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FR1341477A - Procédé pour réaliser deux électrodes étroitement juxtaposées sur un corps semi-conducteur - Google Patents

Procédé pour réaliser deux électrodes étroitement juxtaposées sur un corps semi-conducteur

Info

Publication number
FR1341477A
FR1341477A FR838225A FR838225A FR1341477A FR 1341477 A FR1341477 A FR 1341477A FR 838225 A FR838225 A FR 838225A FR 838225 A FR838225 A FR 838225A FR 1341477 A FR1341477 A FR 1341477A
Authority
FR
France
Prior art keywords
making
semiconductor body
closely juxtaposed
electrodes closely
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR838225A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES64847A external-priority patent/DE1113521B/de
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Priority to FR838225A priority Critical patent/FR1341477A/fr
Priority claimed from DES84300A external-priority patent/DE1222168B/de
Application granted granted Critical
Publication of FR1341477A publication Critical patent/FR1341477A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR838225A 1959-09-10 1960-09-09 Procédé pour réaliser deux électrodes étroitement juxtaposées sur un corps semi-conducteur Expired FR1341477A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR838225A FR1341477A (fr) 1959-09-10 1960-09-09 Procédé pour réaliser deux électrodes étroitement juxtaposées sur un corps semi-conducteur

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES64847A DE1113521B (de) 1959-09-10 1959-09-10 Verfahren und Vorrichtung zum Erzeugen zweier dicht nebeneinander-liegender Elektroden an Halbleiterkoerpern
FR838225A FR1341477A (fr) 1959-09-10 1960-09-09 Procédé pour réaliser deux électrodes étroitement juxtaposées sur un corps semi-conducteur
DES84300A DE1222168B (de) 1959-09-10 1963-03-22 Verfahren zum Erzeugen mindestens zweier dicht nebeneinanderliegender Elektroden aufHalbleiterkoerpern

Publications (1)

Publication Number Publication Date
FR1341477A true FR1341477A (fr) 1963-11-02

Family

ID=27212668

Family Applications (1)

Application Number Title Priority Date Filing Date
FR838225A Expired FR1341477A (fr) 1959-09-10 1960-09-09 Procédé pour réaliser deux électrodes étroitement juxtaposées sur un corps semi-conducteur

Country Status (1)

Country Link
FR (1) FR1341477A (fr)

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