FR1592236A - - Google Patents

Info

Publication number: FR1592236A
Authority: FR; France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1967-11-13

Filing date

1968-11-13

Publication date

1970-05-11

1968-11-13 Application filed filed Critical

1970-05-11 Application granted granted Critical

1970-05-11 Publication of FR1592236A publication Critical patent/FR1592236A/fr

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47L—DOMESTIC WASHING OR CLEANING; SUCTION CLEANERS IN GENERAL
- A47L23/00—Cleaning footwear
- A47L23/04—Hand implements for shoe-cleaning, with or without applicators for shoe polish
- A47L23/06—Hand implements for shoe-cleaning, with or without applicators for shoe polish with electric drive
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
- H10D8/25—Zener diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/645—Combinations of only lateral BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/928—Active solid-state devices, e.g. transistors, solid-state diodes with shorted PN or schottky junction other than emitter junction
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/983—Zener diodes

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Electrodes Of Semiconductors (AREA)

FR1592236D 1967-11-13 1968-11-13 Expired FR1592236A (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US68233867A	1967-11-13	1967-11-13

Publications (1)

Publication Number	Publication Date
FR1592236A true FR1592236A (fr)	1970-05-11

Family

ID=24739252

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR1592236D Expired FR1592236A (fr)	1967-11-13	1968-11-13

Country Status (4)

Country	Link
US (1)	US3519900A (fr)
DE (1)	DE1805261A1 (fr)
FR (1)	FR1592236A (fr)
NL (1)	NL6816160A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2096859B2 (fr) *	1970-07-07	1973-11-16	Sescosem
US3953254A (en) *	1972-11-07	1976-04-27	Thomson-Csf	Method of producing temperature compensated reference diodes utilizing selective epitaxial growth
US3909926A (en) *	1973-11-07	1975-10-07	Jearld L Hutson	Method of fabricating a semiconductor diode having high voltage characteristics
US4075649A (en) *	1975-11-25	1978-02-21	Siemens Corporation	Single chip temperature compensated reference diode and method for making same
DE2855972C2 (de) *	1978-12-23	1984-09-27	SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg	Halbleiteranordnung mit zwei integrierten und antiparallel geschalteten Dioden sowie Verfahren zu ihrer Herstellung
US4899199A (en) *	1983-09-30	1990-02-06	International Rectifier Corporation	Schottky diode with titanium or like layer contacting the dielectric layer
US4886762A (en) *	1985-08-06	1989-12-12	Motorola Inc.	Monolithic temperature compensated voltage-reference diode and method for its manufacture
US4870467A (en) *	1985-08-06	1989-09-26	Motorola, Inc.	Monolithic temperature compensated voltage-reference diode and method of its manufacture

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2937963A (en) *	1958-07-14	1960-05-24	Int Rectifier Corp	Temperature compensating zener diode construction
US3309241A (en) *	1961-03-21	1967-03-14	Jr Donald C Dickson	P-n junction having bulk breakdown only and method of producing same
FR1372145A (fr) *	1963-02-15	1964-09-11	Intermetall	Procédé pour l'établissement d'un passage p-n dans un corps semi-conducteur et éléments semi-conducteurs conformes à ceux ainsi obtenus
US3293010A (en) *	1964-01-02	1966-12-20	Motorola Inc	Passivated alloy diode
US3341377A (en) *	1964-10-16	1967-09-12	Fairchild Camera Instr Co	Surface-passivated alloy semiconductor devices and method for producing the same
US3338758A (en) *	1964-12-31	1967-08-29	Fairchild Camera Instr Co	Surface gradient protected high breakdown junctions
US3410735A (en) *	1965-10-22	1968-11-12	Motorola Inc	Method of forming a temperature compensated reference diode

1967
- 1967-11-13 US US682338A patent/US3519900A/en not_active Expired - Lifetime
1968
- 1968-10-25 DE DE19681805261 patent/DE1805261A1/de active Pending
- 1968-11-13 FR FR1592236D patent/FR1592236A/fr not_active Expired
- 1968-11-13 NL NL6816160A patent/NL6816160A/xx unknown

Also Published As

Publication number	Publication date
DE1805261A1 (de)	1969-06-26
US3519900A (en)	1970-07-07
NL6816160A (fr)	1969-05-16

Publication	Publication Date	Title
AU5765369A (fr)	1971-02-11
AU416737B2 (fr)	1971-09-03
AU342066A (fr)	1968-09-19
AU610966A (fr)	1968-11-28
AU2454867A (fr)	1969-01-16
AU3189468A (fr)	1969-07-10
BE692778A (fr)	1967-07-03
BE692553A (fr)	1967-07-13
BE711735A (fr)	1968-07-15
BE711362A (fr)	1968-07-01
BE711059A (fr)	1968-08-20
BE710802A (fr)	1968-08-16
BE710653A (fr)	1968-06-17
BE710138A (fr)	1968-07-31
BE709670A (fr)	1968-05-30
BE709587A (fr)	1968-05-30
BE709365A (fr)	1968-07-15
BE709271A (fr)	1968-05-16
BE708897A (fr)	1968-07-03
BE707434A (fr)	1968-06-04
BE704305A (fr)	1968-03-26
BE703133A (fr)	1968-01-15
BE692780A (fr)	1967-07-03
BE692779A (fr)	1967-07-03
BE692375A (fr)	1967-06-16

Legal Events

Date	Code	Title	Description
1978-01-20	ST	Notification of lapse