FR2204048B1 - - Google Patents

Info

Publication number: FR2204048B1
Authority: FR; France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

FR7334564A

Other versions

FR2204048A1 (fr

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Licentia Patent Verwaltungs GmbH

Original Assignee

Licentia Patent Verwaltungs GmbH

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1972-09-29

Filing date

1973-09-26

Publication date

1978-02-17

1973-09-26 Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH

1974-05-17 Publication of FR2204048A1 publication Critical patent/FR2204048A1/fr

1978-02-17 Application granted granted Critical

1978-02-17 Publication of FR2204048B1 publication Critical patent/FR2204048B1/fr

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
- H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
- H10F55/155—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
- H10F55/16—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive semiconductor devices have no potential barriers
- H10F55/165—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive semiconductor devices have no potential barriers wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes

FR7334564A 1972-09-29 1973-09-26 Expired FR2204048B1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE19722247966 DE2247966A1 (de)	1972-09-29	1972-09-29	Halbleiteranordnung zum nachweis von lichtstrahlen

Publications (2)

Publication Number	Publication Date
FR2204048A1 FR2204048A1 (fr)	1974-05-17
FR2204048B1 true FR2204048B1 (fr)	1978-02-17

Family

ID=5857822

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR7334564A Expired FR2204048B1 (fr)	1972-09-29	1973-09-26

Country Status (4)

Country	Link
US (1)	US3891993A (fr)
DE (1)	DE2247966A1 (fr)
FR (1)	FR2204048B1 (fr)
GB (1)	GB1447872A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CA1107379A (fr) *	1977-03-24	1981-08-18	Eastman Kodak Company	Dispositif de formation d'image sensible a la couleur utilisant le phenomene d'absorption optique dans un semiconducteur selon la longueur d'onde
US4323911A (en) *	1978-12-14	1982-04-06	Bell Telephone Laboratories, Incorporated	Demultiplexing photodetectors
US4213138A (en) *	1978-12-14	1980-07-15	Bell Telephone Laboratories, Incorporated	Demultiplexing photodetector
US4300107A (en) *	1979-07-18	1981-11-10	Bell Telephone Laboratories, Incorporated	Trap doped laser combined with photodetector
DE2946108C2 (de) *	1979-11-15	1985-02-14	Koch & Sterzel Gmbh & Co, 4300 Essen	Strahlendetektor
US4374390A (en) *	1980-09-10	1983-02-15	Bell Telephone Laboratories, Incorporated	Dual-wavelength light-emitting diode
US4399448A (en) *	1981-02-02	1983-08-16	Bell Telephone Laboratories, Incorporated	High sensitivity photon feedback photodetectors
US4577207A (en) *	1982-12-30	1986-03-18	At&T Bell Laboratories	Dual wavelength optical source
GB8325935D0 (en) *	1983-09-28	1983-11-02	Secr Defence	Thermal detector
US5345093A (en) *	1991-04-15	1994-09-06	The United States Of America As Represented By The Secretary Of The Navy	Graded bandgap semiconductor device for real-time imaging

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR1404152A (fr) *	1963-08-10	1965-06-25	Semiconductor Res Found	Dispositif photoémissif à semi-conducteurs
DE1439687C3 (de) *	1964-05-26	1975-10-02	Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm	Festkörperbildwandler
US3466441A (en) *	1967-04-07	1969-09-09	Bell Telephone Labor Inc	Semiconductor infrared-to-visible light image converter
US3752713A (en) *	1970-02-14	1973-08-14	Oki Electric Ind Co Ltd	Method of manufacturing semiconductor elements by liquid phase epitaxial growing method

1972
- 1972-09-29 DE DE19722247966 patent/DE2247966A1/de active Pending
1973
- 1973-09-20 US US399042A patent/US3891993A/en not_active Expired - Lifetime
- 1973-09-25 GB GB4487273A patent/GB1447872A/en not_active Expired
- 1973-09-26 FR FR7334564A patent/FR2204048B1/fr not_active Expired

Also Published As

Publication number	Publication date
DE2247966A1 (de)	1974-04-11
US3891993A (en)	1975-06-24
FR2204048A1 (fr)	1974-05-17
GB1447872A (en)	1976-09-02

Publication	Publication Date	Title
US3931088B1 (fr)	1983-03-15
JPS4884252A (fr)	1973-11-09
FR2196911A1 (fr)	1974-03-22
FR2204048B1 (fr)	1978-02-17
JPS534146B2 (fr)	1978-02-14
JPS48101605A (fr)	1973-12-21
JPS5749539Y2 (fr)	1982-10-29
JPS4937792A (fr)	1974-04-08
FR2227404B2 (fr)	1978-06-23
JPS5038573Y2 (fr)	1975-11-07
JPS5018620Y2 (fr)	1975-06-06
FR2175527B1 (fr)	1975-03-14
JPS4925991U (fr)	1974-03-05
FR2177530A1 (fr)	1973-11-09
AR202780Q (fr)	1975-07-24
CH576225A5 (fr)	1976-06-15
CH575946A5 (fr)	1976-05-31
SE7116791L (fr)	1972-07-03
CH585511A5 (fr)	1977-03-15
CH584194A5 (fr)	1977-01-31
CH583726A5 (fr)	1977-01-14
CH579521A5 (fr)	1976-09-15
CH578986A5 (fr)	1976-08-31
CH574883A5 (fr)	1976-04-30
BG19718A1 (fr)	1975-10-10

Legal Events

Date	Code	Title	Description
1979-11-23	ST	Notification of lapse