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FR2363897B1 - - Google Patents

Info

Publication number
FR2363897B1
FR2363897B1 FR7626778A FR7626778A FR2363897B1 FR 2363897 B1 FR2363897 B1 FR 2363897B1 FR 7626778 A FR7626778 A FR 7626778A FR 7626778 A FR7626778 A FR 7626778A FR 2363897 B1 FR2363897 B1 FR 2363897B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7626778A
Other languages
French (fr)
Other versions
FR2363897A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7626778A priority Critical patent/FR2363897A1/en
Publication of FR2363897A1 publication Critical patent/FR2363897A1/en
Application granted granted Critical
Publication of FR2363897B1 publication Critical patent/FR2363897B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/642Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices
FR7626778A 1976-09-06 1976-09-06 MONOLITHIC SEMICONDUCTOR DEVICE CONTAINING A MEANS OF PROTECTION AGAINST OVERVOLTAGES Granted FR2363897A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7626778A FR2363897A1 (en) 1976-09-06 1976-09-06 MONOLITHIC SEMICONDUCTOR DEVICE CONTAINING A MEANS OF PROTECTION AGAINST OVERVOLTAGES

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7626778A FR2363897A1 (en) 1976-09-06 1976-09-06 MONOLITHIC SEMICONDUCTOR DEVICE CONTAINING A MEANS OF PROTECTION AGAINST OVERVOLTAGES

Publications (2)

Publication Number Publication Date
FR2363897A1 FR2363897A1 (en) 1978-03-31
FR2363897B1 true FR2363897B1 (en) 1979-01-12

Family

ID=9177403

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7626778A Granted FR2363897A1 (en) 1976-09-06 1976-09-06 MONOLITHIC SEMICONDUCTOR DEVICE CONTAINING A MEANS OF PROTECTION AGAINST OVERVOLTAGES

Country Status (1)

Country Link
FR (1) FR2363897A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5559767A (en) * 1978-10-30 1980-05-06 Hitachi Ltd Semiconductor device, method of fabricating the same and application thereof
NL7902632A (en) * 1979-04-04 1980-10-07 Philips Nv TRANSISTOR SWITCH.
JPS60126919A (en) * 1983-12-14 1985-07-06 Toshiba Corp Darlington transistor circuit
FR2598043A1 (en) * 1986-04-25 1987-10-30 Thomson Csf SEMICONDUCTOR COMPONENT FOR OVERVOLTAGE AND OVERCURRENT PROTECTION
DE4207349A1 (en) * 1992-03-07 1993-09-09 Telefunken Microelectron POWER VOLTAGE LIMIT CIRCUIT
WO2004079789A2 (en) * 2003-03-05 2004-09-16 Rensselaer Polytechnic Institute Interstage isolation in darlington transistors

Also Published As

Publication number Publication date
FR2363897A1 (en) 1978-03-31

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Legal Events

Date Code Title Description
ST Notification of lapse