FR1248262A - Redresseur au carbure de silicium - Google Patents

Redresseur au carbure de silicium

Info

Publication number: FR1248262A
Authority: FR; France
Prior art keywords: silicon carbide; rectifier; carbide rectifier; silicon; carbide
Prior art date: 1959-02-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

FR817634A

Other languages

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

CBS Corp

Original Assignee

Westinghouse Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1959-02-05

Filing date

1960-02-04

Publication date

1960-12-09

1960-02-04 Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp

1960-12-09 Application granted granted Critical

1960-12-09 Publication of FR1248262A publication Critical patent/FR1248262A/fr

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/051—Manufacture or treatment of Schottky diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide

FR817634A 1959-02-05 1960-02-04 Redresseur au carbure de silicium Expired FR1248262A (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US791337A US2937324A (en)	1959-02-05	1959-02-05	Silicon carbide rectifier

Publications (1)

Publication Number	Publication Date
FR1248262A true FR1248262A (fr)	1960-12-09

Family

ID=25153400

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR817634A Expired FR1248262A (fr)	1959-02-05	1960-02-04	Redresseur au carbure de silicium

Country Status (3)

Country	Link
US (1)	US2937324A (fr)
FR (1)	FR1248262A (fr)
GB (1)	GB878235A (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE560551A (fr) *	1956-09-05
NL256369A (fr) *	1959-09-30	1900-01-01
US3078328A (en) *	1959-11-12	1963-02-19	Texas Instruments Inc	Solar cell
NL257217A (fr) *	1959-12-07
US3197839A (en) *	1959-12-11	1965-08-03	Gen Electric	Method of fabricating semiconductor devices
US3114864A (en) *	1960-02-08	1963-12-17	Fairchild Camera Instr Co	Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions
US3221222A (en) *	1960-05-20	1965-11-30	F H Peavey & Company	Semi-conductor devices
NL268758A (fr) *	1960-09-20
US3160534A (en) *	1960-10-03	1964-12-08	Gen Telephone & Elect	Method of making tunnel diodes
US3188536A (en) *	1960-11-14	1965-06-08	Gen Motors Corp	Silicon rectifier encapsulation
US3214654A (en) *	1961-02-01	1965-10-26	Rca Corp	Ohmic contacts to iii-v semiconductive compound bodies
US3254280A (en) *	1963-05-29	1966-05-31	Westinghouse Electric Corp	Silicon carbide unipolar transistor
US3271637A (en) *	1963-07-22	1966-09-06	Nasa	Gaas solar detector using manganese as a doping agent
GB1052587A (fr) *	1964-06-30
US3377210A (en) *	1965-03-25	1968-04-09	Norton Co	Process of forming silicon carbide diode by growing separate p and n layers together
US3368125A (en) *	1965-08-25	1968-02-06	Rca Corp	Semiconductor gallium arsenide with germanium connecting layer
US3447236A (en) *	1966-02-11	1969-06-03	Western Electric Co	Method of bonding an electrical part to an electrical contact
US3462321A (en) *	1966-04-27	1969-08-19	Nat Res Corp	Process of epitaxial growth of silicon carbide
US3654694A (en) *	1969-04-28	1972-04-11	Hughes Aircraft Co	Method for bonding contacts to and forming alloy sites on silicone carbide
US3931673A (en) *	1969-10-08	1976-01-13	The United States Of America As Represented By The United States Energy Research And Development Administration	Aluminum for bonding Si-Ge alloys to graphite
DE2658304C2 (de) *	1975-12-24	1984-12-20	Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa	Halbleitervorrichtung
US4161743A (en) *	1977-03-28	1979-07-17	Tokyo Shibaura Electric Co., Ltd.	Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
JPS58223678A (ja) *	1982-06-16	1983-12-26	株式会社日立製作所	金属化層を有するＳｉＣ焼結体とその製法
US4596354A (en) *	1985-07-03	1986-06-24	The United States Of America As Represented By The United States Department Of Energy	Oxidation resistant filler metals for direct brazing of structural ceramics
US4947218A (en) *	1987-11-03	1990-08-07	North Carolina State University	P-N junction diodes in silicon carbide
US5061972A (en) *	1988-12-14	1991-10-29	Cree Research, Inc.	Fast recovery high temperature rectifying diode formed in silicon carbide
US6204160B1 (en)	1999-02-22	2001-03-20	The United States Of America As Represented By The Secretary Of The Navy	Method for making electrical contacts and junctions in silicon carbide

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2273704A (en) *	1935-10-10	1942-02-17	Bell Telephone Labor Inc	Electrical conducting material

1959
- 1959-02-05 US US791337A patent/US2937324A/en not_active Expired - Lifetime
1960
- 1960-02-02 GB GB3609/60A patent/GB878235A/en not_active Expired
- 1960-02-04 FR FR817634A patent/FR1248262A/fr not_active Expired

Also Published As

Publication number	Publication date
GB878235A (en)	1961-09-27
US2937324A (en)	1960-05-17

Publication	Publication Date	Title
FR1248262A (fr)	1960-12-09	Redresseur au carbure de silicium
FR1115845A (fr)	1956-04-30	Perfectionnements aux éléments redresseurs au silicium
CH379645A (de)	1964-07-15	Halbleitergleichrichteranlage
CH361864A (fr)	1962-05-15	Dispositif semi-conducteur au silicium
FR1278241A (fr)	1961-12-08	Silicium du type nu uniforme
CH481842A (de)	1969-11-30	Diamantkörper
BE590764A (fr)	1960-09-01	Préparation de fer au silicium fortement orienté
CH427038A (de)	1966-12-31	Steuerbarer Halbleitergleichrichter
CH385353A (de)	1964-12-15	Siliziumgleichrichter
CH396219A (de)	1965-07-31	Steuerbarer Gleichrichter
FR1226061A (fr)	1960-07-08	Diode en alliage de silicium
FR1212780A (fr)	1960-03-25	Carbure de silicium pour semi-conducteurs
FR1301223A (fr)	1962-08-10	Redresseur au silicium
FR1303254A (fr)	1962-09-07	Semi-conducteur au carbure de silicium
NL141711B (nl)	1974-03-15	Gestuurde siliciumgelijkrichter.
FR1291290A (fr)	1962-04-20	Appareil d'essai de redresseurs en silicium contrôlés
FR1365874A (fr)	1964-07-03	Redresseur contrôlé au silicium
FR1314436A (fr)	1963-01-11	Perfectionnements relatifs au rembourrage
FR1328195A (fr)	1963-05-24	Transistor au silicium
BE608558A (fr)	1962-01-15	Dispositifs en carbure de silicium
FR1275486A (fr)	1961-11-10	Transformateur-redresseur
BE591703A (fr)	1960-10-03	Tôles de fer au silicium
CH383488A (de)	1964-10-31	Halbleitergleichrichteranlage
FR1320532A (fr)	1963-03-08	Carbure de silicium submicronique
FR1275011A (fr)	1961-11-03	Agrafe