical

1991-08-30 Publication of FR2604563B1 publication Critical patent/FR2604563B1/fr

2007-09-24 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells

FR878713207A 1986-09-26 1987-09-24 Dispositif photovoltaique Expired - Fee Related FR2604563B1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP61228798A JPS6384075A (ja)	1986-09-26	1986-09-26	光起電力装置

Publications (2)

Publication Number	Publication Date
FR2604563A1 FR2604563A1 (fr)	1988-04-01
FR2604563B1 true FR2604563B1 (fr)	1991-08-30

Family

ID=16882019

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR878713207A Expired - Fee Related FR2604563B1 (fr)	1986-09-26	1987-09-24	Dispositif photovoltaique

Country Status (4)

Country	Link
US (1)	US4781765A (fr)
JP (1)	JPS6384075A (fr)
DE (1)	DE3732619A1 (fr)
FR (1)	FR2604563B1 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61222277A (ja) *	1985-03-28	1986-10-02	Sanyo Electric Co Ltd	光起電力装置及びその製造方法
JPH01145875A (ja) *	1987-12-02	1989-06-07	Hitachi Ltd	アモルファスＳｉ太陽電池
JPH01304786A (ja) *	1988-06-01	1989-12-08	Mitsubishi Electric Corp	光発電素子
US5055141A (en) *	1990-01-19	1991-10-08	Solarex Corporation	Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells
JP3047666B2 (ja) *	1993-03-16	2000-05-29	富士電機株式会社	シリコンオキサイド半導体膜の成膜方法
JPH05243596A (ja) *	1992-03-02	1993-09-21	Showa Shell Sekiyu Kk	積層型太陽電池の製造方法
GB2301939B (en) *	1994-03-25	1998-10-21	Amoco Enron Solar	Increasing Stabilized Performance of Amorphous Silicon Based Devices Produced by Highly Hydrogen Diluted Lower Temperature Plasma Deposition
US6680489B1 (en) *	1995-12-20	2004-01-20	Advanced Technology Materials, Inc.	Amorphous silicon carbide thin film coating
KR101024288B1 (ko) *	2003-07-24	2011-03-29	가부시키가이샤 가네카	실리콘계 박막 태양전지
US20080135083A1 (en) *	2006-12-08	2008-06-12	Higher Way Electronic Co., Ltd.	Cascade solar cell with amorphous silicon-based solar cell
US8203071B2 (en)	2007-01-18	2012-06-19	Applied Materials, Inc.	Multi-junction solar cells and methods and apparatuses for forming the same
US20090104733A1 (en) *	2007-10-22	2009-04-23	Yong Kee Chae	Microcrystalline silicon deposition for thin film solar applications
JP2011503848A (ja)	2007-11-02	2011-01-27	アプライドマテリアルズインコーポレイテッド	堆積プロセス間のプラズマ処置
DE102008014260A1 (de) *	2008-03-13	2009-09-24	Schott Solar Gmbh	Silizium-Solarzelle
TWI469224B (zh) *	2008-10-20	2015-01-11	Ind Tech Res Inst	有機薄膜電晶體及其製造方法
TW201025648A (en) *	2008-12-23	2010-07-01	Ind Tech Res Inst	Transparent solar cell module and method of fabricating the same
US20110088760A1 (en) *	2009-10-20	2011-04-21	Applied Materials, Inc.	Methods of forming an amorphous silicon layer for thin film solar cell application
US20120180855A1 (en) *	2011-01-19	2012-07-19	Qualcomm Mems Technologies, Inc.	Photovoltaic devices and methods of forming the same
JPWO2013168515A1 (ja) *	2012-05-10	2016-01-07	シャープ株式会社	光電変換装置およびその製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4342044A (en) *	1978-03-08	1982-07-27	Energy Conversion Devices, Inc.	Method for optimizing photoresponsive amorphous alloys and devices
US4272641A (en) *	1979-04-19	1981-06-09	Rca Corporation	Tandem junction amorphous silicon solar cells
JPS5696877A (en) *	1979-12-30	1981-08-05	Shunpei Yamazaki	Photoelectric converter
CA1176740A (fr) *	1980-12-03	1984-10-23	Yoshihisa Tawada	Cellule photovoltaique a haute tension ayant une heterojonction de semiconducteur amorphe et de silicium amorphe
US4338482A (en) *	1981-02-17	1982-07-06	Roy G. Gordon	Photovoltaic cell
JPS58209171A (ja) *	1982-05-31	1983-12-06	Toshiba Corp	光起電力装置の製造方法
JPS5914679A (ja) *	1982-07-16	1984-01-25	Toshiba Corp	光起電力装置
DE8232492U1 (de) *	1982-11-19	1986-03-27	Siemens AG, 1000 Berlin und 8000 München	Solarzelle aus amorphem Silizium
JPS59108370A (ja) *	1982-12-14	1984-06-22	Kanegafuchi Chem Ind Co Ltd	光起電力装置
GB2137810B (en) *	1983-03-08	1986-10-22	Agency Ind Science Techn	A solar cell of amorphous silicon
JPS60154521A (ja) *	1984-01-23	1985-08-14	Semiconductor Energy Lab Co Ltd	炭化珪素被膜作製方法
US4531015A (en) *	1984-04-12	1985-07-23	Atlantic Richfield Company	PIN Amorphous silicon solar cell with nitrogen compensation
JPS6191974A (ja) *	1984-10-11	1986-05-10	Kanegafuchi Chem Ind Co Ltd	耐熱性マルチジヤンクシヨン型半導体素子
JPS6193673A (ja) *	1984-10-12	1986-05-12	Sanyo Electric Co Ltd	光起電力素子
JPS6273784A (ja) *	1985-09-27	1987-04-04	Sanyo Electric Co Ltd	光起電力装置
US4713493A (en) *	1985-10-11	1987-12-15	Energy Conversion Devices, Inc.	Power generating optical filter
CA1321660C (fr) *	1985-11-05	1993-08-24	Hideo Yamagishi	Dispositif a semiconducteur amorphe a couche intermediaire a grande resistivite ou fortement dopee
US4718947A (en) *	1986-04-17	1988-01-12	Solarex Corporation	Superlattice doped layers for amorphous silicon photovoltaic cells
FR2597662B1 (fr) *	1986-04-22	1988-06-17	Thomson Csf	Photodiode pin realisee a partir de semi-conducteur amorphe

1986
- 1986-09-26 JP JP61228798A patent/JPS6384075A/ja active Pending
1987
- 1987-09-14 US US07/096,944 patent/US4781765A/en not_active Expired - Lifetime
- 1987-09-24 FR FR878713207A patent/FR2604563B1/fr not_active Expired - Fee Related
- 1987-09-28 DE DE19873732619 patent/DE3732619A1/de active Granted

Also Published As

Publication number	Publication date
JPS6384075A (ja)	1988-04-14
US4781765A (en)	1988-11-01
FR2604563A1 (fr)	1988-04-01
DE3732619C2 (fr)	1992-02-27
DE3732619A1 (de)	1988-03-31

Publication	Publication Date	Title
FR2588123B1 (fr)	1990-07-13	Dispositif photovoltaique
FR2650916B1 (fr)	1993-03-05	Dispositif photovoltaique
BR8705023A (pt)	1988-05-24	Dispositivo transportador
FR2625043B1 (fr)	1994-02-18	Dispositif semi-conducteur
FR2604563B1 (fr)	1991-08-30	Dispositif photovoltaique
FR2601506B1 (fr)	1992-03-13	Dispositif de conversion photo-electrique
FR2585518B1 (fr)	1987-09-25	Dispositif de branchement
DK297187A (da)	1987-12-11	Regnbuedannende anordning
FR2604561B1 (fr)	1991-08-30	Dispositif photovoltaique
FR2575865B1 (fr)	1991-05-03	Dispositif semi-conducteur integre
FR2620572B1 (fr)	1992-04-24	Dispositif photovoltaique
FR2599462B1 (fr)	1989-07-07	Dispositif de jonction flexible
FR2602293B1 (fr)	1990-08-03	Dispositif antisismique
FR2608285B2 (fr)	1991-04-19	Dispositif antivol
FR2606161B1 (fr)	1989-04-21	Dispositif antivol
DK360387D0 (da)	1987-07-10	Bestraalingsanordning
BR8703368A (pt)	1988-03-15	Dispositivo vibro-estimulador
IT208171Z2 (it)	1988-04-11	Dispositivo seguicamma
FR2593569B1 (fr)	1988-08-26	Dispositif de raccordement
RO95549A2 (fr)	1988-09-30	Dispositif de suprefinissage
AT385885B (de)	1988-05-25	Tragvorrichtung
ATA121086A (de)	1988-01-15	Iontophoresegeraet
BR8705352A (pt)	1988-05-24	Dispositivo taquimetrico
FR2604082B1 (fr)	1994-06-03	Dispositif de mammographie
FR2627591B1 (fr)	1990-08-03	Dispositif tachymetrique perfectionne

Legal Events

Date	Code	Title	Description
2007-06-29	ST	Notification of lapse	Effective date: 20070531