Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
  • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
  • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
  • G01S1/00—Beacons or beacon systems transmitting signals having a characteristic or characteristics capable of being detected by non-directional receivers and defining directions, positions, or position lines fixed relatively to the beacon transmitters; Receivers co-operating therewith
  • G01S1/02—Beacons or beacon systems transmitting signals having a characteristic or characteristics capable of being detected by non-directional receivers and defining directions, positions, or position lines fixed relatively to the beacon transmitters; Receivers co-operating therewith using radio waves
  • G01S1/08—Systems for determining direction or position line
  • G01S1/44—Rotating or oscillating beam beacons defining directions in the plane of rotation or oscillation
  • G01S1/54—Narrow-beam systems producing at a receiver a pulse-type envelope signal of the carrier wave of the beam, the timing of which is dependent upon the angle between the direction of the receiver from the beacon and a reference direction from the beacon; Overlapping broad beam systems defining a narrow zone and producing at a receiver a pulse-type envelope signal of the carrier wave of the beam, the timing of which is dependent upon the angle between the direction of the receiver from the beacon and a reference direction from the beacon
  • G01S1/58—Narrow-beam systems producing at a receiver a pulse-type envelope signal of the carrier wave of the beam, the timing of which is dependent upon the angle between the direction of the receiver from the beacon and a reference direction from the beacon; Overlapping broad beam systems defining a narrow zone and producing at a receiver a pulse-type envelope signal of the carrier wave of the beam, the timing of which is dependent upon the angle between the direction of the receiver from the beacon and a reference direction from the beacon wherein a characteristic of the beam transmitted or of an auxiliary signal is varied in time synchronously with rotation or oscillation of the beam
  • G01S1/64—Varying pulse timing, e.g. varying interval between pulses radiated in pairs
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
  • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
  • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03G—CONTROL OF AMPLIFICATION
  • H03G1/00—Details of arrangements for controlling amplification
  • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
  • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
  • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H11/00—Networks using active elements
  • H03H11/02—Multiple-port networks
  • H03H11/24—Frequency-independent attenuators
  • H03H11/245—Frequency-independent attenuators using field-effect transistor
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
  • H03H9/30—Time-delay networks
  • H03H9/36—Time-delay networks with non-adjustable delay time
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
  • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
  • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Power Engineering (AREA)
• Acoustics & Sound (AREA)
• Computer Networks & Wireless Communication (AREA)
• General Physics & Mathematics (AREA)
• Radar, Positioning & Navigation (AREA)
• Remote Sensing (AREA)

Priority Applications (1)

Applications Claiming Priority (4)

Publications (1)

Family

ID=27445728

Family Applications (1)

Country Status (1)

Cited By (2)

• 1964
  • 1964-03-05 FR FR966198A patent/FR1392748A/en not_active Expired

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