[go: up one dir, main page]

FR2440568A1 - Photo-template having increased service-life - contains photoresist top layer doped with boron, phosphorus or antimony ions - Google Patents

Photo-template having increased service-life - contains photoresist top layer doped with boron, phosphorus or antimony ions

Info

Publication number
FR2440568A1
FR2440568A1 FR7924060A FR7924060A FR2440568A1 FR 2440568 A1 FR2440568 A1 FR 2440568A1 FR 7924060 A FR7924060 A FR 7924060A FR 7924060 A FR7924060 A FR 7924060A FR 2440568 A1 FR2440568 A1 FR 2440568A1
Authority
FR
France
Prior art keywords
photo
life
reduced
boron
template
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7924060A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GUNINA NINA
Original Assignee
GUNINA NINA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GUNINA NINA filed Critical GUNINA NINA
Publication of FR2440568A1 publication Critical patent/FR2440568A1/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • G03F1/56Organic absorbers, e.g. of photo-resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • G03F1/58Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Glass Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A photo-temphate contains an additional doped photoresist layer (A), on the metal- or metal oxide layer topology applied to a transparent substrate. Pref. doping ions are B, P or Sb. The templates are used in (i) semiconductor industry, in prodn. of semiconductor components, esp. of integrated circuits and high frequency appts., (ii) holography, in the prodn. of optical instruments, precision parts for watch industry and in printed circuitry. The additional layer (A) increased template service-life 4-6 x, e.g. to 600 copies. "Breakdown"-caused defects are reduced from 5-7% to 1-2%. Reflection capacity is reduced from 50-60%, on using a Cr layer, to 5-7%. Optical density is increased to 2.2-3 units, whereby exposure time can be reduced. Static surface-charging is prevented.
FR7924060A 1978-10-30 1979-09-27 Photo-template having increased service-life - contains photoresist top layer doped with boron, phosphorus or antimony ions Pending FR2440568A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU782675175A SU938338A1 (en) 1978-10-30 1978-10-30 Mask and method of manufacturing thereof

Publications (1)

Publication Number Publication Date
FR2440568A1 true FR2440568A1 (en) 1980-05-30

Family

ID=20789759

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7924060A Pending FR2440568A1 (en) 1978-10-30 1979-09-27 Photo-template having increased service-life - contains photoresist top layer doped with boron, phosphorus or antimony ions

Country Status (6)

Country Link
JP (1) JPS5560946A (en)
CS (1) CS215215B1 (en)
DD (1) DD148177A3 (en)
DE (1) DE2930416C2 (en)
FR (1) FR2440568A1 (en)
SU (1) SU938338A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2585205A1 (en) * 1985-07-19 1987-01-23 Philips Nv Circuit for TV receiver with controllable IF video signal amplifier
EP0706088A1 (en) * 1990-05-09 1996-04-10 Canon Kabushiki Kaisha Photomask for use in etching patterns

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19721524A1 (en) * 1997-05-22 1998-11-26 Hsm Gmbh Method of making an embossing cylinder

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3622319A (en) * 1966-10-20 1971-11-23 Western Electric Co Nonreflecting photomasks and methods of making same

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ABJP/77 *
EXBK/70 *
EXBK/72 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2585205A1 (en) * 1985-07-19 1987-01-23 Philips Nv Circuit for TV receiver with controllable IF video signal amplifier
EP0706088A1 (en) * 1990-05-09 1996-04-10 Canon Kabushiki Kaisha Photomask for use in etching patterns

Also Published As

Publication number Publication date
SU938338A1 (en) 1982-06-23
DE2930416A1 (en) 1980-05-14
DE2930416C2 (en) 1982-05-13
CS215215B1 (en) 1982-08-27
DD148177A3 (en) 1981-05-13
JPS5560946A (en) 1980-05-08

Similar Documents

Publication Publication Date Title
FR2440568A1 (en) Photo-template having increased service-life - contains photoresist top layer doped with boron, phosphorus or antimony ions
FR1596843A (en)
EP0517923A4 (en) Method of forming minute resist pattern
JPS5294782A (en) Insulation gate type ic
JPS5616129A (en) Pattern forming method
JPS6421450A (en) Production of mask
JPS5367454A (en) Integrated light circuit and its production
JPS5610944A (en) Division of semiconductor device
ATE53682T1 (en) PROCESSES FOR MANUFACTURING LARGE AREA INTEGRATED CIRCUITS.
JPS5574544A (en) Photo mask correcting method
JPS52139377A (en) Production of semiconductor device
JPS5322369A (en) Flaw mending method of photo mask materials
JPS5578531A (en) Semiconductor substrate
JPS5797629A (en) Manufacture of semiconductor device
JPS5527637A (en) Photo-resist-pattern forming method
JPS5748731A (en) Manufacture of mask
JPS5791537A (en) Manufacture of semiconductor device
JPS5678122A (en) Formation of pattern
JPS5669814A (en) Manufacture of magnetic bubble memory element
JPS57101837A (en) Photomask
JPS5655046A (en) Formation of resist pattern
JPS57118641A (en) Lifting-off method
JPS56107582A (en) Manufacture of semiconductor device
JPS56108880A (en) Selectively etching method for silicon oxide film
JPS5299812A (en) Photographic photosensitive material