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FR1386650A - Dispositif semiconducteur - Google Patents

Dispositif semiconducteur

Info

Publication number
FR1386650A
FR1386650A FR962077A FR962077A FR1386650A FR 1386650 A FR1386650 A FR 1386650A FR 962077 A FR962077 A FR 962077A FR 962077 A FR962077 A FR 962077A FR 1386650 A FR1386650 A FR 1386650A
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR962077A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of FR1386650A publication Critical patent/FR1386650A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01019—Potassium [K]
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    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/014—Solder alloys
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12035—Zener diode
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR962077A 1963-01-30 1964-01-30 Dispositif semiconducteur Expired FR1386650A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25503763A 1963-01-30 1963-01-30

Publications (1)

Publication Number Publication Date
FR1386650A true FR1386650A (fr) 1965-01-22

Family

ID=22966575

Family Applications (1)

Application Number Title Priority Date Filing Date
FR962077A Expired FR1386650A (fr) 1963-01-30 1964-01-30 Dispositif semiconducteur

Country Status (5)

Country Link
US (1) US3491272A (fr)
DE (1) DE1281584B (fr)
FR (1) FR1386650A (fr)
GB (1) GB1052661A (fr)
SE (3) SE371043B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437886A (en) * 1965-03-25 1969-04-08 Asea Ab Thyristor with positively bevelled junctions
FR2025421A1 (fr) * 1968-12-05 1970-09-11 Westinghouse Electric Corp

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1589496A1 (de) * 1967-01-26 1970-03-26 Bbc Brown Boveri & Cie Halbleiterelement mit abgeschraegter Seitenflaeche und Verfahren zum Herstellen
US3628107A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with peripheral protective junction
US3800190A (en) * 1970-11-02 1974-03-26 Bbc Brown Boveri & Cie Cooling system for power semiconductor devices
US3943547A (en) * 1970-12-26 1976-03-09 Hitachi, Ltd. Semiconductor device
DE2340107A1 (de) * 1973-07-06 1975-01-23 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
NL180265C (nl) * 1976-06-21 1987-01-16 Gen Electric Halfgeleiderinrichting voor hoge spanning.
EP0303046B1 (fr) * 1987-08-11 1992-01-02 BBC Brown Boveri AG Thyristor à commande d'extinction
DE4209220A1 (de) * 1992-03-21 1993-09-23 Deutsche Forsch Luft Raumfahrt Ablagerungsfreier brenner
US5398630A (en) * 1992-11-10 1995-03-21 Us Shipbuilding Corporation, Inc. Simplified midbody section for marine vessels and method and apparatus for construction
DE19981343B4 (de) * 1998-07-13 2004-03-18 Infineon Technologies Ag Asymmetrisch sperrendes Leistungshalbleiterbauelement
US7268339B1 (en) * 2005-09-27 2007-09-11 Radiation Monitoring Devices, Inc. Large area semiconductor detector with internal gain
US10483175B2 (en) * 2015-12-04 2019-11-19 Mitsubishi Electric Corporation Power semiconductor device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA509126A (fr) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Dispositifs translateurs de semi-conducteurs
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
NL113266C (fr) * 1957-01-18
US2989424A (en) * 1958-03-31 1961-06-20 Westinghouse Electric Corp Method of providing an oxide protective coating for semiconductors
NL240714A (fr) * 1958-07-02
NL242556A (fr) * 1958-08-27
FR1228285A (fr) * 1959-03-11 1960-08-29 Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes
FR1243865A (fr) * 1959-09-08 1960-10-21 Telecommunications Sa Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium
FR1273633A (fr) * 1959-11-21 1961-10-13 Siemens Ag Procédé d'obtention d'éléments semi-conducteurs
US3260634A (en) * 1961-02-17 1966-07-12 Motorola Inc Method of etching a semiconductor wafer to provide tapered dice
US3189799A (en) * 1961-06-14 1965-06-15 Microwave Ass Semiconductor devices and method of fabricating them
NL280641A (fr) * 1961-07-07
US3255055A (en) * 1963-03-20 1966-06-07 Hoffman Electronics Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437886A (en) * 1965-03-25 1969-04-08 Asea Ab Thyristor with positively bevelled junctions
DE1539636B1 (de) * 1965-03-25 1971-01-14 Allmaenna Svenska Elek Ska Ab Als Thyristor ausgebildetes Halbleiterbauelement mt profilierter Randzone
FR2025421A1 (fr) * 1968-12-05 1970-09-11 Westinghouse Electric Corp

Also Published As

Publication number Publication date
DE1281584B (de) 1968-10-31
SE371043B (fr) 1974-11-04
GB1052661A (fr) 1900-01-01
US3491272A (en) 1970-01-20
SE363428B (fr) 1974-01-14
SE325959B (fr) 1970-07-13

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