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FR2526586B1 - DEEP GRID FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD - Google Patents

DEEP GRID FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD

Info

Publication number
FR2526586B1
FR2526586B1 FR8207755A FR8207755A FR2526586B1 FR 2526586 B1 FR2526586 B1 FR 2526586B1 FR 8207755 A FR8207755 A FR 8207755A FR 8207755 A FR8207755 A FR 8207755A FR 2526586 B1 FR2526586 B1 FR 2526586B1
Authority
FR
France
Prior art keywords
manufacturing
field effect
effect transistor
grid field
deep grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8207755A
Other languages
French (fr)
Other versions
FR2526586A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EFCIS
Original Assignee
EFCIS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EFCIS filed Critical EFCIS
Priority to FR8207755A priority Critical patent/FR2526586B1/en
Publication of FR2526586A1 publication Critical patent/FR2526586A1/en
Application granted granted Critical
Publication of FR2526586B1 publication Critical patent/FR2526586B1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
FR8207755A 1982-05-04 1982-05-04 DEEP GRID FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD Expired FR2526586B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8207755A FR2526586B1 (en) 1982-05-04 1982-05-04 DEEP GRID FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8207755A FR2526586B1 (en) 1982-05-04 1982-05-04 DEEP GRID FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD

Publications (2)

Publication Number Publication Date
FR2526586A1 FR2526586A1 (en) 1983-11-10
FR2526586B1 true FR2526586B1 (en) 1985-11-08

Family

ID=9273720

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8207755A Expired FR2526586B1 (en) 1982-05-04 1982-05-04 DEEP GRID FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD

Country Status (1)

Country Link
FR (1) FR2526586B1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4835585A (en) * 1984-11-26 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench gate structures
US4685196A (en) * 1985-07-29 1987-08-11 Industrial Technology Research Institute Method for making planar FET having gate, source and drain in the same plane
JP2994670B2 (en) 1989-12-02 1999-12-27 忠弘 大見 Semiconductor device and manufacturing method thereof
JP2948985B2 (en) * 1992-06-12 1999-09-13 三菱電機株式会社 Semiconductor device
US6066952A (en) * 1997-09-25 2000-05-23 International Business Machnies Corporation Method for polysilicon crystalline line width measurement post etch in undoped-poly process
US5945707A (en) * 1998-04-07 1999-08-31 International Business Machines Corporation DRAM cell with grooved transfer device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4243997A (en) * 1976-03-25 1981-01-06 Tokyo Shibaura Electric Co., Ltd. Semiconductor device
US4324038A (en) * 1980-11-24 1982-04-13 Bell Telephone Laboratories, Incorporated Method of fabricating MOS field effect transistors

Also Published As

Publication number Publication date
FR2526586A1 (en) 1983-11-10

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