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FR2353116A1 - Circuit amplificateur de lecture pour une memoire mos dynamique - Google Patents

Circuit amplificateur de lecture pour une memoire mos dynamique

Info

Publication number
FR2353116A1
FR2353116A1 FR7715513A FR7715513A FR2353116A1 FR 2353116 A1 FR2353116 A1 FR 2353116A1 FR 7715513 A FR7715513 A FR 7715513A FR 7715513 A FR7715513 A FR 7715513A FR 2353116 A1 FR2353116 A1 FR 2353116A1
Authority
FR
France
Prior art keywords
amplifier circuit
mos memory
reading amplifier
dynamic mos
dynamic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7715513A
Other languages
English (en)
Other versions
FR2353116B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2353116A1 publication Critical patent/FR2353116A1/fr
Application granted granted Critical
Publication of FR2353116B1 publication Critical patent/FR2353116B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H03K3/356026—Bistable circuits using additional transistors in the input circuit with synchronous operation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356069—Bistable circuits using additional transistors in the feedback circuit
    • H03K3/356078—Bistable circuits using additional transistors in the feedback circuit with synchronous operation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356086—Bistable circuits with additional means for controlling the main nodes
    • H03K3/356095—Bistable circuits with additional means for controlling the main nodes with synchronous operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
FR7715513A 1976-05-24 1977-05-20 Circuit amplificateur de lecture pour une memoire mos dynamique Granted FR2353116A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2623219A DE2623219B2 (de) 1976-05-24 1976-05-24 Verfahren zum Betreiben einer Leseverstärkerschaltung für einen dynamischen MOS-Speicher und Anordnung zur Durchführung dieses Verfahrens

Publications (2)

Publication Number Publication Date
FR2353116A1 true FR2353116A1 (fr) 1977-12-23
FR2353116B1 FR2353116B1 (fr) 1984-02-24

Family

ID=5978869

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7715513A Granted FR2353116A1 (fr) 1976-05-24 1977-05-20 Circuit amplificateur de lecture pour une memoire mos dynamique

Country Status (5)

Country Link
US (1) US4119870A (fr)
JP (1) JPS6044748B2 (fr)
DE (1) DE2623219B2 (fr)
FR (1) FR2353116A1 (fr)
GB (1) GB1587129A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2435748A1 (fr) * 1978-09-07 1980-04-04 Siemens Ag Source de courant dynamique integrable pour des modules a semi-conducteurs
EP0025155A2 (fr) * 1979-08-29 1981-03-18 Kabushiki Kaisha Toshiba Dispositif de mémoire non-volatile à semi-conducteurs

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4286178A (en) * 1978-06-12 1981-08-25 Texas Instruments Incorporated Sense amplifier with dual parallel driver transistors in MOS random access memory
US4168490A (en) * 1978-06-26 1979-09-18 Fairchild Camera And Instrument Corporation Addressable word line pull-down circuit
US4543501A (en) * 1978-09-22 1985-09-24 Texas Instruments Incorporated High performance dynamic sense amplifier with dual channel grounding transistor
US4255679A (en) * 1978-10-30 1981-03-10 Texas Instruments Incorporated Depletion load dynamic sense amplifier for MOS random access memory
US4296335A (en) * 1979-06-29 1981-10-20 General Electric Company High voltage standoff MOS driver circuitry
US4421996A (en) * 1981-10-09 1983-12-20 Advanced Micro Devices, Inc. Sense amplification scheme for random access memory
US4694205A (en) * 1985-06-03 1987-09-15 Advanced Micro Devices, Inc. Midpoint sense amplification scheme for a CMOS DRAM
JPS62232796A (ja) * 1986-04-01 1987-10-13 Toshiba Corp 半導体記憶装置
EP0254980B1 (fr) * 1986-07-24 1991-09-25 Siemens Aktiengesellschaft Amplificateur de détection à circuit intégré
US5519341A (en) * 1994-12-02 1996-05-21 Texas Instruments Incorporated Cross coupled quad comparator for current sensing independent of temperature
US6882209B1 (en) * 1997-09-09 2005-04-19 Intel Corporation Method and apparatus for interfacing mixed voltage signals

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2307323A1 (de) * 1973-02-14 1974-09-05 Siemens Ag Verfahren zum betrieb einer regenerierschaltung nach art eines getasteten flipflops
DE2418936A1 (de) * 1974-04-19 1975-11-06 Siemens Ag Regenerier- und bewerterschaltung mit einem flipflop

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
US3959781A (en) * 1974-11-04 1976-05-25 Intel Corporation Semiconductor random access memory
US4004284A (en) * 1975-03-05 1977-01-18 Teletype Corporation Binary voltage-differential sensing circuits, and sense/refresh amplifier circuits for random-access memories
US3978459A (en) * 1975-04-21 1976-08-31 Intel Corporation High density mos memory array
US3993917A (en) * 1975-05-29 1976-11-23 International Business Machines Corporation Parameter independent FET sense amplifier
US4025907A (en) * 1975-07-10 1977-05-24 Burroughs Corporation Interlaced memory matrix array having single transistor cells
US4061999A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
US4028557A (en) * 1976-05-21 1977-06-07 Bell Telephone Laboratories, Incorporated Dynamic sense-refresh detector amplifier

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2307323A1 (de) * 1973-02-14 1974-09-05 Siemens Ag Verfahren zum betrieb einer regenerierschaltung nach art eines getasteten flipflops
DE2418936A1 (de) * 1974-04-19 1975-11-06 Siemens Ag Regenerier- und bewerterschaltung mit einem flipflop

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
EXBK/74 *
EXBK/75 *
EXBK/76 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2435748A1 (fr) * 1978-09-07 1980-04-04 Siemens Ag Source de courant dynamique integrable pour des modules a semi-conducteurs
EP0025155A2 (fr) * 1979-08-29 1981-03-18 Kabushiki Kaisha Toshiba Dispositif de mémoire non-volatile à semi-conducteurs
EP0025155A3 (en) * 1979-08-29 1982-12-29 Tokyo Shibaura Denki Kabushiki Kaisha Nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
DE2623219B2 (de) 1978-10-12
JPS6044748B2 (ja) 1985-10-05
US4119870A (en) 1978-10-10
DE2623219C3 (fr) 1979-06-13
GB1587129A (en) 1981-04-01
FR2353116B1 (fr) 1984-02-24
DE2623219A1 (de) 1977-12-01
JPS52144240A (en) 1977-12-01

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Legal Events

Date Code Title Description
ST Notification of lapse