[go: up one dir, main page]

FR2382093A2 - PROCESS FOR THE MANUFACTURING OF COLLECTIVELY PASSIVE SEMICONDUCTOR DEVICES, AND DEVICES THUS OBTAINED - Google Patents

PROCESS FOR THE MANUFACTURING OF COLLECTIVELY PASSIVE SEMICONDUCTOR DEVICES, AND DEVICES THUS OBTAINED

Info

Publication number
FR2382093A2
FR2382093A2 FR7705255A FR7705255A FR2382093A2 FR 2382093 A2 FR2382093 A2 FR 2382093A2 FR 7705255 A FR7705255 A FR 7705255A FR 7705255 A FR7705255 A FR 7705255A FR 2382093 A2 FR2382093 A2 FR 2382093A2
Authority
FR
France
Prior art keywords
devices
collectively
grooves
diodes
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7705255A
Other languages
French (fr)
Other versions
FR2382093B2 (en
Inventor
Raymond Henry
Jean-Victor Bouvet
Michel Calligaro
Claude Carriere
Alain Chapard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7308561A external-priority patent/FR2220877A1/en
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7705255A priority Critical patent/FR2382093A2/en
Publication of FR2382093A2 publication Critical patent/FR2382093A2/en
Application granted granted Critical
Publication of FR2382093B2 publication Critical patent/FR2382093B2/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)

Abstract

L'addition porte sur des perfectionnements concernant notamment la fabrication de diodes << P-I-N >> passivées collectivement. Un premier perfectionnement concerne l'utilisation d'une couche épitaxiale épaisse et fortement dopée servant de substrat pendant le creusement des sillons 21, ledit substrat 3 étant ensuite rodé jusqu'au niveau des sillons pour séparer les diodes. Un deuxième perfectionnement concerne un tracé hexagonal des sillons donnant des arêtes moins aiguës favorisant la passivation. Application aux diodes à couche << I >> relativement épaisse.The addition relates to improvements relating in particular to the manufacture of collectively passivated "P-I-N" diodes. A first improvement relates to the use of a thick and heavily doped epitaxial layer serving as a substrate during the digging of the grooves 21, said substrate 3 then being lapped up to the level of the grooves to separate the diodes. A second improvement relates to a hexagonal outline of the grooves giving less sharp edges favoring passivation. Application to relatively thick "I" film diodes.

FR7705255A 1973-03-09 1977-02-23 PROCESS FOR THE MANUFACTURING OF COLLECTIVELY PASSIVE SEMICONDUCTOR DEVICES, AND DEVICES THUS OBTAINED Granted FR2382093A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7705255A FR2382093A2 (en) 1973-03-09 1977-02-23 PROCESS FOR THE MANUFACTURING OF COLLECTIVELY PASSIVE SEMICONDUCTOR DEVICES, AND DEVICES THUS OBTAINED

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7308561A FR2220877A1 (en) 1973-03-09 1973-03-09 PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation
FR7705255A FR2382093A2 (en) 1973-03-09 1977-02-23 PROCESS FOR THE MANUFACTURING OF COLLECTIVELY PASSIVE SEMICONDUCTOR DEVICES, AND DEVICES THUS OBTAINED

Publications (2)

Publication Number Publication Date
FR2382093A2 true FR2382093A2 (en) 1978-09-22
FR2382093B2 FR2382093B2 (en) 1980-10-24

Family

ID=34227829

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7705255A Granted FR2382093A2 (en) 1973-03-09 1977-02-23 PROCESS FOR THE MANUFACTURING OF COLLECTIVELY PASSIVE SEMICONDUCTOR DEVICES, AND DEVICES THUS OBTAINED

Country Status (1)

Country Link
FR (1) FR2382093A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0537306A4 (en) * 1990-11-05 1994-05-18 Harris Corp Process for forming extremely thin integrated circuit dice
EP0583625A3 (en) * 1992-07-17 1994-08-24 Lsi Logic Corp Method of increasing the layout efficiency of dies on a wafer, and increasing the ratio of i/o area to active area per die
WO2002049076A3 (en) * 2000-12-15 2002-11-14 Koninkl Philips Electronics Nv Semiconductor device layout

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0537306A4 (en) * 1990-11-05 1994-05-18 Harris Corp Process for forming extremely thin integrated circuit dice
EP0583625A3 (en) * 1992-07-17 1994-08-24 Lsi Logic Corp Method of increasing the layout efficiency of dies on a wafer, and increasing the ratio of i/o area to active area per die
WO2002049076A3 (en) * 2000-12-15 2002-11-14 Koninkl Philips Electronics Nv Semiconductor device layout

Also Published As

Publication number Publication date
FR2382093B2 (en) 1980-10-24

Similar Documents

Publication Publication Date Title
US4137107A (en) Method of manufacturing a semiconductor device utilizing selective masking, deposition and etching
FR2382093A2 (en) PROCESS FOR THE MANUFACTURING OF COLLECTIVELY PASSIVE SEMICONDUCTOR DEVICES, AND DEVICES THUS OBTAINED
GB1186945A (en) Improvements relating to Semiconductor Devices
JPS55113372A (en) Semiconductor device and its manufacture
JPS54152878A (en) Structure of semiconductor laser element and its manufacture
JPS5617071A (en) Semiconductor device
JPS5513957A (en) Semiconductor device
JPS5473585A (en) Gate turn-off thyristor
JPS562671A (en) Manufacture of semiconductor diaphragm
GB1495295A (en) Thyristor combined with monolithically integrated diode and method for producing it
US4963971A (en) Symmetrical power semiconductor device and method of fabrication
GB1062398A (en) Process of diffusion into semiconductor body and product thereof
JPS5797686A (en) Light emitting element pellet
GB1365465A (en) Semiconductor device manufacture
JPS52124887A (en) Solar battery
GB1467145A (en) Method of forming a wafer of semiconductor material and the wafer so formed
FR2362489A1 (en) PROCESS FOR MANUFACTURING A LOAD TRANSFER DEVICE AND DEVICE OBTAINED
GB1300186A (en) Method for passivating mesa pn junction structures
FR1454897A (en) Method for establishing contacts on semiconductor devices
JPS5633845A (en) Manufacture of semiconductor device
JPS5730366A (en) Schottky transistor and manufacture thereof
JPH01161782A (en) Light emitting diode
JPS55134963A (en) Composite semiconductor device and manufacture thereof
JPS54120588A (en) Gate turn-off thyristor
JPS57117283A (en) 3-5 group compound semiconductor device

Legal Events

Date Code Title Description
CL Concession to grant licences