FR1507409A - Perfectionnements aux systèmes de mémoire - Google Patents

Perfectionnements aux systèmes de mémoire

Info

Publication number: FR1507409A
Authority: FR; France
Prior art keywords: memory systems; memory; systems
Prior art date: 1965-12-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

FR89530A

Other languages

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

RCA Corp

Original Assignee

RCA Corp

Radio Corporation of America

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1965-12-30

Filing date

1966-12-30

Publication date

1967-12-29

1966-12-30 Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp

1967-12-29 Application granted granted Critical

1967-12-29 Publication of FR1507409A publication Critical patent/FR1507409A/fr

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Static Random-Access Memory (AREA)

FR89530A 1965-12-30 1966-12-30 Perfectionnements aux systèmes de mémoire Expired FR1507409A (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US51770165A	1965-12-30	1965-12-30
US517554A US3275996A (en)	1965-12-30	1965-12-30	Driver-sense circuit arrangement

Publications (1)

Publication Number	Publication Date
FR1507409A true FR1507409A (fr)	1967-12-29

Family

ID=27059175

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
FR89111A Expired FR1508422A (fr)	1965-12-30	1966-12-28	Perfectionnements aux systèmes de mémoire
FR89530A Expired FR1507409A (fr)	1965-12-30	1966-12-30	Perfectionnements aux systèmes de mémoire

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
FR89111A Expired FR1508422A (fr)	1965-12-30	1966-12-28	Perfectionnements aux systèmes de mémoire

Country Status (4)

Country	Link
US (2)	US3440444A (fr)
FR (2)	FR1508422A (fr)
GB (2)	GB1163788A (fr)
SE (3)	SE323427B (fr)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3510849A (en) *	1965-08-09	1970-05-05	Nippon Electric Co	Memory devices of the semiconductor type having high-speed readout means
US3414740A (en) *	1965-09-08	1968-12-03	Ibm	Integrated insulated gate field effect logic circuitry
US3493932A (en) *	1966-01-17	1970-02-03	Ibm	Integrated switching matrix comprising field-effect devices
US3539839A (en) *	1966-01-31	1970-11-10	Nippon Electric Co	Semiconductor memory device
US3483400A (en) *	1966-06-15	1969-12-09	Sharp Kk	Flip-flop circuit
US3460094A (en) *	1967-01-16	1969-08-05	Rca Corp	Integrated memory system
US3521242A (en) *	1967-05-02	1970-07-21	Rca Corp	Complementary transistor write and ndro for memory cell
US3538348A (en) *	1967-07-10	1970-11-03	Motorola Inc	Sense-write circuits for coupling current mode logic circuits to saturating type memory cells
USRE30744E (en) *	1967-08-22	1981-09-15	Bunker Ramo Corporation	Digital memory apparatus
US3518635A (en) *	1967-08-22	1970-06-30	Bunker Ramo	Digital memory apparatus
US3533087A (en) *	1967-09-15	1970-10-06	Rca Corp	Memory employing transistor storage cells
US3564299A (en) *	1969-01-16	1971-02-16	Gen Instrument Corp	Clock generator
US3582975A (en) *	1969-04-17	1971-06-01	Bell Telephone Labor Inc	Gateable coupling circuit
BE759081A (nl) *	1969-11-24	1971-05-18	Shell Int Research	Transistoromkeerschakeling
JPS5126015B1 (fr) *	1969-12-19	1976-08-04
US3657568A (en) *	1970-01-05	1972-04-18	Hamilton Watch Co	Pulse shaping circuit using complementary mos devices
US3601629A (en) *	1970-02-06	1971-08-24	Westinghouse Electric Corp	Bidirectional data line driver circuit for a mosfet memory
US3659118A (en) *	1970-03-27	1972-04-25	Rca Corp	Decoder circuit employing switches such as field-effect devices
US3628070A (en) *	1970-04-22	1971-12-14	Rca Corp	Voltage reference and voltage level sensing circuit
US3680061A (en) *	1970-04-30	1972-07-25	Ncr Co	Integrated circuit bipolar random access memory system with low stand-by power consumption
US3656118A (en) *	1970-05-01	1972-04-11	Cogar Corp	Read/write system and circuit for semiconductor memories
US3676705A (en) *	1970-05-11	1972-07-11	Rca Corp	Logic circuits employing switches such as field-effect devices
US3704454A (en) *	1970-05-18	1972-11-28	Electronic Arrays	Accessing system for and in integrated circuit type memories
US3601637A (en) *	1970-06-25	1971-08-24	North American Rockwell	Minor clock generator using major clock signals
US3685025A (en) *	1970-06-25	1972-08-15	Richard W Bryant	Sense amplifier/bit driver for semiconductor memories
US3693170A (en) *	1970-08-05	1972-09-19	Marconi Co Ltd	Memory cells
US3646369A (en) *	1970-08-28	1972-02-29	North American Rockwell	Multiphase field effect transistor dc driver
US3629612A (en) *	1970-09-18	1971-12-21	Rca Corp	Operation of field-effect transistor circuit having substantial distributed capacitance
US3638039A (en) *	1970-09-18	1972-01-25	Rca Corp	Operation of field-effect transistor circuits having substantial distributed capacitance
US3702926A (en) *	1970-09-30	1972-11-14	Ibm	Fet decode circuit
US3701125A (en) *	1970-12-31	1972-10-24	Ibm	Self-contained magnetic bubble domain memory chip
US3676702A (en) *	1971-01-04	1972-07-11	Rca Corp	Comparator circuit
US3772658A (en) *	1971-02-05	1973-11-13	Us Army	Electronic memory having a page swapping capability
US3765002A (en) *	1971-04-20	1973-10-09	Siemens Ag	Accelerated bit-line discharge of a mosfet memory
US3708788A (en) *	1971-11-11	1973-01-02	Ibm	Associative memory cell driver and sense amplifier circuit
US3838295A (en) *	1973-02-05	1974-09-24	Lockheed Electronics Co	Ratioless mos sense amplifier
US3879621A (en) *	1973-04-18	1975-04-22	Ibm	Sense amplifier
DE3528525A1 (de) *	1985-08-08	1987-02-19	Goldwell Gmbh	Doppelkammer-behaelter
US4719596A (en) *	1986-03-19	1988-01-12	International Business Machines Corporation	Register providing simultaneous reading and writing to multiple ports
US4833648A (en) *	1987-07-02	1989-05-23	Texas Instruments Incorporated	Multiport ram hybrid memory cell with fast write
US5204990A (en) *	1988-09-07	1993-04-20	Texas Instruments Incorporated	Memory cell with capacitance for single event upset protection
EP0357982B1 (fr) *	1988-09-07	1995-03-01	Texas Instruments Incorporated	Cellule de mémoire ayant un circuit de réduction de faux d'évènements uniques de dérangement
US4995001A (en) *	1988-10-31	1991-02-19	International Business Machines Corporation	Memory cell and read circuit
US7298180B2 (en) *	2005-11-17	2007-11-20	Taiwan Semiconductor Manufacturing Co., Ltd.	Latch type sense amplifier

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3067336A (en) *	1957-05-03	1962-12-04	Honeywell Regulator Co	Bistable electronic switching circuitry for manipulating digital data
US3173130A (en) *	1960-08-08	1965-03-09	Bell Telephone Labor Inc	Memory circuit
US3310686A (en) *	1963-06-14	1967-03-21	Rca Corp	Flip flip circuits utilizing set-reset dominate techniques
US3267295A (en) *	1964-04-13	1966-08-16	Rca Corp	Logic circuits

1965
- 1965-12-30 US US517701A patent/US3440444A/en not_active Expired - Lifetime
- 1965-12-30 US US517554A patent/US3275996A/en not_active Expired - Lifetime
1966
- 1966-12-21 GB GB57216/66A patent/GB1163788A/en not_active Expired
- 1966-12-21 GB GB57217/66A patent/GB1163789A/en not_active Expired
- 1966-12-28 FR FR89111A patent/FR1508422A/fr not_active Expired
- 1966-12-29 SE SE17870/66A patent/SE323427B/xx unknown
- 1966-12-29 SE SE17869/66A patent/SE334502B/xx unknown
- 1966-12-29 SE SE9737/69A patent/SE341735B/xx unknown
- 1966-12-30 FR FR89530A patent/FR1507409A/fr not_active Expired

Also Published As

Publication number	Publication date
FR1508422A (fr)	1968-01-05
SE341735B (fr)	1972-01-10
SE334502B (fr)	1971-04-26
DE1499857A1 (de)	1970-12-23
GB1163788A (en)	1969-09-10
US3440444A (en)	1969-04-22
GB1163789A (en)	1969-09-10
SE323427B (fr)	1970-05-04
DE1499857B2 (de)	1972-11-23
US3275996A (en)	1966-09-27
DE1499856A1 (de)	1970-02-12
DE1499856B2 (de)	1972-06-15

Publication	Publication Date	Title
FR1507409A (fr)	1967-12-29	Perfectionnements aux systèmes de mémoire
FR1453946A (fr)	1966-07-22	Système de mémoire
FR1497338A (fr)	1967-10-06	Mémoire
FR1497335A (fr)	1967-10-06	Système de mémoire perfectionné
FR1526571A (fr)	1968-05-24	Système de mémoire
FR1465739A (fr)	1967-01-13	Système de mémoire associative
FR1501433A (fr)	1967-11-10	Mémoire cryoélectrique
FR1435022A (fr)	1966-04-15	Perfectionnements aux systèmes de télécommunications
FR1420781A (fr)	1965-12-10	Systèmes de mémoires magnétiques
FR1455257A (fr)	1966-04-01	Mémoire
FR90671E (fr)	1968-01-26	Perfectionnements aux systèmes de radio-localisation
FR1386484A (fr)	1965-01-22	Perfectionnements aux systèmes de radio-localisation
FR1370935A (fr)	1964-08-28	Perfectionnements aux systèmes de radar
FR1505907A (fr)	1967-12-15	Perfectionnements aux systèmes de bobinage
FR1457600A (fr)	1966-01-24	Perfectionnements aux systèmes de radio-localisation
FR1360800A (fr)	1964-05-15	Perfectionnements aux systèmes radar
FR1496441A (fr)	1967-09-29	Perfectionnements aux systèmes téléphoniques
FR1426654A (fr)	1966-01-28	Systèmes hydrauliques perfectionnés
FR1433804A (fr)	1966-04-01	Perfectionnements aux systèmes de radar
FR1443416A (fr)	1966-06-24	Perfectionnements aux systèmes électroacoustiques
FR1479359A (fr)	1967-05-05	Perfectionnements apportés aux systèmes de casiers superposables
FR1489743A (fr)	1967-07-28	Perfectionnements aux systèmes de radio-localisation
FR1381455A (fr)	1964-12-14	Perfectionnements aux systèmes de radio-localisation
FR1487216A (fr)	1967-06-30	Perfectionnements aux systèmes téléphoniques
FR1496017A (fr)	1967-09-22	Perfectionnements aux systèmes téléphoniques