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FR1281944A - Dispositif à semi-conducteur à plusieurs bornes - Google Patents

Dispositif à semi-conducteur à plusieurs bornes

Info

Publication number
FR1281944A
FR1281944A FR843477A FR843477A FR1281944A FR 1281944 A FR1281944 A FR 1281944A FR 843477 A FR843477 A FR 843477A FR 843477 A FR843477 A FR 843477A FR 1281944 A FR1281944 A FR 1281944A
Authority
FR
France
Prior art keywords
semiconductor device
terminal semiconductor
terminal
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR843477A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of FR1281944A publication Critical patent/FR1281944A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676Combinations of only thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR843477A 1959-11-10 1960-11-09 Dispositif à semi-conducteur à plusieurs bornes Expired FR1281944A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85211559A 1959-11-10 1959-11-10

Publications (1)

Publication Number Publication Date
FR1281944A true FR1281944A (fr) 1962-01-19

Family

ID=25312530

Family Applications (1)

Application Number Title Priority Date Filing Date
FR843477A Expired FR1281944A (fr) 1959-11-10 1960-11-09 Dispositif à semi-conducteur à plusieurs bornes

Country Status (4)

Country Link
CH (1) CH389103A (fr)
DE (1) DE1190582C2 (fr)
FR (1) FR1281944A (fr)
GB (1) GB918816A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1212642B (de) * 1962-05-29 1966-03-17 Siemens Ag Halbleiterbauelement, insbesondere Mesatransistor, mit zwei moeglichst kleinflaechigen Elektroden mit parallelen Kanten und Verfahren zum Herstellen
DE1278016B (de) * 1963-11-16 1968-09-19 Siemens Ag Halbleiterbauelement mit einem einkristallinen Halbleiterkoerper

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1212643B (de) * 1963-10-26 1966-03-17 Siemens Ag Steuerbares Halbleiterbauelement vom pnpn-Typ und Verfahren zum Herstellen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB807582A (en) * 1954-12-27 1959-01-21 Clevite Corp High power junction transistor
FR1163963A (fr) * 1955-11-16 1958-10-03 Sperry Rand Corp Circuit de commande de transistron avec transistron à pointes à plusieurs émetteurs
BE556305A (fr) * 1956-04-18
NL233303A (fr) * 1957-11-30

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1212642B (de) * 1962-05-29 1966-03-17 Siemens Ag Halbleiterbauelement, insbesondere Mesatransistor, mit zwei moeglichst kleinflaechigen Elektroden mit parallelen Kanten und Verfahren zum Herstellen
DE1212642C2 (de) * 1962-05-29 1966-10-13 Siemens Ag Halbleiterbauelement, insbesondere Mesatransistor, mit zwei moeglichst kleinflaechigen Elektroden mit parallelen Kanten und Verfahren zum Herstellen
DE1278016B (de) * 1963-11-16 1968-09-19 Siemens Ag Halbleiterbauelement mit einem einkristallinen Halbleiterkoerper

Also Published As

Publication number Publication date
DE1190582B (de) 1965-04-08
GB918816A (en) 1963-02-20
CH389103A (de) 1965-03-15
DE1190582C2 (de) 1965-12-09

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