FR2488731B3 - - Google Patents
Info
- Publication number
- FR2488731B3 FR2488731B3 FR8115738A FR8115738A FR2488731B3 FR 2488731 B3 FR2488731 B3 FR 2488731B3 FR 8115738 A FR8115738 A FR 8115738A FR 8115738 A FR8115738 A FR 8115738A FR 2488731 B3 FR2488731 B3 FR 2488731B3
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
- H01L21/67316—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
- C30B31/103—Mechanisms for moving either the charge or heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Packaging Frangible Articles (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19808021868 DE8021868U1 (de) | 1980-08-16 | 1980-08-16 | Traegerhorde fuer halbleiterscheiben |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2488731A1 FR2488731A1 (fr) | 1982-02-19 |
| FR2488731B3 true FR2488731B3 (es) | 1983-06-10 |
Family
ID=6718055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8115738A Granted FR2488731A1 (fr) | 1980-08-16 | 1981-08-14 | Claie support pour plaquettes semi-conductrices |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5737826A (es) |
| DE (1) | DE8021868U1 (es) |
| FR (1) | FR2488731A1 (es) |
| GB (1) | GB2082388B (es) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5844836U (ja) * | 1981-09-21 | 1983-03-25 | 日本電気ホームエレクトロニクス株式会社 | 半導体製造治具 |
| EP0100539A3 (en) * | 1982-07-30 | 1985-05-22 | Tecnisco Ltd. | Assembled device for supporting semiconductor wafers or the like |
| DE3419866C2 (de) * | 1984-05-28 | 1986-06-26 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Trägerhorde aus Quarzglas für scheibenförmige Substrate |
| DE3440111C1 (de) * | 1984-11-02 | 1986-05-15 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Traegerhorde |
| DE3441887C1 (de) * | 1984-11-16 | 1985-10-17 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Ofen fuer die Waermebehandlung von Halbleiter-Substraten |
| EP0267462A3 (en) * | 1986-11-12 | 1990-01-31 | Heraeus Amersil, Inc. | Mass transferable semiconductor substrate processing and handling full shell carrier (boat) |
| DE3829159A1 (de) * | 1988-08-27 | 1990-03-08 | Westdeutsche Quarzschmelze Gmb | Vorrichtung zur aufnahme von halbleiterscheibchen |
| DE69529333T2 (de) * | 1994-08-31 | 2004-01-15 | Heraeus Quarzglas | Verfahren zur herstellung einer quarzglas-haltevorrichtung zur wärmebehandlung von silizium-wafern |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5068775A (es) * | 1973-10-19 | 1975-06-09 | ||
| JPS53133366A (en) * | 1977-04-27 | 1978-11-21 | Nec Corp | Impurity diffusion method |
-
1980
- 1980-08-16 DE DE19808021868 patent/DE8021868U1/de not_active Expired
-
1981
- 1981-04-20 JP JP5866081A patent/JPS5737826A/ja active Granted
- 1981-08-14 FR FR8115738A patent/FR2488731A1/fr active Granted
- 1981-08-14 GB GB8124972A patent/GB2082388B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5737826A (en) | 1982-03-02 |
| GB2082388A (en) | 1982-03-03 |
| JPS6141128B2 (es) | 1986-09-12 |
| GB2082388B (en) | 1984-05-23 |
| DE8021868U1 (de) | 1981-01-29 |
| FR2488731A1 (fr) | 1982-02-19 |