FR2440568A1 - Photo-template having increased service-life - contains photoresist top layer doped with boron, phosphorus or antimony ions - Google Patents
Photo-template having increased service-life - contains photoresist top layer doped with boron, phosphorus or antimony ionsInfo
- Publication number
- FR2440568A1 FR2440568A1 FR7924060A FR7924060A FR2440568A1 FR 2440568 A1 FR2440568 A1 FR 2440568A1 FR 7924060 A FR7924060 A FR 7924060A FR 7924060 A FR7924060 A FR 7924060A FR 2440568 A1 FR2440568 A1 FR 2440568A1
- Authority
- FR
- France
- Prior art keywords
- photo
- life
- reduced
- boron
- template
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052796 boron Inorganic materials 0.000 title abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 title abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title 1
- 229910001439 antimony ion Inorganic materials 0.000 title 1
- 239000011574 phosphorus Substances 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 2
- 150000004706 metal oxides Chemical class 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000001093 holography Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Glass Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A photo-temphate contains an additional doped photoresist layer (A), on the metal- or metal oxide layer topology applied to a transparent substrate. Pref. doping ions are B, P or Sb. The templates are used in (i) semiconductor industry, in prodn. of semiconductor components, esp. of integrated circuits and high frequency appts., (ii) holography, in the prodn. of optical instruments, precision parts for watch industry and in printed circuitry. The additional layer (A) increased template service-life 4-6 x, e.g. to 600 copies. "Breakdown"-caused defects are reduced from 5-7% to 1-2%. Reflection capacity is reduced from 50-60%, on using a Cr layer, to 5-7%. Optical density is increased to 2.2-3 units, whereby exposure time can be reduced. Static surface-charging is prevented.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU782675175A SU938338A1 (en) | 1978-10-30 | 1978-10-30 | Mask and method of manufacturing thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2440568A1 true FR2440568A1 (en) | 1980-05-30 |
Family
ID=20789759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7924060A Pending FR2440568A1 (en) | 1978-10-30 | 1979-09-27 | Photo-template having increased service-life - contains photoresist top layer doped with boron, phosphorus or antimony ions |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5560946A (en) |
CS (1) | CS215215B1 (en) |
DD (1) | DD148177A3 (en) |
DE (1) | DE2930416C2 (en) |
FR (1) | FR2440568A1 (en) |
SU (1) | SU938338A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2585205A1 (en) * | 1985-07-19 | 1987-01-23 | Philips Nv | Circuit for TV receiver with controllable IF video signal amplifier |
EP0706088A1 (en) * | 1990-05-09 | 1996-04-10 | Canon Kabushiki Kaisha | Photomask for use in etching patterns |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19721524A1 (en) * | 1997-05-22 | 1998-11-26 | Hsm Gmbh | Method of making an embossing cylinder |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3622319A (en) * | 1966-10-20 | 1971-11-23 | Western Electric Co | Nonreflecting photomasks and methods of making same |
-
1978
- 1978-10-30 SU SU782675175A patent/SU938338A1/en active
-
1979
- 1979-07-26 DE DE19792930416 patent/DE2930416C2/en not_active Expired
- 1979-08-21 JP JP10562179A patent/JPS5560946A/en active Pending
- 1979-09-27 FR FR7924060A patent/FR2440568A1/en active Pending
- 1979-10-18 CS CS708579A patent/CS215215B1/en unknown
- 1979-10-26 DD DD21649479A patent/DD148177A3/en not_active IP Right Cessation
Non-Patent Citations (3)
Title |
---|
ABJP/77 * |
EXBK/70 * |
EXBK/72 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2585205A1 (en) * | 1985-07-19 | 1987-01-23 | Philips Nv | Circuit for TV receiver with controllable IF video signal amplifier |
EP0706088A1 (en) * | 1990-05-09 | 1996-04-10 | Canon Kabushiki Kaisha | Photomask for use in etching patterns |
Also Published As
Publication number | Publication date |
---|---|
SU938338A1 (en) | 1982-06-23 |
DE2930416A1 (en) | 1980-05-14 |
DE2930416C2 (en) | 1982-05-13 |
CS215215B1 (en) | 1982-08-27 |
DD148177A3 (en) | 1981-05-13 |
JPS5560946A (en) | 1980-05-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2440568A1 (en) | Photo-template having increased service-life - contains photoresist top layer doped with boron, phosphorus or antimony ions | |
FR1596843A (en) | ||
EP0517923A4 (en) | Method of forming minute resist pattern | |
JPS5294782A (en) | Insulation gate type ic | |
JPS5616129A (en) | Pattern forming method | |
JPS6421450A (en) | Production of mask | |
JPS5367454A (en) | Integrated light circuit and its production | |
JPS5610944A (en) | Division of semiconductor device | |
ATE53682T1 (en) | PROCESSES FOR MANUFACTURING LARGE AREA INTEGRATED CIRCUITS. | |
JPS5574544A (en) | Photo mask correcting method | |
JPS52139377A (en) | Production of semiconductor device | |
JPS5322369A (en) | Flaw mending method of photo mask materials | |
JPS5578531A (en) | Semiconductor substrate | |
JPS5797629A (en) | Manufacture of semiconductor device | |
JPS5527637A (en) | Photo-resist-pattern forming method | |
JPS5748731A (en) | Manufacture of mask | |
JPS5791537A (en) | Manufacture of semiconductor device | |
JPS5678122A (en) | Formation of pattern | |
JPS5669814A (en) | Manufacture of magnetic bubble memory element | |
JPS57101837A (en) | Photomask | |
JPS5655046A (en) | Formation of resist pattern | |
JPS57118641A (en) | Lifting-off method | |
JPS56107582A (en) | Manufacture of semiconductor device | |
JPS56108880A (en) | Selectively etching method for silicon oxide film | |
JPS5299812A (en) | Photographic photosensitive material |