FR1314962A - High gain transistor - Google Patents
High gain transistorInfo
- Publication number
- FR1314962A FR1314962A FR888198A FR888198A FR1314962A FR 1314962 A FR1314962 A FR 1314962A FR 888198 A FR888198 A FR 888198A FR 888198 A FR888198 A FR 888198A FR 1314962 A FR1314962 A FR 1314962A
- Authority
- FR
- France
- Prior art keywords
- high gain
- gain transistor
- transistor
- gain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR888198A FR1314962A (en) | 1961-02-15 | 1962-02-15 | High gain transistor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US89498A US3173069A (en) | 1961-02-15 | 1961-02-15 | High gain transistor |
FR888198A FR1314962A (en) | 1961-02-15 | 1962-02-15 | High gain transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1314962A true FR1314962A (en) | 1963-01-11 |
Family
ID=26194400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR888198A Expired FR1314962A (en) | 1961-02-15 | 1962-02-15 | High gain transistor |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1314962A (en) |
-
1962
- 1962-02-15 FR FR888198A patent/FR1314962A/en not_active Expired
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