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FR2516308B1 - Plateau d'attaque radiofrequence, notamment pour l'attaque par pulverisation cathodique de tranches semi-conductrices - Google Patents

Plateau d'attaque radiofrequence, notamment pour l'attaque par pulverisation cathodique de tranches semi-conductrices

Info

Publication number
FR2516308B1
FR2516308B1 FR8218996A FR8218996A FR2516308B1 FR 2516308 B1 FR2516308 B1 FR 2516308B1 FR 8218996 A FR8218996 A FR 8218996A FR 8218996 A FR8218996 A FR 8218996A FR 2516308 B1 FR2516308 B1 FR 2516308B1
Authority
FR
France
Prior art keywords
attack
radio frequency
semiconductor wafers
cathode spray
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8218996A
Other languages
English (en)
Other versions
FR2516308A1 (fr
Inventor
David James Harra
Frederick Thomas Turner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of FR2516308A1 publication Critical patent/FR2516308A1/fr
Application granted granted Critical
Publication of FR2516308B1 publication Critical patent/FR2516308B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
FR8218996A 1981-11-12 1982-11-12 Plateau d'attaque radiofrequence, notamment pour l'attaque par pulverisation cathodique de tranches semi-conductrices Expired FR2516308B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/320,385 US4392938A (en) 1981-11-12 1981-11-12 Radio frequency etch table with biased extension member

Publications (2)

Publication Number Publication Date
FR2516308A1 FR2516308A1 (fr) 1983-05-13
FR2516308B1 true FR2516308B1 (fr) 1988-12-23

Family

ID=23246176

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8218996A Expired FR2516308B1 (fr) 1981-11-12 1982-11-12 Plateau d'attaque radiofrequence, notamment pour l'attaque par pulverisation cathodique de tranches semi-conductrices

Country Status (6)

Country Link
US (1) US4392938A (fr)
JP (1) JPS5889826A (fr)
DE (1) DE3241391A1 (fr)
FR (1) FR2516308B1 (fr)
GB (1) GB2109282B (fr)
IT (1) IT1153022B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473455A (en) * 1981-12-21 1984-09-25 At&T Bell Laboratories Wafer holding apparatus and method
JPS60213026A (ja) * 1984-04-09 1985-10-25 Kokusai Electric Co Ltd ドライエツチング装置
DE3835153A1 (de) * 1988-10-15 1990-04-26 Leybold Ag Vorrichtung zum aetzen von substraten durch eine glimmentladung
DE3900768C1 (en) * 1989-01-12 1990-02-22 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Plasma etching device and method for operating it
US5102496A (en) * 1989-09-26 1992-04-07 Applied Materials, Inc. Particulate contamination prevention using low power plasma
US5498313A (en) * 1993-08-20 1996-03-12 International Business Machines Corp. Symmetrical etching ring with gas control
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
CN105977126B (zh) * 2011-05-31 2018-12-07 应用材料公司 用于等离子体蚀刻腔室的孔部件
US11049701B2 (en) 2016-11-26 2021-06-29 Applied Materials, Inc. Biased cover ring for a substrate processing system
US10879052B2 (en) * 2018-11-21 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma processing apparatus and manufacturing method using the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB736512A (en) * 1952-08-25 1955-09-07 Edwards & Co London Ltd W Improvements in or relating to cathode sputtering apparatus
FR2082505A5 (fr) * 1970-03-18 1971-12-10 Radiotechnique Compelec
JPS53123669A (en) * 1977-04-05 1978-10-28 Fujitsu Ltd Wafer holding method
US4261762A (en) * 1979-09-14 1981-04-14 Eaton Corporation Method for conducting heat to or from an article being treated under vacuum
US4297162A (en) * 1979-10-17 1981-10-27 Texas Instruments Incorporated Plasma etching using improved electrode
JPS5687672A (en) * 1979-12-15 1981-07-16 Anelva Corp Dry etching apparatus
JPS5687671A (en) * 1979-12-15 1981-07-16 Anelva Corp Dry etching apparatus
JPS5694745A (en) * 1979-12-28 1981-07-31 Sony Corp Plasma treatment device
JPS5796530A (en) * 1980-12-09 1982-06-15 Nec Corp Lasma etching device
JPS57149734A (en) * 1981-03-12 1982-09-16 Anelva Corp Plasma applying working device

Also Published As

Publication number Publication date
GB2109282B (en) 1985-09-04
DE3241391A1 (de) 1983-05-19
IT8224237A0 (it) 1982-11-12
IT1153022B (it) 1987-01-14
GB2109282A (en) 1983-06-02
JPS5889826A (ja) 1983-05-28
FR2516308A1 (fr) 1983-05-13
US4392938A (en) 1983-07-12

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Legal Events

Date Code Title Description
ST Notification of lapse