FR2027311A1 - - Google Patents
Info
- Publication number
- FR2027311A1 FR2027311A1 FR6943146A FR6943146A FR2027311A1 FR 2027311 A1 FR2027311 A1 FR 2027311A1 FR 6943146 A FR6943146 A FR 6943146A FR 6943146 A FR6943146 A FR 6943146A FR 2027311 A1 FR2027311 A1 FR 2027311A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78775268A | 1968-12-30 | 1968-12-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2027311A1 true FR2027311A1 (es) | 1970-09-25 |
FR2027311B1 FR2027311B1 (es) | 1973-10-19 |
Family
ID=25142422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6943146A Expired FR2027311B1 (es) | 1968-12-30 | 1969-12-12 |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE1959667A1 (es) |
FR (1) | FR2027311B1 (es) |
GB (1) | GB1265037A (es) |
NL (1) | NL6918929A (es) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS495573A (es) * | 1972-05-04 | 1974-01-18 | ||
JPS4940872A (es) * | 1972-08-25 | 1974-04-17 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1198099A (fr) * | 1958-04-21 | 1959-12-04 | Silec Liaisons Elec | Procédé d'obtention de jonctions par diffusion solide dans des corps semi-conducteurs |
-
1969
- 1969-11-21 GB GB1265037D patent/GB1265037A/en not_active Expired
- 1969-11-28 DE DE19691959667 patent/DE1959667A1/de active Pending
- 1969-12-12 FR FR6943146A patent/FR2027311B1/fr not_active Expired
- 1969-12-17 NL NL6918929A patent/NL6918929A/xx unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1198099A (fr) * | 1958-04-21 | 1959-12-04 | Silec Liaisons Elec | Procédé d'obtention de jonctions par diffusion solide dans des corps semi-conducteurs |
Non-Patent Citations (3)
Title |
---|
*REVUE ALLEMANDE "DIE TELEFUNKEN-ROHRE" NO 47, 1968 "HERSTELLUNG UND EIGENSCHAFTEN VON GLASIGEN SCHICHTEN AUF HALBLEITER MATERIALIEN" H.P. SCHOCH, PAGES 103 A 122.) * |
*REVUE AMERICAINE "IEEE TRANSACTIONS ON NUCLEAR SCIENCE" VOL. NS-14, NO 6, DECEMBRE 1967, "EFFECT OF ELECTRON, RADIATION ON SILICON NITRIDE INSULATED GATE FIELD EFFECT TRANSISTORS" P.A. NEWMAN ET H. A. R. WEGENER, PAGES 293 A 298. * |
REVUE BRITANNIQUE "SOLID STATE ELECTRONICS" VOL. 10, SEPTEMBRE 1967 : THE PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES" T.L. CHU ET AL. PAGES 897-905. * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS495573A (es) * | 1972-05-04 | 1974-01-18 | ||
JPS4940872A (es) * | 1972-08-25 | 1974-04-17 |
Also Published As
Publication number | Publication date |
---|---|
DE1959667A1 (de) | 1970-07-02 |
FR2027311B1 (es) | 1973-10-19 |
GB1265037A (es) | 1972-03-01 |
NL6918929A (es) | 1970-07-02 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |