FR2526584B1 - - Google Patents
Info
- Publication number
- FR2526584B1 FR2526584B1 FR8207752A FR8207752A FR2526584B1 FR 2526584 B1 FR2526584 B1 FR 2526584B1 FR 8207752 A FR8207752 A FR 8207752A FR 8207752 A FR8207752 A FR 8207752A FR 2526584 B1 FR2526584 B1 FR 2526584B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/061—Manufacture or treatment of FETs having Schottky gates
- H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/4821—Bridge structure with air gap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8207752A FR2526584A1 (fr) | 1982-05-04 | 1982-05-04 | Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8207752A FR2526584A1 (fr) | 1982-05-04 | 1982-05-04 | Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2526584A1 FR2526584A1 (fr) | 1983-11-10 |
FR2526584B1 true FR2526584B1 (da) | 1984-09-14 |
Family
ID=9273717
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8207752A Granted FR2526584A1 (fr) | 1982-05-04 | 1982-05-04 | Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2526584A1 (da) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5019877A (en) * | 1989-08-31 | 1991-05-28 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor |
JPH03148838A (ja) * | 1989-11-06 | 1991-06-25 | Sumitomo Electric Ind Ltd | マイクロ波半導体装置 |
US5168329A (en) * | 1989-11-06 | 1992-12-01 | Sumitomo Electric Industries, Ltd. | Microwave semiconductor device capable of controlling a threshold voltage |
US5070376A (en) * | 1990-01-05 | 1991-12-03 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2535156C3 (de) * | 1975-08-06 | 1978-08-31 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer Schicht mit vorgegebenem Muster von Bereichen geringerer Schichtdicke und Verwendung der Schicht als Maske bei der Dotierung |
US4054484A (en) * | 1975-10-23 | 1977-10-18 | Bell Telephone Laboratories, Incorporated | Method of forming crossover connections |
US4213840A (en) * | 1978-11-13 | 1980-07-22 | Avantek, Inc. | Low-resistance, fine-line semiconductor device and the method for its manufacture |
US4283483A (en) * | 1979-07-19 | 1981-08-11 | Hughes Aircraft Company | Process for forming semiconductor devices using electron-sensitive resist patterns with controlled line profiles |
-
1982
- 1982-05-04 FR FR8207752A patent/FR2526584A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2526584A1 (fr) | 1983-11-10 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |