FR1208294A - Procédé pour le réglage de la concentration en porteurs majoritaires dans un semicnducteur - Google Patents

Procédé pour le réglage de la concentration en porteurs majoritaires dans un semicnducteur

Info

Publication number: FR1208294A
Authority: FR; France
Prior art keywords: semiconductor; concentration; adjusting; majority carriers; majority
Prior art date: 1957-06-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

Other languages

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

AT&T Corp

Original Assignee

Western Electric Co Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1957-06-25

Filing date

1958-06-03

Publication date

1960-02-23

1958-06-03 Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc

1960-02-23 Application granted granted Critical

1960-02-23 Publication of FR1208294A publication Critical patent/FR1208294A/fr

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S420/00—Alloys or metallic compositions
- Y10S420/903—Semiconductive
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

FR1208294D 1957-06-25 1958-06-03 Procédé pour le réglage de la concentration en porteurs majoritaires dans un semicnducteur Expired FR1208294A (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US667956A US2861905A (en)	1957-06-25	1957-06-25	Process for controlling excess carrier concentration in a semiconductor

Publications (1)

Publication Number	Publication Date
FR1208294A true FR1208294A (fr)	1960-02-23

Family

ID=24680369

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR1208294D Expired FR1208294A (fr)	1957-06-25	1958-06-03	Procédé pour le réglage de la concentration en porteurs majoritaires dans un semicnducteur

Country Status (7)

Country	Link
US (1)	US2861905A (es)
BE (1)	BE567569A (es)
CH (1)	CH402425A (es)
DE (1)	DE1215658B (es)
FR (1)	FR1208294A (es)
GB (1)	GB871839A (es)
NL (2)	NL112556C (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3070465A (en) *	1957-07-26	1962-12-25	Sony Corp	Method of manufacturing a grown type semiconductor device
FR1228285A (fr) *	1959-03-11	1960-08-29		Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes
NL247854A (es) *	1960-01-28
US3248677A (en) *	1961-10-27	1966-04-26	Ibm	Temperature compensated semiconductor resistor
BE632279A (es) *	1962-05-14
DE3049376A1 (de)	1980-12-29	1982-07-29	Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen	Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze
JPS5914440B2 (ja) *	1981-09-18	1984-04-04	住友電気工業株式会社	ＣａＡｓ単結晶への硼素のド−ピング方法
US10724148B2 (en)	2014-01-21	2020-07-28	Infineon Technologies Ag	Silicon ingot and method of manufacturing a silicon ingot
US10337117B2 (en)	2014-11-07	2019-07-02	Infineon Technologies Ag	Method of manufacturing a silicon ingot and silicon ingot
CN106222742B (zh) *	2016-09-12	2019-01-29	江西赛维Ldk太阳能高科技有限公司	一种晶体硅及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL107897C (es) *	1953-05-18

0
- BE BE567569D patent/BE567569A/xx unknown
- NL NL229017D patent/NL229017A/xx unknown
- NL NL112556D patent/NL112556C/xx active
1957
- 1957-06-25 US US667956A patent/US2861905A/en not_active Expired - Lifetime
1958
- 1958-05-08 DE DEW23291A patent/DE1215658B/de active Pending
- 1958-06-03 FR FR1208294D patent/FR1208294A/fr not_active Expired
- 1958-06-24 GB GB20207/58A patent/GB871839A/en not_active Expired
- 1958-06-25 CH CH6104158A patent/CH402425A/fr unknown

Also Published As

Publication number	Publication date
GB871839A (en)	1961-07-05
CH402425A (fr)	1965-11-15
US2861905A (en)	1958-11-25
DE1215658B (de)	1966-05-05
NL229017A (es)	1900-01-01
BE567569A (es)	1900-01-01
NL112556C (es)	1900-01-01

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