FR2335053A1 - Reseau d'elements photo-detecteurs du genre photo-transistors presentant une reponse en courant uniforme et son procede de fabrication - Google Patents

Reseau d'elements photo-detecteurs du genre photo-transistors presentant une reponse en courant uniforme et son procede de fabrication

Info

Publication number: FR2335053A1
Authority: FR; France
Prior art keywords: photo; network; manufacturing process; detector elements; current response
Prior art date: 1975-12-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

FR7633197A

Other languages

English (en)

Other versions

FR2335053B1 (fr

Inventor

David E Debar

Francisco H De La Moneda

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-12-12

Filing date

1976-10-27

Publication date

1977-07-08

1976-10-27 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

1977-07-08 Publication of FR2335053A1 publication Critical patent/FR2335053A1/fr

1979-09-21 Application granted granted Critical

1979-09-21 Publication of FR2335053B1 publication Critical patent/FR2335053B1/fr

Status Granted legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/197—Bipolar transistor image sensors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

FR7633197A 1975-12-12 1976-10-27 Reseau d'elements photo-detecteurs du genre photo-transistors presentant une reponse en courant uniforme et son procede de fabrication Granted FR2335053A1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/640,376 US4078243A (en)	1975-12-12	1975-12-12	Phototransistor array having uniform current response and method of manufacture

Publications (2)

Publication Number	Publication Date
FR2335053A1 true FR2335053A1 (fr)	1977-07-08
FR2335053B1 FR2335053B1 (fr)	1979-09-21

Family

ID=24567998

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR7633197A Granted FR2335053A1 (fr)	1975-12-12	1976-10-27	Reseau d'elements photo-detecteurs du genre photo-transistors presentant une reponse en courant uniforme et son procede de fabrication

Country Status (7)

Country	Link
US (1)	US4078243A (fr)
JP (1)	JPS5272589A (fr)
CA (1)	CA1077604A (fr)
DE (1)	DE2647274C2 (fr)
FR (1)	FR2335053A1 (fr)
GB (1)	GB1530040A (fr)
IT (1)	IT1074039B (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0068456A2 (fr) *	1981-07-01	1983-01-05	Honeywell Inc.	Dispositif de détection de rayonnements électromagnétiques comprenant un écran limitant le rayonnement
EP0108480A2 (fr) *	1982-11-01	1984-05-16	Kabushiki Kaisha Toshiba	Elément de conversion photoélectrique
EP0215290A1 (fr) *	1985-08-27	1987-03-25	Siemens Aktiengesellschaft	Photosenseur en a-Si:H pour senseurs d'images
EP0324484A2 (fr) *	1988-01-12	1989-07-19	Kanegafuchi Chemical Industry Co., Ltd.	Dispositif à semiconducteur photosensible
EP0576144A1 (fr) *	1992-05-22	1993-12-29	Matsushita Electronics Corporation	Détecteur d'images à l'état solide et son procédé de fabrication

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5373915A (en) *	1976-12-14	1978-06-30	Sony Corp	Noise eliminating circuit for solid image pickup unit
US4412236A (en) *	1979-08-24	1983-10-25	Hitachi, Ltd.	Color solid-state imager
DE3170600D1 (en) *	1980-09-29	1985-06-27	Ibm	Semiconductor integrated circuit optical image-to-electrical signal transducer
JPS5814569A (ja) *	1981-07-17	1983-01-27	Olympus Optical Co Ltd	カラ−撮像装置
GB2203895B (en) *	1987-03-25	1990-05-09	Matsushita Electric Works Ltd	Light receiving element
JP2708557B2 (ja) *	1988-07-26	1998-02-04	キヤノン株式会社	液体噴射記録ヘッド用素子基板，液体噴射記録ヘッド，ヘッドカートリッジおよび記録装置
JP3186096B2 (ja) *	1990-06-14	2001-07-11	アジレント・テクノロジーズ・インク	感光素子アレイの製造方法
JP2861340B2 (ja) *	1990-09-07	1999-02-24	ソニー株式会社	半導体装置
GB9301405D0 (en) *	1993-01-25	1993-03-17	Philips Electronics Uk Ltd	An image sensor
GB2326784A (en) *	1997-06-16	1998-12-30	Secr Defence	A temperature-insensitive imaging array of phototransistors and subthreshold MOS loads
GB201311055D0 (en) *	2013-06-21	2013-08-07	St Microelectronics Res & Dev	Single-photon avalanche diode and an array thereof
GB2576607B (en) *	2019-06-26	2021-06-16	X Fab Semiconductor Foundries Gmbh	Single photon avalanche diode devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS4122275Y1 (fr) *	1964-10-14	1966-11-07
US3448344A (en) *	1966-03-15	1969-06-03	Westinghouse Electric Corp	Mosaic of semiconductor elements interconnected in an xy matrix
US3558974A (en) *	1968-04-30	1971-01-26	Gen Electric	Light-emitting diode array structure
US3584183A (en) *	1968-10-03	1971-06-08	North American Rockwell	Laser encoding of diode arrays
JPS5213918B2 (fr) *	1972-02-02	1977-04-18
US3774088A (en) *	1972-12-29	1973-11-20	Ibm	An integrated circuit test transistor structure and method of fabricating the same
US3787111A (en) *	1973-04-16	1974-01-22	Bell Telephone Labor Inc	Electrooptic grating for scanning a beam of light
US3925879A (en) *	1974-09-11	1975-12-16	Sensor Technology Inc	Process of fabricating photosensitive Darlington device
US3971065A (en) *	1975-03-05	1976-07-20	Eastman Kodak Company	Color imaging array

1975
- 1975-12-12 US US05/640,376 patent/US4078243A/en not_active Expired - Lifetime
1976
- 1976-10-20 DE DE2647274A patent/DE2647274C2/de not_active Expired
- 1976-10-27 FR FR7633197A patent/FR2335053A1/fr active Granted
- 1976-11-09 IT IT29131/76A patent/IT1074039B/it active
- 1976-11-11 GB GB47064/76A patent/GB1530040A/en not_active Expired
- 1976-11-19 JP JP51138590A patent/JPS5272589A/ja active Granted
- 1976-12-09 CA CA267,508A patent/CA1077604A/fr not_active Expired

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF SOLID-STATE CIRCUITS VOLUME SC5 OCTOBRE 1970, NEW YORK, W.G. MEND ET AL: "MICROMINIATURE SOLID-STATE IMAGING SYSTEM UTILIZING HYBRID LSI TECHNIQUES", PAGES 254 A 260) *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0068456A2 (fr) *	1981-07-01	1983-01-05	Honeywell Inc.	Dispositif de détection de rayonnements électromagnétiques comprenant un écran limitant le rayonnement
EP0068456A3 (en) *	1981-07-01	1985-01-30	Honeywell Inc.	Electromagnetic radiation detection system comprising a radiation limiting shield
EP0108480A2 (fr) *	1982-11-01	1984-05-16	Kabushiki Kaisha Toshiba	Elément de conversion photoélectrique
EP0108480A3 (en) *	1982-11-01	1986-07-16	Kabushiki Kaisha Toshiba	Photoelectric conversion element
US4672221A (en) *	1982-11-01	1987-06-09	Tokyo Shibaura Denki Kabushiki Kaisha	Photoelectric conversion element with light shielding conductive layer
EP0215290A1 (fr) *	1985-08-27	1987-03-25	Siemens Aktiengesellschaft	Photosenseur en a-Si:H pour senseurs d'images
EP0324484A2 (fr) *	1988-01-12	1989-07-19	Kanegafuchi Chemical Industry Co., Ltd.	Dispositif à semiconducteur photosensible
EP0324484A3 (en) *	1988-01-12	1990-10-10	Kanegafuchi Chemical Industry Co., Ltd.	Light sensible semiconductor device
EP0576144A1 (fr) *	1992-05-22	1993-12-29	Matsushita Electronics Corporation	Détecteur d'images à l'état solide et son procédé de fabrication
US5514888A (en) *	1992-05-22	1996-05-07	Matsushita Electronics Corp.	On-chip screen type solid state image sensor and manufacturing method thereof

Also Published As

Publication number	Publication date
FR2335053B1 (fr)	1979-09-21
CA1077604A (fr)	1980-05-13
JPS5329589B2 (fr)	1978-08-22
JPS5272589A (en)	1977-06-17
GB1530040A (en)	1978-10-25
DE2647274A1 (de)	1977-06-16
DE2647274C2 (de)	1982-10-21
US4078243A (en)	1978-03-07
IT1074039B (it)	1985-04-17

Publication	Publication Date	Title
FR2335053A1 (fr)	1977-07-08	Reseau d'elements photo-detecteurs du genre photo-transistors presentant une reponse en courant uniforme et son procede de fabrication
FR2349671A1 (fr)	1977-11-25	Feutre et son procede de fabrication
BE862027A (fr)	1978-06-19	Instrument electrique tel qu'une montre et son procede de fabrication
JPS5296279A (en)	1977-08-12	Manufacture of threeedimentional textile parts
FR2315972A1 (fr)	1977-01-28	Procede de fabrication d'une composition anti-mousse stable et emulsionnee
BE860704A (fr)	1978-03-01	Crible et son procede de fabrication
FI773237A (fi)	1978-05-06	Foerfarande foer upptaeckt av patogena mikro-organismer
BE862307A (fr)	1978-06-23	Articles textiles a poils et procede pour leur fabrication
BE861037A (fr)	1978-05-22	Procede de fabrication de 1,4-butanediol
FR2302603A1 (fr)	1976-09-24	Procede de fabrication d'un reflect
FR2322868A1 (fr)	1977-04-01	Procede de fabrication d'acyloxysilanes
BE854347A (fr)	1977-09-01	Nouvelles omega-aminocarboxamides et leur procede de fabrication
FR2298814A1 (fr)	1976-08-20	Procede de fabrication d'elements electrophotographiques
FR2320944A1 (fr)	1977-03-11	Composes d'isopropylamino-(pyridyloxy)-propanols ayant une action de blocage b-adrenergique et leur procede de fabrication
FR2344706A1 (fr)	1977-10-14	Centreur et son procede d'assemblage
BE849753A (fr)	1977-04-15	Procede de fabrication du chlorure de polyvinyle
FR2322224A1 (fr)	1977-03-25	Procede de fabrication d'un fil du genre bruyere
IT1078681B (it)	1985-05-08	Procedimento per la produzione di un filato con anima
FR2300584A1 (fr)	1976-09-10	Procede de fabri
FR2328998A1 (fr)	1977-05-20	Brosse d'enlevement de revelateur electrophotographique et son procede de fabrication
FR2319492A1 (fr)	1977-02-25	Procede de fabrication d'ecran serigraphique
BE849715A (fr)	1977-06-22	Fibres modacryliques a brillant stable et leur procede de fabrication
FR2331589A1 (fr)	1977-06-10	Stabilisants pour resines chlorees et leur procede de fabrication
FR2337360A1 (fr)	1977-07-29	Toner magnetique a un composant et son procede de fabrication
FR2306538A1 (fr)	1976-10-29	Pile a iode-lithium et son procede de fabrication

Legal Events

Date	Code	Title	Description
1988-08-26	ST	Notification of lapse