FR1281944A - Dispositif à semi-conducteur à plusieurs bornes - Google Patents
Dispositif à semi-conducteur à plusieurs bornesInfo
- Publication number
- FR1281944A FR1281944A FR843477A FR843477A FR1281944A FR 1281944 A FR1281944 A FR 1281944A FR 843477 A FR843477 A FR 843477A FR 843477 A FR843477 A FR 843477A FR 1281944 A FR1281944 A FR 1281944A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- terminal semiconductor
- terminal
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/676—Combinations of only thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85211559A | 1959-11-10 | 1959-11-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1281944A true FR1281944A (fr) | 1962-01-19 |
Family
ID=25312530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR843477A Expired FR1281944A (fr) | 1959-11-10 | 1960-11-09 | Dispositif à semi-conducteur à plusieurs bornes |
Country Status (4)
Country | Link |
---|---|
CH (1) | CH389103A (fr) |
DE (1) | DE1190582C2 (fr) |
FR (1) | FR1281944A (fr) |
GB (1) | GB918816A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1212642B (de) * | 1962-05-29 | 1966-03-17 | Siemens Ag | Halbleiterbauelement, insbesondere Mesatransistor, mit zwei moeglichst kleinflaechigen Elektroden mit parallelen Kanten und Verfahren zum Herstellen |
DE1278016B (de) * | 1963-11-16 | 1968-09-19 | Siemens Ag | Halbleiterbauelement mit einem einkristallinen Halbleiterkoerper |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1212643B (de) * | 1963-10-26 | 1966-03-17 | Siemens Ag | Steuerbares Halbleiterbauelement vom pnpn-Typ und Verfahren zum Herstellen |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB807582A (en) * | 1954-12-27 | 1959-01-21 | Clevite Corp | High power junction transistor |
FR1163963A (fr) * | 1955-11-16 | 1958-10-03 | Sperry Rand Corp | Circuit de commande de transistron avec transistron à pointes à plusieurs émetteurs |
BE556305A (fr) * | 1956-04-18 | |||
NL233303A (fr) * | 1957-11-30 |
-
1960
- 1960-11-09 FR FR843477A patent/FR1281944A/fr not_active Expired
- 1960-11-10 DE DE1960W0028879 patent/DE1190582C2/de not_active Expired
- 1960-11-10 CH CH1256960A patent/CH389103A/de unknown
-
1961
- 1961-05-11 GB GB17219/61A patent/GB918816A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1212642B (de) * | 1962-05-29 | 1966-03-17 | Siemens Ag | Halbleiterbauelement, insbesondere Mesatransistor, mit zwei moeglichst kleinflaechigen Elektroden mit parallelen Kanten und Verfahren zum Herstellen |
DE1212642C2 (de) * | 1962-05-29 | 1966-10-13 | Siemens Ag | Halbleiterbauelement, insbesondere Mesatransistor, mit zwei moeglichst kleinflaechigen Elektroden mit parallelen Kanten und Verfahren zum Herstellen |
DE1278016B (de) * | 1963-11-16 | 1968-09-19 | Siemens Ag | Halbleiterbauelement mit einem einkristallinen Halbleiterkoerper |
Also Published As
Publication number | Publication date |
---|---|
DE1190582B (de) | 1965-04-08 |
GB918816A (en) | 1963-02-20 |
CH389103A (de) | 1965-03-15 |
DE1190582C2 (de) | 1965-12-09 |
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