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FR2589630B1 - Absorbant saturable a tres faibles temps de commutation - Google Patents

Absorbant saturable a tres faibles temps de commutation

Info

Publication number
FR2589630B1
FR2589630B1 FR8511234A FR8511234A FR2589630B1 FR 2589630 B1 FR2589630 B1 FR 2589630B1 FR 8511234 A FR8511234 A FR 8511234A FR 8511234 A FR8511234 A FR 8511234A FR 2589630 B1 FR2589630 B1 FR 2589630B1
Authority
FR
France
Prior art keywords
switching times
low switching
saturable absorbent
saturable
absorbent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8511234A
Other languages
English (en)
Other versions
FR2589630A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR8511234A priority Critical patent/FR2589630B1/fr
Priority to US06/883,818 priority patent/US4720309A/en
Publication of FR2589630A1 publication Critical patent/FR2589630A1/fr
Application granted granted Critical
Publication of FR2589630B1 publication Critical patent/FR2589630B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/1061—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a variable absorption device
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3523—Non-linear absorption changing by light, e.g. bleaching
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • G02F3/02—Optical bistable devices
    • G02F3/026—Optical bistable devices based on laser effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/16—Superlattice

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
FR8511234A 1985-07-23 1985-07-23 Absorbant saturable a tres faibles temps de commutation Expired FR2589630B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR8511234A FR2589630B1 (fr) 1985-07-23 1985-07-23 Absorbant saturable a tres faibles temps de commutation
US06/883,818 US4720309A (en) 1985-07-23 1986-07-09 Saturatable absorbant with very short switching times

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8511234A FR2589630B1 (fr) 1985-07-23 1985-07-23 Absorbant saturable a tres faibles temps de commutation

Publications (2)

Publication Number Publication Date
FR2589630A1 FR2589630A1 (fr) 1987-05-07
FR2589630B1 true FR2589630B1 (fr) 1988-06-17

Family

ID=9321543

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8511234A Expired FR2589630B1 (fr) 1985-07-23 1985-07-23 Absorbant saturable a tres faibles temps de commutation

Country Status (2)

Country Link
US (1) US4720309A (fr)
FR (1) FR2589630B1 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0821708B2 (ja) * 1985-11-14 1996-03-04 株式会社豊田中央研究所 半導体素子
US5047822A (en) * 1988-03-24 1991-09-10 Martin Marietta Corporation Electro-optic quantum well device
US5185647A (en) * 1988-12-12 1993-02-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Long wavelength infrared detector
CA1299719C (fr) * 1989-01-13 1992-04-28 Hui Chun Liu Source infrarouge a super-reseau semiconducteur
US5132981A (en) * 1989-05-31 1992-07-21 Hitachi, Ltd. Semiconductor optical device
US5005176A (en) * 1990-04-04 1991-04-02 Hughes Aircraft Company Method and apparatus for Q-switching a laser
US5031190A (en) * 1990-05-17 1991-07-09 Cornell Research Foundation, Inc. Optical logic using semiconductor ring lasers
US5132983A (en) * 1990-05-17 1992-07-21 Cornell Research Foundation, Inc. Optical logic using semiconductor ring lasers
US5160993A (en) * 1990-06-06 1992-11-03 Fujitsu Limited High speed optosemiconductor device having multiple quantum wells
US5965899A (en) * 1990-10-31 1999-10-12 Lockheed Martin Corp. Miniband transport quantum well detector
DE69120518T2 (de) * 1990-12-20 1996-10-24 Fujitsu Ltd Nichtlineare optische Vorrichtung mit verbesserter Erholungsrate
US5132746A (en) * 1991-01-04 1992-07-21 International Business Machines Corporation Biaxial-stress barrier shifts in pseudomorphic tunnel devices
DE69211737T2 (de) * 1991-03-27 1996-10-31 Fujitsu Ltd Nichtlineare halbleitende optische Vorrichtung mit verbessertem Signal-Rausch-Verhältnis
US5237577A (en) * 1991-11-06 1993-08-17 At&T Bell Laboratories Monolithically integrated fabry-perot saturable absorber
US5345454A (en) * 1991-11-06 1994-09-06 At&T Bell Laboratories Antiresonant Fabry-Perot p-i-n modulator
US5265107A (en) * 1992-02-05 1993-11-23 Bell Communications Research, Inc. Broadband absorber having multiple quantum wells of different thicknesses
US5278855A (en) * 1992-05-11 1994-01-11 At&T Bell Laboratories Broadband semiconductor saturable absorber
US5374831A (en) * 1993-04-14 1994-12-20 The United States Of America As Represented By The Secretary Of The Army Quantum well phonon modulator
US5421910A (en) * 1994-02-10 1995-06-06 Northwestern University Intermetallic compound semiconductor thin film
WO1995029426A1 (fr) * 1994-04-26 1995-11-02 Telefonaktiebolaget Lm Ericsson Absorbeur optique a super reseau
US5410178A (en) * 1994-08-22 1995-04-25 Northwestern University Semiconductor films
US5668395A (en) * 1994-11-22 1997-09-16 Northwestern University Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors
US5650635A (en) * 1995-07-14 1997-07-22 Northwestern University Multiple stacked Sb-based heterostructures

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3993963A (en) * 1974-06-20 1976-11-23 Bell Telephone Laboratories, Incorporated Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same
US4205329A (en) * 1976-03-29 1980-05-27 Bell Telephone Laboratories, Incorporated Periodic monolayer semiconductor structures grown by molecular beam epitaxy
US4163237A (en) * 1978-04-24 1979-07-31 Bell Telephone Laboratories, Incorporated High mobility multilayered heterojunction devices employing modulated doping
US4205331A (en) * 1978-06-09 1980-05-27 The United States Of America As Represented By The Secretary Of The Army Infrared optical devices of layered structure
JPS57176785A (en) * 1981-04-22 1982-10-30 Hitachi Ltd Semiconductor laser device
US4450463A (en) * 1981-06-29 1984-05-22 Rockwell International Corporation Multiple-quantum-layer photodetector
US4553317A (en) * 1981-11-09 1985-11-19 Canon Kabushiki Kaisha Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors
JPS58207684A (ja) * 1982-05-28 1983-12-03 Nippon Telegr & Teleph Corp <Ntt> ダブルヘテロ接合型半導体発光装置
JPS59104189A (ja) * 1982-12-07 1984-06-15 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザ
JPS5929484A (ja) * 1982-08-12 1984-02-16 Fujitsu Ltd 半導体発光装置
NL8301215A (nl) * 1983-04-07 1984-11-01 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
EP0133342B1 (fr) * 1983-06-24 1989-11-29 Nec Corporation Structure de semi-conducteur avec supraréseau à haute densité de porteurs de charge
US4546480A (en) * 1983-08-19 1985-10-08 Xerox Corporation Injection lasers with quantum size effect transparent waveguiding
US4637122A (en) * 1983-09-19 1987-01-20 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
JPS60145678A (ja) * 1984-01-10 1985-08-01 Toshiba Corp 低温真空断熱配管

Also Published As

Publication number Publication date
FR2589630A1 (fr) 1987-05-07
US4720309A (en) 1988-01-19

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Legal Events

Date Code Title Description
TP Transmission of property
TP Transmission of property
ST Notification of lapse