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FR2234664B1 - - Google Patents

Info

Publication number
FR2234664B1
FR2234664B1 FR7420897A FR7420897A FR2234664B1 FR 2234664 B1 FR2234664 B1 FR 2234664B1 FR 7420897 A FR7420897 A FR 7420897A FR 7420897 A FR7420897 A FR 7420897A FR 2234664 B1 FR2234664 B1 FR 2234664B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7420897A
Other versions
FR2234664A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2234664A1 publication Critical patent/FR2234664A1/fr
Application granted granted Critical
Publication of FR2234664B1 publication Critical patent/FR2234664B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/62Electrodes ohmically coupled to a semiconductor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)
FR7420897A 1973-06-22 1974-06-17 Expired FR2234664B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00372648A US3855613A (en) 1973-06-22 1973-06-22 A solid state switch using an improved junction field effect transistor

Publications (2)

Publication Number Publication Date
FR2234664A1 FR2234664A1 (fr) 1975-01-17
FR2234664B1 true FR2234664B1 (fr) 1978-07-07

Family

ID=23469081

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7420897A Expired FR2234664B1 (fr) 1973-06-22 1974-06-17

Country Status (10)

Country Link
US (1) US3855613A (fr)
JP (1) JPS5038474A (fr)
BE (1) BE816728A (fr)
CA (1) CA1005927A (fr)
DE (1) DE2429036A1 (fr)
FR (1) FR2234664B1 (fr)
GB (1) GB1469980A (fr)
IT (1) IT1012303B (fr)
NL (1) NL7408391A (fr)
SE (1) SE389766B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104672A (en) * 1976-10-29 1978-08-01 Bell Telephone Laboratories, Incorporated High power gallium arsenide schottky barrier field effect transistor
JPS5427672U (fr) * 1977-07-25 1979-02-23
US4186410A (en) * 1978-06-27 1980-01-29 Bell Telephone Laboratories, Incorporated Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
US4471330A (en) * 1982-11-01 1984-09-11 General Electric Company Digital phase bit for microwave operation
GB2207805B (en) * 1987-08-06 1991-12-11 Plessey Co Plc Improvements in or relating to microwave phase shifters
US6191754B1 (en) * 1998-08-18 2001-02-20 Northrop Grumman Corporation Antenna system using time delays with mercury wetted switches
US6642578B1 (en) 2002-07-22 2003-11-04 Anadigics, Inc. Linearity radio frequency switch with low control voltage

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2816847A (en) * 1953-11-18 1957-12-17 Bell Telephone Labor Inc Method of fabricating semiconductor signal translating devices
US3316131A (en) * 1963-08-15 1967-04-25 Texas Instruments Inc Method of producing a field-effect transistor
US3405330A (en) * 1965-11-10 1968-10-08 Fairchild Camera Instr Co Remote-cutoff field effect transistor
US3421952A (en) * 1966-02-02 1969-01-14 Texas Instruments Inc Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source
US3413531A (en) * 1966-09-06 1968-11-26 Ion Physics Corp High frequency field effect transistor
US3538399A (en) * 1968-05-15 1970-11-03 Tektronix Inc Pn junction gated field effect transistor having buried layer of low resistivity
US3657615A (en) * 1970-06-30 1972-04-18 Westinghouse Electric Corp Low thermal impedance field effect transistor
US3725136A (en) * 1971-06-01 1973-04-03 Texas Instruments Inc Junction field effect transistor and method of fabrication

Also Published As

Publication number Publication date
IT1012303B (it) 1977-03-10
SE389766B (sv) 1976-11-15
FR2234664A1 (fr) 1975-01-17
AU7002374A (en) 1975-12-18
GB1469980A (en) 1977-04-14
JPS5038474A (fr) 1975-04-09
US3855613A (en) 1974-12-17
DE2429036A1 (de) 1975-01-16
BE816728A (fr) 1974-10-16
NL7408391A (fr) 1974-12-24
CA1005927A (en) 1977-02-22
SE7408022L (fr) 1974-12-23

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Legal Events

Date Code Title Description
ST Notification of lapse