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FR2347802A1 - Diode laser a ondes de fuite - Google Patents

Diode laser a ondes de fuite

Info

Publication number
FR2347802A1
FR2347802A1 FR7710858A FR7710858A FR2347802A1 FR 2347802 A1 FR2347802 A1 FR 2347802A1 FR 7710858 A FR7710858 A FR 7710858A FR 7710858 A FR7710858 A FR 7710858A FR 2347802 A1 FR2347802 A1 FR 2347802A1
Authority
FR
France
Prior art keywords
laser diode
wave laser
leaking wave
leaking
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7710858A
Other languages
English (en)
Other versions
FR2347802B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of FR2347802A1 publication Critical patent/FR2347802A1/fr
Application granted granted Critical
Publication of FR2347802B1 publication Critical patent/FR2347802B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR7710858A 1976-04-08 1977-04-08 Diode laser a ondes de fuite Granted FR2347802A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/674,692 US4063189A (en) 1976-04-08 1976-04-08 Leaky wave diode laser

Publications (2)

Publication Number Publication Date
FR2347802A1 true FR2347802A1 (fr) 1977-11-04
FR2347802B1 FR2347802B1 (fr) 1983-05-13

Family

ID=24707564

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7710858A Granted FR2347802A1 (fr) 1976-04-08 1977-04-08 Diode laser a ondes de fuite

Country Status (7)

Country Link
US (1) US4063189A (fr)
JP (1) JPS5931997B2 (fr)
CA (1) CA1071744A (fr)
DE (1) DE2711293A1 (fr)
FR (1) FR2347802A1 (fr)
GB (1) GB1549461A (fr)
NL (1) NL7703815A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2507014A1 (fr) * 1981-05-29 1982-12-03 Western Electric Co Dispositif emetteur de lumiere a semiconducteur du type laser
FR2525034A1 (fr) * 1982-04-09 1983-10-14 Carenco Alain Laser a semiconducteur a coupleur directif permettant une sortie laterale

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1137605A (fr) * 1979-01-15 1982-12-14 Donald R. Scifres Laser a grande puissance
JPS57130490A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor laser device
JPS57198680A (en) * 1981-05-30 1982-12-06 Fujitsu Ltd Optical semiconductor device
CA1267716C (fr) * 1984-02-23 1990-04-10 Diode luminescente a emission laterale
JPS61131996U (fr) * 1985-02-06 1986-08-18
JPS61144077U (fr) * 1985-02-26 1986-09-05
JPS6328678U (fr) * 1986-03-12 1988-02-25
JPS62159317U (fr) * 1986-03-26 1987-10-09
US4751707A (en) * 1986-07-03 1988-06-14 Mcdonnell Douglas Corporation Laser diode array exhibiting transverse lasing
JPS63199480A (ja) * 1987-02-16 1988-08-17 Sharp Corp 半導体レ−ザ走査装置
JPH01126963U (fr) * 1988-02-16 1989-08-30
US5101413A (en) * 1991-05-10 1992-03-31 Trw Inc. Large-aperture light sources using resonant leaky-wave coupling
US5349602A (en) * 1993-03-15 1994-09-20 Sdl, Inc. Broad-area MOPA device with leaky waveguide beam expander
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
RU2133534C1 (ru) * 1997-08-08 1999-07-20 Государственное предприятие Научно-исследовательский институт "Полюс" Инжекционный лазер
RU2134007C1 (ru) 1998-03-12 1999-07-27 Государственное предприятие Научно-исследовательский институт "Полюс" Полупроводниковый оптический усилитель
AU762566B2 (en) * 1998-08-10 2003-06-26 D-Led Corporation Injection laser
RU2142665C1 (ru) * 1998-08-10 1999-12-10 Швейкин Василий Иванович Инжекционный лазер
WO2003071643A1 (fr) * 2002-02-18 2003-08-28 Ot´Kratoe Aktsyonernoe Obshchestvo ¨Sistema-Venchur¨ Heterostructure, laser a injection, element amplificateur a semi-conducteur et amplificateur optique a semi-conducteur
US20030219053A1 (en) * 2002-05-21 2003-11-27 The Board Of Trustees Of The University Of Illinois Index guided laser structure
TWI289220B (en) * 2003-02-19 2007-11-01 Pbc Lasers Ltd Apparatus for and method of frequency conversion
RU2278455C1 (ru) 2004-11-17 2006-06-20 Василий Иванович Швейкин Гетероструктура, инжекционный лазер, полупроводниковый усилительный элемент и полупроводниковый оптический усилитель
RU2391756C2 (ru) 2008-06-06 2010-06-10 Василий Иванович Швейкин Диодный лазер, интегральный диодный лазер и интегральный полупроводниковый оптический усилитель
RU2419934C2 (ru) 2009-07-17 2011-05-27 Василий Иванович Швейкин Диодный источник многолучевого когерентного лазерного излучения (варианты)
CN105048283B (zh) * 2015-07-30 2018-06-26 中国科学院长春光学精密机械与物理研究所 高功率共面电极泄露波激光器
RU2627192C1 (ru) * 2016-09-07 2017-08-03 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" Способ получения лазерного излучения с малой расходимостью и диодный лазер для его осуществления

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2232108A1 (fr) * 1973-05-29 1974-12-27 Rca Corp

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411117B2 (fr) * 1972-02-23 1979-05-11
GB1407351A (en) * 1973-02-06 1975-09-24 Standard Telephones Cables Ltd Injection lasers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2232108A1 (fr) * 1973-05-29 1974-12-27 Rca Corp

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/76 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2507014A1 (fr) * 1981-05-29 1982-12-03 Western Electric Co Dispositif emetteur de lumiere a semiconducteur du type laser
FR2525034A1 (fr) * 1982-04-09 1983-10-14 Carenco Alain Laser a semiconducteur a coupleur directif permettant une sortie laterale

Also Published As

Publication number Publication date
FR2347802B1 (fr) 1983-05-13
JPS52123881A (en) 1977-10-18
US4063189A (en) 1977-12-13
DE2711293A1 (de) 1977-10-27
GB1549461A (en) 1979-08-08
NL7703815A (nl) 1977-10-11
JPS5931997B2 (ja) 1984-08-06
CA1071744A (fr) 1980-02-12

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Legal Events

Date Code Title Description
ST Notification of lapse