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FR1244844A - Process for producing a doped region of p conductivity in bodies consisting essentially of a single crystal semiconductor - Google Patents

Process for producing a doped region of p conductivity in bodies consisting essentially of a single crystal semiconductor

Info

Publication number
FR1244844A
FR1244844A FR815343A FR815343A FR1244844A FR 1244844 A FR1244844 A FR 1244844A FR 815343 A FR815343 A FR 815343A FR 815343 A FR815343 A FR 815343A FR 1244844 A FR1244844 A FR 1244844A
Authority
FR
France
Prior art keywords
conductivity
producing
single crystal
consisting essentially
doped region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR815343A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1244844A publication Critical patent/FR1244844A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Contacts (AREA)
FR815343A 1959-05-12 1960-01-11 Process for producing a doped region of p conductivity in bodies consisting essentially of a single crystal semiconductor Expired FR1244844A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0062963 1959-05-12

Publications (1)

Publication Number Publication Date
FR1244844A true FR1244844A (en) 1960-10-28

Family

ID=7496010

Family Applications (1)

Application Number Title Priority Date Filing Date
FR815343A Expired FR1244844A (en) 1959-05-12 1960-01-11 Process for producing a doped region of p conductivity in bodies consisting essentially of a single crystal semiconductor

Country Status (5)

Country Link
US (1) US3137595A (en)
BE (2) BE590762A (en)
CH (1) CH398797A (en)
FR (1) FR1244844A (en)
GB (1) GB911235A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3211595A (en) * 1959-11-02 1965-10-12 Hughes Aircraft Co P-type alloy bonding of semiconductors using a boron-gold alloy
US3214653A (en) * 1959-11-02 1965-10-26 Hughes Aircraft Co Gold bonded, boron containing semiconductor devices
US3339269A (en) * 1962-03-15 1967-09-05 Gen Motors Corp Method of bonding
DE2514922C2 (en) * 1975-04-05 1983-01-27 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Semiconductor component resistant to alternating thermal loads

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE500302A (en) * 1949-11-30
US2686118A (en) * 1952-12-23 1954-08-10 Ontario Research Foundation Method of making metal products directly from ores
NL224458A (en) * 1956-05-15
NL235479A (en) * 1958-02-04 1900-01-01
US2965519A (en) * 1958-11-06 1960-12-20 Bell Telephone Labor Inc Method of making improved contacts to semiconductors
US3068127A (en) * 1959-06-02 1962-12-11 Siemens Ag Method of producing a highly doped p-type zone and an appertaining contact on a semiconductor crystal

Also Published As

Publication number Publication date
BE590792A (en)
US3137595A (en) 1964-06-16
CH398797A (en) 1966-03-15
GB911235A (en) 1962-11-21
BE590762A (en)

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