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FR2063040B3 - - Google Patents

Info

Publication number
FR2063040B3
FR2063040B3 FR707034893A FR7034893A FR2063040B3 FR 2063040 B3 FR2063040 B3 FR 2063040B3 FR 707034893 A FR707034893 A FR 707034893A FR 7034893 A FR7034893 A FR 7034893A FR 2063040 B3 FR2063040 B3 FR 2063040B3
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR707034893A
Other versions
FR2063040A7 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Application granted granted Critical
Publication of FR2063040A7 publication Critical patent/FR2063040A7/fr
Publication of FR2063040B3 publication Critical patent/FR2063040B3/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/165—Transmutation doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)
FR707034893A 1969-09-27 1970-09-25 Expired FR2063040B3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691948884 DE1948884B2 (de) 1969-09-27 1969-09-27 Verfahren zum beseitigen von inversionsschichten

Publications (2)

Publication Number Publication Date
FR2063040A7 FR2063040A7 (fr) 1971-07-02
FR2063040B3 true FR2063040B3 (fr) 1973-06-29

Family

ID=5746675

Family Applications (1)

Application Number Title Priority Date Filing Date
FR707034893A Expired FR2063040B3 (fr) 1969-09-27 1970-09-25

Country Status (4)

Country Link
US (1) US3733222A (fr)
DE (1) DE1948884B2 (fr)
FR (1) FR2063040B3 (fr)
GB (1) GB1318603A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2433991A1 (de) * 1974-07-15 1976-02-05 Siemens Ag Verfahren zum dotieren einer halbleiterschicht
FR2281650A1 (fr) * 1974-08-06 1976-03-05 Telecommunications Sa Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede
DE2753488C2 (de) * 1977-12-01 1986-06-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von n-dotiertem Silicium durch Neutronenbestrahlung
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
US4348351A (en) * 1980-04-21 1982-09-07 Monsanto Company Method for producing neutron doped silicon having controlled dopant variation
JPS57210635A (en) * 1981-06-19 1982-12-24 Tokyo Daigaku Manufacture of semiconductor device
US4526624A (en) * 1982-07-02 1985-07-02 California Institute Of Technology Enhanced adhesion of films to semiconductors or metals by high energy bombardment

Also Published As

Publication number Publication date
US3733222A (en) 1973-05-15
DE1948884A1 (de) 1971-04-08
DE1948884B2 (de) 1971-09-30
GB1318603A (en) 1973-05-31
FR2063040A7 (fr) 1971-07-02

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Legal Events

Date Code Title Description
ST Notification of lapse