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FR2526584B1 - - Google Patents

Info

Publication number
FR2526584B1
FR2526584B1 FR8207752A FR8207752A FR2526584B1 FR 2526584 B1 FR2526584 B1 FR 2526584B1 FR 8207752 A FR8207752 A FR 8207752A FR 8207752 A FR8207752 A FR 8207752A FR 2526584 B1 FR2526584 B1 FR 2526584B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8207752A
Other languages
French (fr)
Other versions
FR2526584A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8207752A priority Critical patent/FR2526584A1/fr
Publication of FR2526584A1 publication Critical patent/FR2526584A1/fr
Application granted granted Critical
Publication of FR2526584B1 publication Critical patent/FR2526584B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/061Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4821Bridge structure with air gap
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR8207752A 1982-05-04 1982-05-04 Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres Granted FR2526584A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8207752A FR2526584A1 (fr) 1982-05-04 1982-05-04 Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8207752A FR2526584A1 (fr) 1982-05-04 1982-05-04 Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres

Publications (2)

Publication Number Publication Date
FR2526584A1 FR2526584A1 (fr) 1983-11-10
FR2526584B1 true FR2526584B1 (da) 1984-09-14

Family

ID=9273717

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8207752A Granted FR2526584A1 (fr) 1982-05-04 1982-05-04 Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres

Country Status (1)

Country Link
FR (1) FR2526584A1 (da)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019877A (en) * 1989-08-31 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Field effect transistor
JPH03148838A (ja) * 1989-11-06 1991-06-25 Sumitomo Electric Ind Ltd マイクロ波半導体装置
US5168329A (en) * 1989-11-06 1992-12-01 Sumitomo Electric Industries, Ltd. Microwave semiconductor device capable of controlling a threshold voltage
US5070376A (en) * 1990-01-05 1991-12-03 Sumitomo Electric Industries, Ltd. Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2535156C3 (de) * 1975-08-06 1978-08-31 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Schicht mit vorgegebenem Muster von Bereichen geringerer Schichtdicke und Verwendung der Schicht als Maske bei der Dotierung
US4054484A (en) * 1975-10-23 1977-10-18 Bell Telephone Laboratories, Incorporated Method of forming crossover connections
US4213840A (en) * 1978-11-13 1980-07-22 Avantek, Inc. Low-resistance, fine-line semiconductor device and the method for its manufacture
US4283483A (en) * 1979-07-19 1981-08-11 Hughes Aircraft Company Process for forming semiconductor devices using electron-sensitive resist patterns with controlled line profiles

Also Published As

Publication number Publication date
FR2526584A1 (fr) 1983-11-10

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Legal Events

Date Code Title Description
ST Notification of lapse