FR2363897B1 - - Google Patents
Info
- Publication number
- FR2363897B1 FR2363897B1 FR7626778A FR7626778A FR2363897B1 FR 2363897 B1 FR2363897 B1 FR 2363897B1 FR 7626778 A FR7626778 A FR 7626778A FR 7626778 A FR7626778 A FR 7626778A FR 2363897 B1 FR2363897 B1 FR 2363897B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7626778A FR2363897A1 (en) | 1976-09-06 | 1976-09-06 | MONOLITHIC SEMICONDUCTOR DEVICE CONTAINING A MEANS OF PROTECTION AGAINST OVERVOLTAGES |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7626778A FR2363897A1 (en) | 1976-09-06 | 1976-09-06 | MONOLITHIC SEMICONDUCTOR DEVICE CONTAINING A MEANS OF PROTECTION AGAINST OVERVOLTAGES |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2363897A1 FR2363897A1 (en) | 1978-03-31 |
FR2363897B1 true FR2363897B1 (en) | 1979-01-12 |
Family
ID=9177403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7626778A Granted FR2363897A1 (en) | 1976-09-06 | 1976-09-06 | MONOLITHIC SEMICONDUCTOR DEVICE CONTAINING A MEANS OF PROTECTION AGAINST OVERVOLTAGES |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2363897A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5559767A (en) * | 1978-10-30 | 1980-05-06 | Hitachi Ltd | Semiconductor device, method of fabricating the same and application thereof |
NL7902632A (en) * | 1979-04-04 | 1980-10-07 | Philips Nv | TRANSISTOR SWITCH. |
JPS60126919A (en) * | 1983-12-14 | 1985-07-06 | Toshiba Corp | Darlington transistor circuit |
FR2598043A1 (en) * | 1986-04-25 | 1987-10-30 | Thomson Csf | SEMICONDUCTOR COMPONENT FOR OVERVOLTAGE AND OVERCURRENT PROTECTION |
DE4207349A1 (en) * | 1992-03-07 | 1993-09-09 | Telefunken Microelectron | POWER VOLTAGE LIMIT CIRCUIT |
WO2004079789A2 (en) * | 2003-03-05 | 2004-09-16 | Rensselaer Polytechnic Institute | Interstage isolation in darlington transistors |
-
1976
- 1976-09-06 FR FR7626778A patent/FR2363897A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2363897A1 (en) | 1978-03-31 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |