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FR2363897A1 - Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions - Google Patents

Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions

Info

Publication number
FR2363897A1
FR2363897A1 FR7626778A FR7626778A FR2363897A1 FR 2363897 A1 FR2363897 A1 FR 2363897A1 FR 7626778 A FR7626778 A FR 7626778A FR 7626778 A FR7626778 A FR 7626778A FR 2363897 A1 FR2363897 A1 FR 2363897A1
Authority
FR
France
Prior art keywords
semiconductor device
monolithic semiconductor
protection against
device containing
against overvoltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7626778A
Other languages
English (en)
Other versions
FR2363897B1 (fr
Inventor
Bernard Roger
Jean-Louis Vite
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7626778A priority Critical patent/FR2363897A1/fr
Publication of FR2363897A1 publication Critical patent/FR2363897A1/fr
Application granted granted Critical
Publication of FR2363897B1 publication Critical patent/FR2363897B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

Dispositif semi-conducteur monolithique comprenant deux transistors formant amplificateur Darlington. Dispositif protégé au moyen d'une diode formée par la couche épitaxiale de base et une région enterrée de type opposé située au niveau de la jonction base-collecteur du transistor d'entrée, la tension de claquage de ladite diode étant inférieure au BVCEO du transistor de puissance. Application aux dispositifs Darlington fonctionnant sur charge inductive.
FR7626778A 1976-09-06 1976-09-06 Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions Granted FR2363897A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7626778A FR2363897A1 (fr) 1976-09-06 1976-09-06 Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7626778A FR2363897A1 (fr) 1976-09-06 1976-09-06 Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions

Publications (2)

Publication Number Publication Date
FR2363897A1 true FR2363897A1 (fr) 1978-03-31
FR2363897B1 FR2363897B1 (fr) 1979-01-12

Family

ID=9177403

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7626778A Granted FR2363897A1 (fr) 1976-09-06 1976-09-06 Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions

Country Status (1)

Country Link
FR (1) FR2363897A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4293868A (en) * 1978-10-30 1981-10-06 Hitachi, Ltd. Semiconductor device, method of manufacturing the same and application thereof
US4317128A (en) * 1979-04-04 1982-02-23 U.S. Philips Corporation Two transistor switch
FR2556900A1 (fr) * 1983-12-14 1985-06-21 Toshiba Kk Circuit de transistor darlington a haute tension de regime
FR2598043A1 (fr) * 1986-04-25 1987-10-30 Thomson Csf Composant semiconducteur de protection contre les surtensions et surintensites
EP0560185A1 (fr) * 1992-03-07 1993-09-15 TEMIC TELEFUNKEN microelectronic GmbH Circuit écrèteur de puissance
WO2004079789A2 (fr) * 2003-03-05 2004-09-16 Rensselaer Polytechnic Institute Isolation entre etages dans des transistors darlington

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4293868A (en) * 1978-10-30 1981-10-06 Hitachi, Ltd. Semiconductor device, method of manufacturing the same and application thereof
US4317128A (en) * 1979-04-04 1982-02-23 U.S. Philips Corporation Two transistor switch
FR2556900A1 (fr) * 1983-12-14 1985-06-21 Toshiba Kk Circuit de transistor darlington a haute tension de regime
FR2598043A1 (fr) * 1986-04-25 1987-10-30 Thomson Csf Composant semiconducteur de protection contre les surtensions et surintensites
WO1987006768A1 (fr) * 1986-04-25 1987-11-05 Thomson-Csf Composant semiconducteur de protection contre les surtensions et surintensites
EP0560185A1 (fr) * 1992-03-07 1993-09-15 TEMIC TELEFUNKEN microelectronic GmbH Circuit écrèteur de puissance
WO2004079789A2 (fr) * 2003-03-05 2004-09-16 Rensselaer Polytechnic Institute Isolation entre etages dans des transistors darlington
WO2004079789A3 (fr) * 2003-03-05 2004-11-11 Rensselaer Polytech Inst Isolation entre etages dans des transistors darlington

Also Published As

Publication number Publication date
FR2363897B1 (fr) 1979-01-12

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Legal Events

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