FR2601816B1 - Procede de formation sur un substrat d'une couche de materiau semi-conducteur a base d'elements des groupes ii et vi - Google Patents

Procede de formation sur un substrat d'une couche de materiau semi-conducteur a base d'elements des groupes ii et vi

Info

Publication number: FR2601816B1
Authority: FR; France
Prior art keywords: substrate; elements; group; forming; layer
Prior art date: 1986-06-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

FR878708637A

Other languages

English (en)

Other versions

FR2601816A1 (fr

Inventor

William E Hoke

Lindley T Specht

Ralph Korenstein

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Raytheon Co

Original Assignee

Raytheon Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-06-20

Filing date

1987-06-19

Publication date

1990-09-14

1987-06-19 Application filed by Raytheon Co filed Critical Raytheon Co

1988-01-22 Publication of FR2601816A1 publication Critical patent/FR2601816A1/fr

1990-09-14 Application granted granted Critical

1990-09-14 Publication of FR2601816B1 publication Critical patent/FR2601816B1/fr

2007-06-19 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

SNSBQRXQYMXFJZ-MOKYGWKMSA-N (2s)-6-amino-n-[(2s,3s)-1-amino-3-methyl-1-oxopentan-2-yl]-2-[[(2s)-2-[[(2s)-2-[[(2s)-2-[[(2s)-2-[[(2s)-2-[[(2s)-2-[[(2s)-2-amino-3-phenylpropanoyl]amino]-3-hydroxypropanoyl]amino]propanoyl]amino]-3-hydroxypropanoyl]amino]propanoyl]amino]-4-methylpentanoy Chemical compound CC[C@H](C)[C@@H](C(N)=O)NC(=O)[C@H](CCCCN)NC(=O)[C@H](C)NC(=O)[C@H](CC(C)C)NC(=O)[C@H](C)NC(=O)[C@H](CO)NC(=O)[C@H](C)NC(=O)[C@H](CO)NC(=O)[C@@H](N)CC1=CC=CC=C1 SNSBQRXQYMXFJZ-MOKYGWKMSA-N 0.000 title 1
239000000463 material Substances 0.000 title 1
239000004065 semiconductor Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Materials Engineering (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Crystallography & Structural Chemistry (AREA)
Organic Chemistry (AREA)
Metallurgy (AREA)
Inorganic Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Chemical Vapour Deposition (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

FR878708637A 1986-06-20 1987-06-19 Procede de formation sur un substrat d'une couche de materiau semi-conducteur a base d'elements des groupes ii et vi Expired - Fee Related FR2601816B1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US06/876,608 US4886683A (en)	1986-06-20	1986-06-20	Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials

Publications (2)

Publication Number	Publication Date
FR2601816A1 FR2601816A1 (fr)	1988-01-22
FR2601816B1 true FR2601816B1 (fr)	1990-09-14

Family

ID=25368139

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR878708637A Expired - Fee Related FR2601816B1 (fr)	1986-06-20	1987-06-19	Procede de formation sur un substrat d'une couche de materiau semi-conducteur a base d'elements des groupes ii et vi

Country Status (5)

Country	Link
US (1)	US4886683A (fr)
JP (1)	JPH0654760B2 (fr)
DE (1)	DE3720413A1 (fr)
FR (1)	FR2601816B1 (fr)
GB (1)	GB2193228B (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CA1319587C (fr) *	1986-12-18	1993-06-29	William Hoke	Croissance par depot de vapeur organometallique de semiconducteurs de groupes ii-vi a uniformite amelioree
US5483919A (en) *	1990-08-31	1996-01-16	Nippon Telegraph And Telephone Corporation	Atomic layer epitaxy method and apparatus
US5149596A (en) *	1990-10-05	1992-09-22	The United States Of America As Represented By The United States Department Of Energy	Vapor deposition of thin films
US5202283A (en) *	1991-02-19	1993-04-13	Rockwell International Corporation	Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species
JPH05267186A (ja) *	1992-03-18	1993-10-15	Fujitsu Ltd	気相成長装置および該装置を用いた気相成長方法
US5382542A (en) *	1993-07-26	1995-01-17	Hughes Aircraft Company	Method of growth of II-VI materials on silicon using As passivation
US5665640A (en) *	1994-06-03	1997-09-09	Sony Corporation	Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5975912A (en) *	1994-06-03	1999-11-02	Materials Research Corporation	Low temperature plasma-enhanced formation of integrated circuits
US5628829A (en) *	1994-06-03	1997-05-13	Materials Research Corporation	Method and apparatus for low temperature deposition of CVD and PECVD films
AU1745695A (en) *	1994-06-03	1996-01-04	Materials Research Corporation	A method of nitridization of titanium thin films
US5972790A (en) *	1995-06-09	1999-10-26	Tokyo Electron Limited	Method for forming salicides
US7182812B2 (en) *	2002-09-16	2007-02-27	University Of Louisville	Direct synthesis of oxide nanostructures of low-melting metals
US6806228B2 (en)	2000-06-29	2004-10-19	University Of Louisville	Low temperature synthesis of semiconductor fibers
US7252811B2 (en) *	2000-06-29	2007-08-07	University Of Louisville	Low temperature synthesis of silicon fibers
US7713352B2 (en) *	2001-06-29	2010-05-11	University Of Louisville Research Foundation, Inc.	Synthesis of fibers of inorganic materials using low-melting metals
US7771689B2 (en) *	2002-11-08	2010-08-10	University Of Louisville Research Foundation, Inc	Bulk synthesis of metal and metal based dielectric nanowires

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE551488A (fr) *	1955-10-05
NL279070A (fr) *	1959-06-18
US3083550A (en) *	1961-02-23	1963-04-02	Alloyd Corp	Process of coating vitreous filaments
US3218203A (en) *	1961-10-09	1965-11-16	Monsanto Co	Altering proportions in vapor deposition process to form a mixed crystal graded energy gap
NL6505307A (fr) *	1964-06-25	1965-12-27
GB1246456A (en) *	1967-11-22	1971-09-15	Matsushita Electronics Corp	Semiconductor device and method of manufacturing same
US3619282A (en) *	1968-09-27	1971-11-09	Ibm	Method for vapor growing ternary compounds
CA935336A (en) *	1970-05-29	1973-10-16	V. Melnikov Valery	Method of depositing inorganic coatings from vapour phase
GB1595660A (en) *	1978-05-25	1981-08-12	Standard Telephones Cables Ltd	Corrosion protection of metal surfaces
US4214971A (en) *	1978-08-14	1980-07-29	The Dow Chemical Company	Electrode coating process
GB2041983B (en) *	1978-11-09	1982-12-01	Standard Telephones Cables Ltd	Metallising semiconductor devices
GB2067540A (en) *	1980-01-16	1981-07-30	American Glass Res	Improved method for applying an inorganic titanium coating to a glass surface
US4321073A (en) *	1980-10-15	1982-03-23	Hughes Aircraft Company	Method and apparatus for forming metal coating on glass fiber
US4439267A (en) *	1982-09-29	1984-03-27	The United States Of America As Represented By The Secretary Of The Army	Vapor-phase method for growing mercury cadmium telluride
EP0106537B1 (fr) *	1982-10-19	1989-01-25	The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and	Dépôt chimique en phase vapeur de films en partant de composés organométalliques
US4524090A (en) *	1984-04-30	1985-06-18	The United States Of America As Represented By The Secretary Of The Navy	Deposition of compounds from multi-component organo-metals
US4568397A (en) *	1984-09-12	1986-02-04	Raytheon Company	Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
US4920068A (en) *	1986-04-02	1990-04-24	American Cyanamid Company	Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
US4828938A (en) *	1986-04-11	1989-05-09	Hughes Aircraft Company	Method for depositing materials containing tellurium and product

1986
- 1986-06-20 US US06/876,608 patent/US4886683A/en not_active Expired - Fee Related
1987
- 1987-06-17 GB GB8714146A patent/GB2193228B/en not_active Expired - Fee Related
- 1987-06-19 JP JP62153222A patent/JPH0654760B2/ja not_active Expired - Lifetime
- 1987-06-19 DE DE19873720413 patent/DE3720413A1/de not_active Withdrawn
- 1987-06-19 FR FR878708637A patent/FR2601816B1/fr not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US4886683A (en)	1989-12-12
JPH0654760B2 (ja)	1994-07-20
DE3720413A1 (de)	1988-01-28
GB8714146D0 (en)	1987-07-22
GB2193228B (en)	1991-02-20
JPS634625A (ja)	1988-01-09
FR2601816A1 (fr)	1988-01-22
GB2193228A (en)	1988-02-03

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Legal Events

Date	Code	Title	Description
1994-04-29	ST	Notification of lapse