FR1563879A - - Google Patents
Info
- Publication number
- FR1563879A FR1563879A FR139375A FR1563879DA FR1563879A FR 1563879 A FR1563879 A FR 1563879A FR 139375 A FR139375 A FR 139375A FR 1563879D A FR1563879D A FR 1563879DA FR 1563879 A FR1563879 A FR 1563879A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR139375 | 1968-02-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1563879A true FR1563879A (nl) | 1969-04-18 |
Family
ID=8645800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR139375A Expired FR1563879A (nl) | 1968-02-09 | 1968-02-09 |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1906324C3 (nl) |
| FR (1) | FR1563879A (nl) |
| GB (1) | GB1223543A (nl) |
| NL (1) | NL6901879A (nl) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2128536A1 (de) * | 1970-06-10 | 1971-12-16 | Hitachi Ltd | Halbleiterbauelement mit zwei MOS-Transistoren vom nicht-symmetrischen Typ |
| FR2158385A1 (nl) * | 1971-11-03 | 1973-06-15 | Siemens Ag |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3995304A (en) * | 1972-01-10 | 1976-11-30 | Teledyne, Inc. | D/A bit switch |
| US4599634A (en) * | 1978-08-15 | 1986-07-08 | National Semiconductor Corporation | Stress insensitive integrated circuit |
| US4455566A (en) * | 1979-06-18 | 1984-06-19 | Fujitsu Limited | Highly integrated semiconductor memory device |
| JPS5688350A (en) * | 1979-12-19 | 1981-07-17 | Toshiba Corp | Semiconductor device |
| JPH0642537B2 (ja) * | 1985-11-15 | 1994-06-01 | 株式会社東芝 | 半導体装置 |
| DE3818533C2 (de) * | 1987-06-01 | 1994-05-26 | Mitsubishi Electric Corp | Feldeffekttransistor |
| US5040035A (en) * | 1989-12-22 | 1991-08-13 | At&T Bell Laboratories | MOS devices having improved threshold match |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE632998A (nl) * | 1962-05-31 | |||
| GB1054513A (nl) * | 1963-03-21 | 1900-01-01 | ||
| GB1054514A (nl) * | 1963-04-05 | 1900-01-01 |
-
1968
- 1968-02-09 FR FR139375A patent/FR1563879A/fr not_active Expired
-
1969
- 1969-02-06 NL NL6901879A patent/NL6901879A/xx unknown
- 1969-02-07 GB GB6882/69A patent/GB1223543A/en not_active Expired
- 1969-02-08 DE DE1906324A patent/DE1906324C3/de not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2128536A1 (de) * | 1970-06-10 | 1971-12-16 | Hitachi Ltd | Halbleiterbauelement mit zwei MOS-Transistoren vom nicht-symmetrischen Typ |
| FR2158385A1 (nl) * | 1971-11-03 | 1973-06-15 | Siemens Ag |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6901879A (nl) | 1969-08-12 |
| DE1906324A1 (de) | 1969-09-04 |
| DE1906324C3 (de) | 1983-12-29 |
| DE1906324B2 (de) | 1979-11-29 |
| GB1223543A (en) | 1971-02-24 |