FR1385657A - Diode génératrice d'impulsions - Google Patents
Diode génératrice d'impulsionsInfo
- Publication number
- FR1385657A FR1385657A FR956856A FR956856A FR1385657A FR 1385657 A FR1385657 A FR 1385657A FR 956856 A FR956856 A FR 956856A FR 956856 A FR956856 A FR 956856A FR 1385657 A FR1385657 A FR 1385657A
- Authority
- FR
- France
- Prior art keywords
- pulse generator
- generator diode
- diode
- pulse
- generator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR956856A FR1385657A (fr) | 1962-12-17 | 1963-12-11 | Diode génératrice d'impulsions |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US245041A US3337779A (en) | 1962-12-17 | 1962-12-17 | Snap-off diode containing recombination impurities |
FR956856A FR1385657A (fr) | 1962-12-17 | 1963-12-11 | Diode génératrice d'impulsions |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1385657A true FR1385657A (fr) | 1965-01-15 |
Family
ID=26204823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR956856A Expired FR1385657A (fr) | 1962-12-17 | 1963-12-11 | Diode génératrice d'impulsions |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1385657A (fr) |
-
1963
- 1963-12-11 FR FR956856A patent/FR1385657A/fr not_active Expired
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