FR2288138A1 - Procede d'attaque de l'alumine - Google Patents
Procede d'attaque de l'alumineInfo
- Publication number
- FR2288138A1 FR2288138A1 FR7435152A FR7435152A FR2288138A1 FR 2288138 A1 FR2288138 A1 FR 2288138A1 FR 7435152 A FR7435152 A FR 7435152A FR 7435152 A FR7435152 A FR 7435152A FR 2288138 A1 FR2288138 A1 FR 2288138A1
- Authority
- FR
- France
- Prior art keywords
- fluoride
- oxide layer
- etching
- organic solvent
- removal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5353—Wet etching, e.g. with etchants dissolved in organic solvents
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7435152A FR2288138A1 (fr) | 1974-10-18 | 1974-10-18 | Procede d'attaque de l'alumine |
BR7506737*A BR7506737A (pt) | 1974-10-18 | 1975-10-15 | Processo para tratar corpos com um agente de ataque para remover oxido de aluminio e processo para fabricar dispositivos semicondutores |
GB42222/75A GB1526425A (en) | 1974-10-18 | 1975-10-15 | Method of etching aluminium oxide |
JP12388575A JPS5640492B2 (fr) | 1974-10-18 | 1975-10-16 | |
DE2546316A DE2546316C2 (de) | 1974-10-18 | 1975-10-16 | Verfahren zur Behandlung von Körpern mit einem Fluorid enthaltenden Ätzmittel und seine Anwendung bei der Herstellung von Halbleiteranordnungen |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7435152A FR2288138A1 (fr) | 1974-10-18 | 1974-10-18 | Procede d'attaque de l'alumine |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2288138A1 true FR2288138A1 (fr) | 1976-05-14 |
FR2288138B1 FR2288138B1 (fr) | 1979-02-16 |
Family
ID=9144274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7435152A Granted FR2288138A1 (fr) | 1974-10-18 | 1974-10-18 | Procede d'attaque de l'alumine |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2288138A1 (fr) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2011513A1 (fr) * | 1968-06-10 | 1970-03-06 | Rca Corp |
-
1974
- 1974-10-18 FR FR7435152A patent/FR2288138A1/fr active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2011513A1 (fr) * | 1968-06-10 | 1970-03-06 | Rca Corp |
Also Published As
Publication number | Publication date |
---|---|
FR2288138B1 (fr) | 1979-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1226153A (fr) | ||
SE7906299L (sv) | Plasmaetsningsforfarande | |
GB1208574A (en) | Methods of manufacturing semiconductor devices | |
ATE481733T1 (de) | Hochselektiver ätzprozess für oxide | |
FR2288138A1 (fr) | Procede d'attaque de l'alumine | |
DE3371140D1 (en) | Fabricating a semiconductor device by means of molecular beam epitaxy | |
JPS5222881A (en) | Thin film etching system on semiconductor base plate | |
JPS5687325A (en) | Manufacture of semiconductor device | |
GB1334345A (en) | Etching | |
GB1526425A (en) | Method of etching aluminium oxide | |
JPS5591138A (en) | Die forming of semiconductor device | |
JPS5648148A (en) | Manufacture of semiconductor device | |
ES349369A1 (es) | Un metodo para tratar una cara de un cuerpo semiconductor. | |
GB1536763A (en) | Manufacture of semiconductor body | |
KR890007385A (ko) | 반도체 기판의 평탄화 방법 | |
FR2177554A1 (en) | Etching bath - for thin silicon nitride film masked with photopolymerisable lacquer | |
US3476661A (en) | Process for increasing the reverse voltage of thermally oxidized silicon members with at least one barrier layer | |
JPS56146249A (en) | Semiconductor device | |
JPS56146250A (en) | Semiconductor device and manufacture therefor | |
JPS53140974A (en) | Semiconductor surface treating method | |
JPS6415951A (en) | Manufacture of semiconductor device | |
KR940009758A (ko) | 산화막 건식 식각후 잔류물 제거방법 | |
JPS5255865A (en) | Gas etching method of stain film | |
GB1179062A (en) | Improvements in or relating to the manufacture of semiconductor devices. | |
JPS5263681A (en) | Production of mesa type semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |