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FR1302043A - Appareil pour provoquer la croissance de compositions homogènes solides - Google Patents

Appareil pour provoquer la croissance de compositions homogènes solides

Info

Publication number
FR1302043A
FR1302043A FR870487A FR870487A FR1302043A FR 1302043 A FR1302043 A FR 1302043A FR 870487 A FR870487 A FR 870487A FR 870487 A FR870487 A FR 870487A FR 1302043 A FR1302043 A FR 1302043A
Authority
FR
France
Prior art keywords
inducing
growth
homogeneous compositions
solid homogeneous
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR870487A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Corp
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Priority to FR870487A priority Critical patent/FR1302043A/fr
Application granted granted Critical
Publication of FR1302043A publication Critical patent/FR1302043A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D9/00—Level control, e.g. controlling quantity of material stored in vessel
    • G05D9/12—Level control, e.g. controlling quantity of material stored in vessel characterised by the use of electric means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
FR870487A 1961-08-09 1961-08-09 Appareil pour provoquer la croissance de compositions homogènes solides Expired FR1302043A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR870487A FR1302043A (fr) 1961-08-09 1961-08-09 Appareil pour provoquer la croissance de compositions homogènes solides

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR870487A FR1302043A (fr) 1961-08-09 1961-08-09 Appareil pour provoquer la croissance de compositions homogènes solides

Publications (1)

Publication Number Publication Date
FR1302043A true FR1302043A (fr) 1962-08-24

Family

ID=8761045

Family Applications (1)

Application Number Title Priority Date Filing Date
FR870487A Expired FR1302043A (fr) 1961-08-09 1961-08-09 Appareil pour provoquer la croissance de compositions homogènes solides

Country Status (1)

Country Link
FR (1) FR1302043A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342560A (en) * 1963-10-28 1967-09-19 Siemens Ag Apparatus for pulling semiconductor crystals
DE1294939B (de) * 1962-12-21 1969-05-14 Siemens Ag Verfahren und Vorrichtung zur Herstellung von aus Halbleitermaterial bestehenden Einkristallen durch Ziehen aus einer Schmelze
EP0170856A1 (fr) * 1984-07-06 1986-02-12 General Signal Corporation Procédé pour la croissance de monocristaux semi-conducteurs à partir de creusets peu profonds selon le procédé Czochralski
FR2592064A1 (fr) * 1985-12-23 1987-06-26 Elf Aquitaine Dispositif pour former un bain d'un materiau semi-conducteur fondu afin d'y faire croitre un element cristallin

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1294939B (de) * 1962-12-21 1969-05-14 Siemens Ag Verfahren und Vorrichtung zur Herstellung von aus Halbleitermaterial bestehenden Einkristallen durch Ziehen aus einer Schmelze
US3342560A (en) * 1963-10-28 1967-09-19 Siemens Ag Apparatus for pulling semiconductor crystals
EP0170856A1 (fr) * 1984-07-06 1986-02-12 General Signal Corporation Procédé pour la croissance de monocristaux semi-conducteurs à partir de creusets peu profonds selon le procédé Czochralski
FR2592064A1 (fr) * 1985-12-23 1987-06-26 Elf Aquitaine Dispositif pour former un bain d'un materiau semi-conducteur fondu afin d'y faire croitre un element cristallin
EP0230617A1 (fr) * 1985-12-23 1987-08-05 COMPAGNIE GENERALE D'ELECTRICITE Société anonyme dite: Dispositif pour former un bain d'un matériau semi-conducteur fond afin d'y faire croître un élément cristallin

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