FR2541513B1 - Thyristor auto-protege et son procede de fabrication - Google Patents
Thyristor auto-protege et son procede de fabricationInfo
- Publication number
- FR2541513B1 FR2541513B1 FR8402233A FR8402233A FR2541513B1 FR 2541513 B1 FR2541513 B1 FR 2541513B1 FR 8402233 A FR8402233 A FR 8402233A FR 8402233 A FR8402233 A FR 8402233A FR 2541513 B1 FR2541513 B1 FR 2541513B1
- Authority
- FR
- France
- Prior art keywords
- self
- manufacturing
- protected thyristor
- thyristor
- protected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/468,016 US4514898A (en) | 1983-02-18 | 1983-02-18 | Method of making a self protected thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2541513A1 FR2541513A1 (fr) | 1984-08-24 |
| FR2541513B1 true FR2541513B1 (fr) | 1987-01-16 |
Family
ID=23858093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8402233A Expired FR2541513B1 (fr) | 1983-02-18 | 1984-02-14 | Thyristor auto-protege et son procede de fabrication |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4514898A (fr) |
| JP (1) | JPS59158561A (fr) |
| BE (1) | BE898948A (fr) |
| BR (1) | BR8400664A (fr) |
| CA (1) | CA1207086A (fr) |
| DE (1) | DE3405549C2 (fr) |
| FR (1) | FR2541513B1 (fr) |
| GB (1) | GB2135514B (fr) |
| IE (1) | IE55503B1 (fr) |
| IN (1) | IN162342B (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH670333A5 (fr) * | 1986-04-30 | 1989-05-31 | Bbc Brown Boveri & Cie | |
| JPS63260078A (ja) * | 1987-04-17 | 1988-10-27 | Hitachi Ltd | 過電圧自己保護型サイリスタ |
| JPH01136369A (ja) * | 1987-11-21 | 1989-05-29 | Toshiba Corp | 過電圧保護機能付半導体装置の製造方法 |
| US4904609A (en) * | 1988-05-06 | 1990-02-27 | General Electric Company | Method of making symmetrical blocking high voltage breakdown semiconductor device |
| US5204273A (en) * | 1990-08-20 | 1993-04-20 | Siemens Aktiengesellschaft | Method for the manufacturing of a thyristor with defined lateral resistor |
| US5645711A (en) * | 1996-01-05 | 1997-07-08 | Conoco Inc. | Process for upgrading the flash zone gas oil stream from a delayed coker |
| US20020170897A1 (en) * | 2001-05-21 | 2002-11-21 | Hall Frank L. | Methods for preparing ball grid array substrates via use of a laser |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2238564C3 (de) * | 1972-08-04 | 1981-02-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| US4047219A (en) * | 1975-11-03 | 1977-09-06 | General Electric Company | Radiation sensitive thyristor structure with isolated detector |
| US4176371A (en) * | 1976-01-09 | 1979-11-27 | Westinghouse Electric Corp. | Thyristor fired by overvoltage |
| US4087834A (en) * | 1976-03-22 | 1978-05-02 | General Electric Company | Self-protecting semiconductor device |
| DE2928685A1 (de) * | 1978-07-20 | 1980-01-31 | Electric Power Res Inst | Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor |
| US4261000A (en) * | 1980-05-23 | 1981-04-07 | General Electric Company | High voltage semiconductor device having an improved dv/dt capability |
| JPS5785259A (en) * | 1980-11-17 | 1982-05-27 | Hitachi Ltd | Light drive type thyristor |
| IE54111B1 (en) * | 1982-03-11 | 1989-06-21 | Westinghouse Electric Corp | Laser treatment of thyristor to provide overvoltage self-protection |
-
1983
- 1983-02-18 US US06/468,016 patent/US4514898A/en not_active Expired - Fee Related
-
1984
- 1984-02-02 GB GB08402718A patent/GB2135514B/en not_active Expired
- 1984-02-02 IE IE247/84A patent/IE55503B1/en unknown
- 1984-02-09 CA CA000447085A patent/CA1207086A/fr not_active Expired
- 1984-02-09 IN IN98/CAL/84A patent/IN162342B/en unknown
- 1984-02-14 FR FR8402233A patent/FR2541513B1/fr not_active Expired
- 1984-02-15 BR BR8400664A patent/BR8400664A/pt unknown
- 1984-02-16 DE DE3405549A patent/DE3405549C2/de not_active Expired - Fee Related
- 1984-02-17 JP JP59027397A patent/JPS59158561A/ja active Pending
- 1984-02-17 BE BE0/212420A patent/BE898948A/fr not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB8402718D0 (en) | 1984-03-07 |
| BE898948A (fr) | 1984-08-17 |
| FR2541513A1 (fr) | 1984-08-24 |
| GB2135514B (en) | 1986-08-28 |
| IE840247L (en) | 1984-08-18 |
| BR8400664A (pt) | 1984-09-25 |
| DE3405549A1 (de) | 1984-08-23 |
| IN162342B (fr) | 1988-05-07 |
| US4514898A (en) | 1985-05-07 |
| JPS59158561A (ja) | 1984-09-08 |
| DE3405549C2 (de) | 1994-05-11 |
| IE55503B1 (en) | 1990-10-10 |
| GB2135514A (en) | 1984-08-30 |
| CA1207086A (fr) | 1986-07-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |