FR1582686A - - Google Patents

Info

Publication number: FR1582686A
Authority: FR; France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1967-10-19

Filing date

1968-09-03

Publication date

1969-10-03

1968-09-03 Application filed filed Critical

1969-10-03 Application granted granted Critical

1969-10-03 Publication of FR1582686A publication Critical patent/FR1582686A/fr

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/973—Substrate orientation

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Bipolar Transistors (AREA)
Semiconductor Integrated Circuits (AREA)

FR1582686D 1967-10-19 1968-09-03 Expired FR1582686A (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US67645167A	1967-10-19	1967-10-19

Publications (1)

Publication Number	Publication Date
FR1582686A true FR1582686A (fr)	1969-10-03

Family

ID=24714587

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR1582686D Expired FR1582686A (fr)	1967-10-19	1968-09-03

Country Status (10)

Country	Link
US (1)	US3585464A (fr)
JP (1)	JPS5141555B1 (fr)
BE (1)	BE720739A (fr)
CH (1)	CH484523A (fr)
DE (1)	DE1802849B2 (fr)
ES (1)	ES359297A1 (fr)
FR (1)	FR1582686A (fr)
GB (1)	GB1241057A (fr)
NL (1)	NL6814919A (fr)
SE (1)	SE352781B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3860948A (en) *	1964-02-13	1975-01-14	Hitachi Ltd	Method for manufacturing semiconductor devices having oxide films and the semiconductor devices manufactured thereby
US3717515A (en) *	1969-11-10	1973-02-20	Ibm	Process for fabricating a pedestal transistor
JPS4813572B1 (fr) *	1969-12-01	1973-04-27
US3765961A (en) *	1971-02-12	1973-10-16	Bell Telephone Labor Inc	Special masking method of fabricating a planar avalanche transistor
US3964089A (en) *	1972-09-21	1976-06-15	Bell Telephone Laboratories, Incorporated	Junction transistor with linearly graded impurity concentration in the high resistivity portion of its collector zone
JPS58179174U (ja) *	1982-05-24	1983-11-30	有限会社大川工芸	玉廻し玩具
US5198692A (en) *	1989-01-09	1993-03-30	Kabushiki Kaisha Toshiba	Semiconductor device including bipolar transistor with step impurity profile having low and high concentration emitter regions
US5159429A (en) *	1990-01-23	1992-10-27	International Business Machines Corporation	Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same
DE10358985B3 (de) *	2003-12-16	2005-05-19	Infineon Technologies Ag	Halbleiterbauelement mit einem pn-Übergang und einer auf einer Oberfläche aufgebrachten Passivierungsschicht

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL277330A (fr) *	1961-04-22
US3437890A (en) *	1963-05-10	1969-04-08	Ibm	Diffused-epitaxial scanistors
DE1514082C3 (de) *	1964-02-13	1984-08-30	Kabushiki Kaisha Hitachi Seisakusho, Tokio/Tokyo	Feldeffekt-Transistor
US3461003A (en) *	1964-12-14	1969-08-12	Motorola Inc	Method of fabricating a semiconductor structure with an electrically isolated region of semiconductor material
USB460009I5 (fr) *	1965-06-01
US3380153A (en) *	1965-09-30	1968-04-30	Westinghouse Electric Corp	Method of forming a semiconductor integrated circuit that includes a fast switching transistor

1967
- 1967-10-19 US US676451A patent/US3585464A/en not_active Expired - Lifetime
1968
- 1968-09-03 FR FR1582686D patent/FR1582686A/fr not_active Expired
- 1968-09-12 BE BE720739D patent/BE720739A/xx not_active Expired
- 1968-10-02 GB GB46759/68A patent/GB1241057A/en not_active Expired
- 1968-10-12 DE DE19681802849 patent/DE1802849B2/de active Pending
- 1968-10-15 CH CH1539468A patent/CH484523A/de not_active IP Right Cessation
- 1968-10-16 SE SE13947/68A patent/SE352781B/xx unknown
- 1968-10-18 NL NL6814919A patent/NL6814919A/xx unknown
- 1968-10-18 ES ES359297A patent/ES359297A1/es not_active Expired
1973
- 1973-05-23 JP JP48056947A patent/JPS5141555B1/ja active Pending

Also Published As

Publication number	Publication date
DE1802849A1 (de)	1969-04-30
GB1241057A (en)	1971-07-28
NL6814919A (fr)	1969-04-22
ES359297A1 (es)	1970-06-01
JPS5141555B1 (fr)	1976-11-10
US3585464A (en)	1971-06-15
BE720739A (fr)	1969-02-17
SE352781B (fr)	1973-01-08
DE1802849B2 (de)	1972-10-19
CH484523A (de)	1970-01-15

Publication	Publication Date	Title
AU425114B2 (fr)	1972-06-14
AU416737B2 (fr)	1971-09-03
AU2277767A (fr)	1968-12-12
AU342066A (fr)	1968-09-19
AU610966A (fr)	1968-11-28
AU2528767A (fr)	1970-01-08
AU2256867A (fr)	1968-12-05
AU2116667A (fr)	1969-04-03
AU3189468A (fr)	1969-07-10
AU3151267A (fr)	1968-01-08
AU2454867A (fr)	1969-01-16
AU2977667A (fr)	1969-05-22
AU1677166A (fr)	1968-07-25
BE609869A (fr)
AU3054676A (fr)	1969-06-19
AU2406369A (fr)	1969-01-09
AU23366A (fr)	1968-07-11
BE483855A (fr)
AU408412B2 (fr)	1970-11-23
BE477645A (fr)
AU1614766A (fr)	1968-07-11
AU459699A (fr)	1975-04-10
BE720739A (fr)	1969-02-17
BE711459A (fr)	1968-07-01
AU97666A (fr)	1968-08-01