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FR2360998A1 - PROCESS FOR REALIZING PHOTODIODES WITH EARLIER ILLUMINATION - Google Patents

PROCESS FOR REALIZING PHOTODIODES WITH EARLIER ILLUMINATION

Info

Publication number
FR2360998A1
FR2360998A1 FR7724317A FR7724317A FR2360998A1 FR 2360998 A1 FR2360998 A1 FR 2360998A1 FR 7724317 A FR7724317 A FR 7724317A FR 7724317 A FR7724317 A FR 7724317A FR 2360998 A1 FR2360998 A1 FR 2360998A1
Authority
FR
France
Prior art keywords
photodiodes
type
realizing
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7724317A
Other languages
French (fr)
Other versions
FR2360998B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/793,493 external-priority patent/US4127932A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2360998A1 publication Critical patent/FR2360998A1/en
Application granted granted Critical
Publication of FR2360998B1 publication Critical patent/FR2360998B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier

Landscapes

  • Light Receiving Elements (AREA)

Abstract

L'invention concerne la réalisation de photodiodes au silicium à éclairement antérieur. Elle se rapporte à un procédé de réalisation de photodiodes ayant une structure n**+-p- pi -p**+ comprenant un substrat p**+ 10, une couche épitaxiale 12 de silicium de type pi , une couche 14 de type p, une couche n**+16, un anneau 18 de garde de type n et un canal d'arrêt 22 de type p. Des contacts sont formés avec le substrat, l'anneau de et le canal d'arrêt. Application à la réalisation de photodiodes à avalanche destinées à des photodétecteurs de systèmes de communications optiques.The invention relates to the production of silicon photodiodes with prior illumination. It relates to a method for producing photodiodes having an n ** + - p- pi -p ** + structure comprising a p ** + substrate 10, an epitaxial layer 12 of pi-type silicon, a layer 14 of p-type. p, an n ** + layer 16, an n-type guard ring 18, and a p-type stop channel 22. Contacts are formed with the substrate, the ring and the stop channel. Application to the production of avalanche photodiodes intended for photodetectors of optical communications systems.

FR7724317A 1976-08-06 1977-08-05 PROCESS FOR REALIZING PHOTODIODES WITH EARLIER ILLUMINATION Granted FR2360998A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71239276A 1976-08-06 1976-08-06
US05/793,493 US4127932A (en) 1976-08-06 1977-05-04 Method of fabricating silicon photodiodes

Publications (2)

Publication Number Publication Date
FR2360998A1 true FR2360998A1 (en) 1978-03-03
FR2360998B1 FR2360998B1 (en) 1982-04-09

Family

ID=27108828

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7724317A Granted FR2360998A1 (en) 1976-08-06 1977-08-05 PROCESS FOR REALIZING PHOTODIODES WITH EARLIER ILLUMINATION

Country Status (5)

Country Link
JP (1) JPS5341193A (en)
CA (1) CA1078948A (en)
DE (1) DE2734726C2 (en)
FR (1) FR2360998A1 (en)
GB (1) GB1561953A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0142316A2 (en) * 1983-11-10 1985-05-22 AT&T Corp. Improved p-i-n- and avalanche photodiodes
FR2641647A1 (en) * 1989-01-12 1990-07-13 Rca Inc AVALANCHE PHOTODIODE WITH SILICON WITH LOW NOISE OF MULTIPLICATION
US8664031B2 (en) 2000-11-13 2014-03-04 Sony Corporation Method of manufacturing photodiode intergrated chip

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3001899A1 (en) * 1980-01-19 1981-07-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Planar phototransistor with concentric zones - has emitter zone, filling majority of base zone except base contacting region
JPS5789271A (en) * 1980-11-25 1982-06-03 Moririka:Kk Compound semiconductor element
JPS57104275A (en) * 1980-12-19 1982-06-29 Nec Corp Light receiving element
CN114975672B (en) * 2021-02-26 2024-10-22 中国科学院半导体研究所 Structure and preparation method of back-incident near-infrared enhanced silicon avalanche photodetector

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244567A (en) * 1962-09-10 1966-04-05 Trw Semiconductors Inc Impurity diffusion method
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
JPS49116957A (en) * 1972-10-25 1974-11-08
JPS5031777A (en) * 1973-07-21 1975-03-28

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0142316A2 (en) * 1983-11-10 1985-05-22 AT&T Corp. Improved p-i-n- and avalanche photodiodes
WO1985002296A1 (en) * 1983-11-10 1985-05-23 American Telephone & Telegraph Company IMPROVED p-i-n AND AVALANCHE PHOTODIODES
EP0142316A3 (en) * 1983-11-10 1985-07-10 AT&T Corp. Improved p-i-n- and avalanche photodiodes
FR2641647A1 (en) * 1989-01-12 1990-07-13 Rca Inc AVALANCHE PHOTODIODE WITH SILICON WITH LOW NOISE OF MULTIPLICATION
US8664031B2 (en) 2000-11-13 2014-03-04 Sony Corporation Method of manufacturing photodiode intergrated chip

Also Published As

Publication number Publication date
CA1078948A (en) 1980-06-03
DE2734726A1 (en) 1978-02-09
FR2360998B1 (en) 1982-04-09
JPS5341193A (en) 1978-04-14
GB1561953A (en) 1980-03-05
DE2734726C2 (en) 1987-04-16
JPS6155791B2 (en) 1986-11-29

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