FR1155394A - Jonctions de semi-conducteurs - Google Patents
Jonctions de semi-conducteursInfo
- Publication number
- FR1155394A FR1155394A FR1155394DA FR1155394A FR 1155394 A FR1155394 A FR 1155394A FR 1155394D A FR1155394D A FR 1155394DA FR 1155394 A FR1155394 A FR 1155394A
- Authority
- FR
- France
- Prior art keywords
- semiconductor junctions
- junctions
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB22485/55A GB794128A (en) | 1955-08-04 | 1955-08-04 | Improvements in or relating to methods of forming a junction in a semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1155394A true FR1155394A (fr) | 1958-04-25 |
Family
ID=10180163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1155394D Expired FR1155394A (fr) | 1955-08-04 | 1956-08-04 | Jonctions de semi-conducteurs |
Country Status (4)
Country | Link |
---|---|
US (1) | US2857296A (fr) |
DE (1) | DE1118360B (fr) |
FR (1) | FR1155394A (fr) |
GB (1) | GB794128A (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3162556A (en) * | 1953-01-07 | 1964-12-22 | Hupp Corp | Introduction of disturbance points in a cadmium sulfide transistor |
US2943005A (en) * | 1957-01-17 | 1960-06-28 | Rca Corp | Method of alloying semiconductor material |
US3097976A (en) * | 1959-07-06 | 1963-07-16 | Sprague Electric Co | Semiconductor alloying process |
NL219744A (fr) * | 1957-08-08 | |||
US3036937A (en) * | 1957-12-26 | 1962-05-29 | Sylvania Electric Prod | Method for manufacturing alloyed junction semiconductor devices |
NL131155C (fr) * | 1958-02-22 | |||
US3176376A (en) * | 1958-04-24 | 1965-04-06 | Motorola Inc | Method of making semiconductor device |
US3095622A (en) * | 1958-06-11 | 1963-07-02 | Clevite Corp | Apparatus for manufacture of alloyed semiconductor devices |
US3186046A (en) * | 1959-06-10 | 1965-06-01 | Clevite Corp | Apparatus for the preparation of alloy contacts |
NL243304A (fr) * | 1959-09-12 | 1900-01-01 | ||
US3150013A (en) * | 1960-02-17 | 1964-09-22 | Gen Motors Corp | Means and method for fabricating semiconductor devices |
DE1229991B (de) * | 1960-03-04 | 1966-12-08 | Telefunken Patent | Verfahren und Vorrichtung zur Herstellung von legierten pn-UEbergaengen bei Halbleiteranordnungen |
US3151008A (en) * | 1960-09-23 | 1964-09-29 | Sprague Electric Co | Method of forming a p-nu junction |
NL258203A (fr) * | 1960-11-21 | |||
GB992729A (en) * | 1962-08-22 | 1965-05-19 | Mullard Ltd | Improvements in or relating to methods of alloying material to semiconductor bodies |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE466804A (fr) * | 1941-12-19 | |||
BE471046A (fr) * | 1944-12-14 | |||
US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
US2712621A (en) * | 1949-12-23 | 1955-07-05 | Gen Electric | Germanium pellets and asymmetrically conductive devices produced therefrom |
BE506280A (fr) * | 1950-10-10 | |||
NL91691C (fr) * | 1952-02-07 | |||
NL178757B (nl) * | 1952-06-02 | British Steel Corp | Werkwijze en inrichting voor het continu produceren van een metaalstrook uit metaalpoeder. | |
NL88391C (fr) * | 1952-08-14 | |||
US2765245A (en) * | 1952-08-22 | 1956-10-02 | Gen Electric | Method of making p-n junction semiconductor units |
US2697052A (en) * | 1953-07-24 | 1954-12-14 | Bell Telephone Labor Inc | Fabricating of semiconductor translating devices |
-
1955
- 1955-08-04 GB GB22485/55A patent/GB794128A/en not_active Expired
-
1956
- 1956-08-02 US US601718A patent/US2857296A/en not_active Expired - Lifetime
- 1956-08-02 DE DEG20231A patent/DE1118360B/de active Pending
- 1956-08-04 FR FR1155394D patent/FR1155394A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB794128A (en) | 1958-04-30 |
DE1118360B (de) | 1961-11-30 |
US2857296A (en) | 1958-10-21 |
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