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FR2285723A1 - PHOTO-EMITTING / MODULATOR MONOLITHIC DIODE ASSEMBLY - Google Patents

PHOTO-EMITTING / MODULATOR MONOLITHIC DIODE ASSEMBLY

Info

Publication number
FR2285723A1
FR2285723A1 FR7528514A FR7528514A FR2285723A1 FR 2285723 A1 FR2285723 A1 FR 2285723A1 FR 7528514 A FR7528514 A FR 7528514A FR 7528514 A FR7528514 A FR 7528514A FR 2285723 A1 FR2285723 A1 FR 2285723A1
Authority
FR
France
Prior art keywords
modulator
photo
emitting
diode assembly
monolithic diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7528514A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Electric Co Ltd filed Critical Northern Electric Co Ltd
Publication of FR2285723A1 publication Critical patent/FR2285723A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00Optical logic elements; Optical bistable devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02395Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02579P-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02581Transition metal or rare earth elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02625Liquid deposition using melted materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7528514A 1974-09-17 1975-09-17 PHOTO-EMITTING / MODULATOR MONOLITHIC DIODE ASSEMBLY Withdrawn FR2285723A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA209,398A CA1005556A (en) 1974-09-17 1974-09-17 Monolithic light-emitting diode and modulator

Publications (1)

Publication Number Publication Date
FR2285723A1 true FR2285723A1 (en) 1976-04-16

Family

ID=4101162

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7528514A Withdrawn FR2285723A1 (en) 1974-09-17 1975-09-17 PHOTO-EMITTING / MODULATOR MONOLITHIC DIODE ASSEMBLY

Country Status (7)

Country Link
JP (1) JPS5821435B2 (en)
CA (1) CA1005556A (en)
DE (1) DE2541227A1 (en)
FR (1) FR2285723A1 (en)
GB (1) GB1517013A (en)
NL (1) NL7510749A (en)
SE (1) SE7510415L (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2485812A1 (en) * 1980-06-24 1981-12-31 Sumitomo Electric Industries SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62184191A (en) * 1986-02-07 1987-08-12 関東レザ−株式会社 Production of dew condensation preventing wallpaper having embossed pattern

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1452258A (en) * 1964-07-31 1966-02-25 Battelle Development Corp Semiconductor device
US3295911A (en) * 1963-03-15 1967-01-03 Bell Telephone Labor Inc Semiconductor light modulators
US3458703A (en) * 1964-07-29 1969-07-29 Hitachi Ltd Reverse biased semiconductor laser light modulator fabricated from same material as laser light source
FR2158328A1 (en) * 1971-10-28 1973-06-15 Western Electric Co
US3768037A (en) * 1965-11-26 1973-10-23 Hitachi Ltd Semiconductor diode laser device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3295911A (en) * 1963-03-15 1967-01-03 Bell Telephone Labor Inc Semiconductor light modulators
US3458703A (en) * 1964-07-29 1969-07-29 Hitachi Ltd Reverse biased semiconductor laser light modulator fabricated from same material as laser light source
FR1452258A (en) * 1964-07-31 1966-02-25 Battelle Development Corp Semiconductor device
US3768037A (en) * 1965-11-26 1973-10-23 Hitachi Ltd Semiconductor diode laser device
FR2158328A1 (en) * 1971-10-28 1973-06-15 Western Electric Co

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2485812A1 (en) * 1980-06-24 1981-12-31 Sumitomo Electric Industries SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Also Published As

Publication number Publication date
CA1005556A (en) 1977-02-15
DE2541227A1 (en) 1976-03-25
NL7510749A (en) 1976-03-19
SE7510415L (en) 1976-03-18
JPS5821435B2 (en) 1983-04-30
JPS5154382A (en) 1976-05-13
GB1517013A (en) 1978-07-05

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Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse