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FR1369631A - Procédé de fabrication de dispositifs à semi-conducteurs - Google Patents

Procédé de fabrication de dispositifs à semi-conducteurs

Info

Publication number
FR1369631A
FR1369631A FR947070A FR947070A FR1369631A FR 1369631 A FR1369631 A FR 1369631A FR 947070 A FR947070 A FR 947070A FR 947070 A FR947070 A FR 947070A FR 1369631 A FR1369631 A FR 1369631A
Authority
FR
France
Prior art keywords
semiconductor device
manufacturing process
device manufacturing
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR947070A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR1369631A publication Critical patent/FR1369631A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441Deposition of conductive or insulating materials for electrodes
    • H01L21/445Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/38Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/383Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a gaseous phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/38Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/388Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/973Substrate orientation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Recrystallisation Techniques (AREA)
FR947070A 1962-09-14 1963-09-10 Procédé de fabrication de dispositifs à semi-conducteurs Expired FR1369631A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1962S0081455 DE1194504C2 (de) 1962-09-14 1962-09-14 Verfahren zur Herstellung von Halbleiter-anordnungen

Publications (1)

Publication Number Publication Date
FR1369631A true FR1369631A (fr) 1964-08-14

Family

ID=7509624

Family Applications (1)

Application Number Title Priority Date Filing Date
FR947070A Expired FR1369631A (fr) 1962-09-14 1963-09-10 Procédé de fabrication de dispositifs à semi-conducteurs

Country Status (6)

Country Link
US (1) US3386893A (fr)
CH (1) CH412117A (fr)
DE (1) DE1194504C2 (fr)
FR (1) FR1369631A (fr)
GB (1) GB1001693A (fr)
NL (1) NL297836A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3612960A (en) * 1968-10-15 1971-10-12 Tokyo Shibaura Electric Co Semiconductor device
US3753804A (en) * 1971-08-31 1973-08-21 Philips Corp Method of manufacturing a semiconductor device
EP0080844A1 (fr) * 1981-11-25 1983-06-08 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Préparation de produits d'addition utilisables dans la fabrication de matériaux à base de composés semi-conducteurs

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980594A (en) * 1954-06-01 1961-04-18 Rca Corp Methods of making semi-conductor devices
US2825667A (en) * 1955-05-10 1958-03-04 Rca Corp Methods of making surface alloyed semiconductor devices
US2814589A (en) * 1955-08-02 1957-11-26 Bell Telephone Labor Inc Method of plating silicon
GB861679A (en) * 1956-02-24 1961-02-22 Post Office Improvements in or relating to methods for the treatment of semi-conducting materialand semi-conductor junction devices
US2873232A (en) * 1956-06-18 1959-02-10 Philco Corp Method of jet plating
BE562375A (fr) * 1957-01-02
US2971869A (en) * 1957-08-27 1961-02-14 Motorola Inc Semiconductor assembly and method of forming same
NL133277C (fr) * 1959-01-12
NL247746A (fr) * 1959-01-27
US2978661A (en) * 1959-03-03 1961-04-04 Battelle Memorial Institute Semiconductor devices
US3106764A (en) * 1959-04-20 1963-10-15 Westinghouse Electric Corp Continuous process for producing semiconductor devices
US3075892A (en) * 1959-09-15 1963-01-29 Westinghouse Electric Corp Process for making semiconductor devices
NL267219A (fr) * 1960-07-21
NL279119A (fr) * 1961-06-01
US3152023A (en) * 1961-10-25 1964-10-06 Cutler Hammer Inc Method of making semiconductor devices

Also Published As

Publication number Publication date
CH412117A (de) 1966-04-30
NL297836A (fr)
DE1194504C2 (de) 1966-03-03
DE1194504B (de) 1965-06-10
GB1001693A (en) 1965-08-18
US3386893A (en) 1968-06-04

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