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FR2377123A1 - INTEGRATED LOGIC CIRCUIT - Google Patents

INTEGRATED LOGIC CIRCUIT

Info

Publication number
FR2377123A1
FR2377123A1 FR7800244A FR7800244A FR2377123A1 FR 2377123 A1 FR2377123 A1 FR 2377123A1 FR 7800244 A FR7800244 A FR 7800244A FR 7800244 A FR7800244 A FR 7800244A FR 2377123 A1 FR2377123 A1 FR 2377123A1
Authority
FR
France
Prior art keywords
logic circuit
integrated logic
circuit
microelectronics
injecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7800244A
Other languages
French (fr)
Other versions
FR2377123B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAZARIAN ARTASHES
Original Assignee
NAZARIAN ARTASHES
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU772441385A external-priority patent/SU602055A1/en
Priority claimed from SU772537101A external-priority patent/SU646391A1/en
Application filed by NAZARIAN ARTASHES filed Critical NAZARIAN ARTASHES
Publication of FR2377123A1 publication Critical patent/FR2377123A1/en
Application granted granted Critical
Publication of FR2377123B1 publication Critical patent/FR2377123B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09414—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09418—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors in combination with bipolar transistors [BIFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

La présente invention concerne la microélectronique. Dans le circuit la grille 12 du transistor FET 8 est réalisée sous forme d'au moins un contact redresseur non injecteur. Application aux dispositifs numériques.The present invention relates to microelectronics. In the circuit, the gate 12 of the FET transistor 8 is produced in the form of at least one non-injecting rectifier contact. Application to digital devices.

FR7800244A 1977-01-06 1978-01-05 INTEGRATED LOGIC CIRCUIT Granted FR2377123A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SU772441385A SU602055A1 (en) 1977-01-06 1977-01-06 Integral logic element
SU772537101A SU646391A1 (en) 1977-11-01 1977-11-01 Field-effect transistor
SU2537006 1977-11-11

Publications (2)

Publication Number Publication Date
FR2377123A1 true FR2377123A1 (en) 1978-08-04
FR2377123B1 FR2377123B1 (en) 1980-05-16

Family

ID=27356306

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7800244A Granted FR2377123A1 (en) 1977-01-06 1978-01-05 INTEGRATED LOGIC CIRCUIT

Country Status (9)

Country Link
JP (1) JPS53108291A (en)
CH (1) CH616276A5 (en)
CS (1) CS199407B1 (en)
DD (1) DD136907A1 (en)
DE (1) DE2800335A1 (en)
FR (1) FR2377123A1 (en)
GB (1) GB1565918A (en)
NL (1) NL7800046A (en)
PL (1) PL119495B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5540051A (en) * 1978-09-12 1980-03-21 Mitsubishi Electric Corp T-joint and production thereof
JPS573651Y2 (en) * 1979-10-08 1982-01-22
GB2130790B (en) * 1982-10-26 1986-04-16 Plessey Co Plc Integrated injection logic device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2321796A1 (en) * 1973-04-30 1974-11-14 Licentia Gmbh FETs with higher limiting frequencies - produced using highly-doped zone in semi-insulating gallium arsenide substrate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5811102B2 (en) * 1975-12-09 1983-03-01 ザイダンホウジン ハンドウタイケンキユウシンコウカイ semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2321796A1 (en) * 1973-04-30 1974-11-14 Licentia Gmbh FETs with higher limiting frequencies - produced using highly-doped zone in semi-insulating gallium arsenide substrate

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NV575/72 *
NV8032/76 *

Also Published As

Publication number Publication date
NL7800046A (en) 1978-07-10
PL119495B1 (en) 1982-01-30
DE2800335A1 (en) 1978-07-13
JPS53108291A (en) 1978-09-20
DD136907A1 (en) 1979-08-01
PL203827A1 (en) 1978-10-23
FR2377123B1 (en) 1980-05-16
CH616276A5 (en) 1980-03-14
GB1565918A (en) 1980-04-23
CS199407B1 (en) 1980-07-31

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Legal Events

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