FR2591033B1 - Photocathode a rendement eleve - Google Patents
Photocathode a rendement eleveInfo
- Publication number
- FR2591033B1 FR2591033B1 FR8517719A FR8517719A FR2591033B1 FR 2591033 B1 FR2591033 B1 FR 2591033B1 FR 8517719 A FR8517719 A FR 8517719A FR 8517719 A FR8517719 A FR 8517719A FR 2591033 B1 FR2591033 B1 FR 2591033B1
- Authority
- FR
- France
- Prior art keywords
- photocathode
- high yield
- yield
- yield photocathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8517719A FR2591033B1 (fr) | 1985-11-29 | 1985-11-29 | Photocathode a rendement eleve |
US06/934,481 US4749903A (en) | 1985-11-29 | 1986-11-24 | High-performance photocathode |
DE8686402618T DE3670176D1 (de) | 1985-11-29 | 1986-11-25 | Fotokathode mit hohem wirkungsgrad. |
EP86402618A EP0228323B1 (fr) | 1985-11-29 | 1986-11-25 | Photocathode à rendement élevé |
JP61284112A JPS62133634A (ja) | 1985-11-29 | 1986-11-28 | 高性能光電陰極 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8517719A FR2591033B1 (fr) | 1985-11-29 | 1985-11-29 | Photocathode a rendement eleve |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2591033A1 FR2591033A1 (fr) | 1987-06-05 |
FR2591033B1 true FR2591033B1 (fr) | 1988-01-08 |
Family
ID=9325295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8517719A Expired FR2591033B1 (fr) | 1985-11-29 | 1985-11-29 | Photocathode a rendement eleve |
Country Status (5)
Country | Link |
---|---|
US (1) | US4749903A (fr) |
EP (1) | EP0228323B1 (fr) |
JP (1) | JPS62133634A (fr) |
DE (1) | DE3670176D1 (fr) |
FR (1) | FR2591033B1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05234501A (ja) * | 1992-02-25 | 1993-09-10 | Hamamatsu Photonics Kk | 光電子放出面及びそれを用いた電子管 |
FR2688343A1 (fr) * | 1992-03-06 | 1993-09-10 | Thomson Tubes Electroniques | Tube intensificateur d'image notamment radiologique, du type a galette de microcanaux. |
FR2698482B1 (fr) * | 1992-11-20 | 1994-12-23 | Thomson Tubes Electroniques | Dispositif générateur d'images par effet de luminescence. |
US5404026A (en) * | 1993-01-14 | 1995-04-04 | Regents Of The University Of California | Infrared-sensitive photocathode |
JP3565529B2 (ja) * | 1996-05-28 | 2004-09-15 | 浜松ホトニクス株式会社 | 半導体光電陰極およびこれを用いた半導体光電陰極装置 |
FR2758888B1 (fr) * | 1997-01-27 | 1999-04-23 | Thomson Csf | Procede de modelisation fine du fouillis de sol recu par un radar |
FR2777112B1 (fr) | 1998-04-07 | 2000-06-16 | Thomson Tubes Electroniques | Dispositif de conversion d'une image |
CN107895681B (zh) * | 2017-12-06 | 2024-07-12 | 中国电子科技集团公司第十二研究所 | 一种光电阴极及其制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7019039A (fr) * | 1970-01-19 | 1971-07-21 | ||
FR2116866A5 (fr) * | 1970-12-10 | 1972-07-21 | Electronique & Physique | Dispositif analyseur d'images a heterojonction |
US3958143A (en) * | 1973-01-15 | 1976-05-18 | Varian Associates | Long-wavelength photoemission cathode |
US4063269A (en) * | 1976-01-09 | 1977-12-13 | Hamamatsu Terebi Kabushiki Kaisha | Semiconductor photoelectron emission device |
US4587456A (en) * | 1984-01-17 | 1986-05-06 | Hitachi, Ltd. | Image pickup tube target |
-
1985
- 1985-11-29 FR FR8517719A patent/FR2591033B1/fr not_active Expired
-
1986
- 1986-11-24 US US06/934,481 patent/US4749903A/en not_active Expired - Fee Related
- 1986-11-25 EP EP86402618A patent/EP0228323B1/fr not_active Expired - Lifetime
- 1986-11-25 DE DE8686402618T patent/DE3670176D1/de not_active Expired - Fee Related
- 1986-11-28 JP JP61284112A patent/JPS62133634A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE3670176D1 (de) | 1990-05-10 |
EP0228323B1 (fr) | 1990-04-04 |
FR2591033A1 (fr) | 1987-06-05 |
EP0228323A1 (fr) | 1987-07-08 |
US4749903A (en) | 1988-06-07 |
JPS62133634A (ja) | 1987-06-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |