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FR2429496A1 - Cellule solaire comportant une couche de phosphure d'indium-gallium - Google Patents

Cellule solaire comportant une couche de phosphure d'indium-gallium

Info

Publication number
FR2429496A1
FR2429496A1 FR7915680A FR7915680A FR2429496A1 FR 2429496 A1 FR2429496 A1 FR 2429496A1 FR 7915680 A FR7915680 A FR 7915680A FR 7915680 A FR7915680 A FR 7915680A FR 2429496 A1 FR2429496 A1 FR 2429496A1
Authority
FR
France
Prior art keywords
layer
gallium arsenide
indium
solar cell
gallium phosphide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7915680A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2429496A1 publication Critical patent/FR2429496A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

Dispositif photovoltaïque qui comprend : un corps d'arséniure de gallium présentant un type de conductivité, et une couche d'arséniure de gallium d'un type de conductivité opposé à celui dudit corps, formant une jonction PN avec ledit corps d'arséniure de gallium, ce dispositif étant caractérisé en ce qu'il comporte en outre une couche de Inx Gal-x P du même type de conductivité que la couche d'arséniure de gallium et formant une hétérotransition avec la couche d'arséniure de gallium, l'épaisseur de ladite couche de Inx Ga1-x P étant choisie de façon à transmettre des photons ayant une longueur d'onde plus courte que la longueur d'onde de la bande interdite du Inx Gal-x P, et des moyens pour contacter électriquement le corps d'arséniure de gallium et ladite couche, d'Inx Gal-x P.
FR7915680A 1978-06-23 1979-06-19 Cellule solaire comportant une couche de phosphure d'indium-gallium Pending FR2429496A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/918,643 US4179308A (en) 1978-06-23 1978-06-23 Low cost high efficiency gallium arsenide homojunction solar cell incorporating a layer of indium gallium phosphide

Publications (1)

Publication Number Publication Date
FR2429496A1 true FR2429496A1 (fr) 1980-01-18

Family

ID=25440722

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7915680A Pending FR2429496A1 (fr) 1978-06-23 1979-06-19 Cellule solaire comportant une couche de phosphure d'indium-gallium

Country Status (5)

Country Link
US (1) US4179308A (fr)
JP (1) JPS554998A (fr)
DE (1) DE2924388A1 (fr)
FR (1) FR2429496A1 (fr)
GB (1) GB2023927B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
US4568792A (en) * 1984-02-02 1986-02-04 Sri International Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts
US4697202A (en) * 1984-02-02 1987-09-29 Sri International Integrated circuit having dislocation free substrate
US4544799A (en) * 1984-04-30 1985-10-01 University Of Delaware Window structure for passivating solar cells based on gallium arsenide
US5106766A (en) * 1989-07-11 1992-04-21 At&T Bell Laboratories Method of making a semiconductor device that comprises p-type III-V semiconductor material
US5001534A (en) * 1989-07-11 1991-03-19 At&T Bell Laboratories Heterojunction bipolar transistor
US5342453A (en) * 1992-11-13 1994-08-30 Midwest Research Institute Heterojunction solar cell
US5316593A (en) * 1992-11-16 1994-05-31 Midwest Research Institute Heterojunction solar cell with passivated emitter surface
USH1856H (en) * 1996-10-30 2000-09-05 The United States Of America As Represented By The United States Department Of Energy Lapped substrate for enhanced backsurface reflectivity in a thermophotovoltaic energy conversion system
EP2434128A1 (fr) 2010-09-22 2012-03-28 Siemens Aktiengesellschaft Système d'alimentation en huile pour une turbomachine stationnaire

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2302593A1 (fr) * 1975-02-27 1976-09-24 Varian Associates Cellule solaire constituee par un empilement de couches de l'une et l'autre conductivite

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821777A (en) * 1972-09-22 1974-06-28 Varian Associates Avalanche photodiode
US3852591A (en) * 1973-10-19 1974-12-03 Bell Telephone Labor Inc Graded bandgap semiconductor photodetector for equalization of optical fiber material delay distortion
US4017332A (en) * 1975-02-27 1977-04-12 Varian Associates Solar cells employing stacked opposite conductivity layers
US3993506A (en) * 1975-09-25 1976-11-23 Varian Associates Photovoltaic cell employing lattice matched quaternary passivating layer
US4070205A (en) * 1976-12-08 1978-01-24 The United States Of America As Represented By The Secretary Of The Air Force Aluminum arsenide eutectic gallium arsenide solar cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2302593A1 (fr) * 1975-02-27 1976-09-24 Varian Associates Cellule solaire constituee par un empilement de couches de l'une et l'autre conductivite

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON ELECTRON DEVICES, volume ED-24, no. 4, avril 1977 (NEW YORK, US) G.S. KAMATH et al. "Large-area high-efficiency (AlGa)As-GaAs solar cells", pages 473-475 *

Also Published As

Publication number Publication date
GB2023927B (en) 1982-05-19
JPS554998A (en) 1980-01-14
GB2023927A (en) 1980-01-03
US4179308A (en) 1979-12-18
DE2924388A1 (de) 1980-01-10

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