FR1169113A - Procédé de traitement des dispositifs semi-conducteurs à jonctions - Google Patents
Procédé de traitement des dispositifs semi-conducteurs à jonctionsInfo
- Publication number
- FR1169113A FR1169113A FR1169113DA FR1169113A FR 1169113 A FR1169113 A FR 1169113A FR 1169113D A FR1169113D A FR 1169113DA FR 1169113 A FR1169113 A FR 1169113A
- Authority
- FR
- France
- Prior art keywords
- junctions
- semiconductor devices
- processing semiconductor
- processing
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5906/56A GB861679A (en) | 1956-02-24 | 1956-02-24 | Improvements in or relating to methods for the treatment of semi-conducting materialand semi-conductor junction devices |
US642141A US2902419A (en) | 1956-02-24 | 1957-02-25 | Methods for the treatment of semi-conductor junction devices |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1169113A true FR1169113A (fr) | 1958-12-23 |
Family
ID=26240247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1169113D Expired FR1169113A (fr) | 1956-02-24 | 1957-02-25 | Procédé de traitement des dispositifs semi-conducteurs à jonctions |
Country Status (4)
Country | Link |
---|---|
US (1) | US2902419A (fr) |
DE (1) | DE1111898B (fr) |
FR (1) | FR1169113A (fr) |
GB (1) | GB861679A (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB894255A (en) * | 1957-05-02 | 1962-04-18 | Sarkes Tarzian | Semiconductor devices and method of manufacturing them |
GB829170A (en) * | 1957-06-03 | 1960-02-24 | Sperry Rand Corp | Method of bonding an element of semiconducting material to an electrode |
US3042593A (en) * | 1957-09-23 | 1962-07-03 | Philco Corp | Electrochemical method for cleansing semiconductive devices |
US3075903A (en) * | 1960-02-23 | 1963-01-29 | Motorola Inc | Method of electrolytically etching a semiconductor element |
NL297836A (fr) * | 1962-09-14 | |||
GB1075634A (en) * | 1963-05-29 | 1967-07-12 | Secr Defence | Electrolytic treatment of titanium surfaces |
US3287238A (en) * | 1963-06-07 | 1966-11-22 | Westinghouse Electric Corp | Method of electropolishing tungsten wire |
US4320168A (en) * | 1976-12-16 | 1982-03-16 | Solarex Corporation | Method of forming semicrystalline silicon article and product produced thereby |
US4197141A (en) * | 1978-01-31 | 1980-04-08 | Massachusetts Institute Of Technology | Method for passivating imperfections in semiconductor materials |
US4781853A (en) * | 1986-12-01 | 1988-11-01 | Harris Corp. | Method of enhancing silicon etching capability of alkali hydroxide through the addition of positive valence impurity ions |
US4859280A (en) * | 1986-12-01 | 1989-08-22 | Harris Corporation | Method of etching silicon by enhancing silicon etching capability of alkali hydroxide through the addition of positive valence impurity ions |
TW200411759A (en) * | 2002-09-18 | 2004-07-01 | Memc Electronic Materials | Process for etching silicon wafers |
US7323421B2 (en) * | 2004-06-16 | 2008-01-29 | Memc Electronic Materials, Inc. | Silicon wafer etching process and composition |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE765487C (de) * | 1940-02-02 | 1953-11-02 | Siemens & Halske A G | Einrichtung zur Verdampfung von Stoffen |
DE731102C (de) * | 1941-12-13 | 1943-02-03 | Dr Herbert Brintzinger | Verfahren zur Erzeugung metallischer UEberzuege |
NL74023C (fr) * | 1946-06-27 | |||
US2656496A (en) * | 1951-07-31 | 1953-10-20 | Bell Telephone Labor Inc | Semiconductor translating device |
US2736639A (en) * | 1953-12-16 | 1956-02-28 | Raytheon Mfg Co | Surface treatment of germanium |
US2738259A (en) * | 1954-02-24 | 1956-03-13 | Raytheon Mfg Co | Surface treatment of germanium |
US2739882A (en) * | 1954-02-25 | 1956-03-27 | Raytheon Mfg Co | Surface treatment of germanium |
-
1956
- 1956-02-24 GB GB5906/56A patent/GB861679A/en not_active Expired
-
1957
- 1957-02-23 DE DEP18034A patent/DE1111898B/de active Pending
- 1957-02-25 US US642141A patent/US2902419A/en not_active Expired - Lifetime
- 1957-02-25 FR FR1169113D patent/FR1169113A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1111898B (de) | 1961-07-27 |
GB861679A (en) | 1961-02-22 |
US2902419A (en) | 1959-09-01 |
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